Jump to main content
Honorary Professorship Nanoelectronics Technologies
Publications

Publications

2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003

Year 2007

Books

Gottfried,K.; Schubert,I.; Schulze,K.; Schulz,S.E.; Gessner,T.: Chapter CMP issues arising from novel materials and concepts in the BEOL of advanced Microelectronic Devices. in the book: ICPT - International Conference on Planarization/CMP, ed. by Dr. Zwicker, Gerfried (2007) pp 297-302 (ISBN 9783800730650)

Papers

Ahner,N.; Schulz,S.E.; Blaschta,F.; Rennau,M.: Thermal stability and gap-fill properties of spin-on MSQ low-k dielectrics. Materials for Advanced Metallization - MAM, Brugge (Belgium), 2007 Mar 4-7; Microelectronic Engineering, 84 (2007) pp 2606-2609 (ISSN 0167-9317)
Ecke,R.; Rennau,M.; Zimmermann,S.; Schulz,S.E.; Gessner,T.: Influence of barrier crystallization on CV characteristics of MIS structures. Advanced Metallization Conference 2006 (AMC 2006), San Diego CA (USA), 2006 Oct 17-19; MRS Conf. Proc. AMC XXII, Materials Research Society, Warrendale PA (2007), pp 123-128 (ISBN 1-55899-865-9 / ISSN 1048-0854)
Fruehauf,S.; Gessner,T.; Haase,T.; Jakob,A.; Kohse-Hoeinghaus,K.; Lang,H.; Schulz,S.E.; Waechtler,T.: Novel Copper(I) and Silver(I) Complexes as Precursors for Chemical Vapor Deposition and Spin-Coating of Copper and Silver. Smart Systems Integration 2007, Paris (F), 2007 Mar 27-28; Proceedings, VDE VERLAG GMBH, Berlin und Offenbach (2007), pp 531-533 (ISBN 978-3-8007-3009-4)
Gottfried,K.; Schubert,I.; Schulze,K.; Schulz,S.E.; Gessner,T.: CMP issues arising from novel materials and concepts in the BEOL of advanced Microelectronic Devices. ICPT - International Conference on Planarization/CMP Technology, Dresden (Germany), 2007, Oct 25-27 pp 297-302 (ISBN 9783800730650)
Hofmann,L.; Kuechler,M.; Gumprecht,T.; Ecke,R.; Schulz,S.E.; Gessner,T.: Investigations on via geometry and wetting behavior for the filling of Through Silicon Vias by copper electro depostition (Talk). Advanced Metallization Conference (AMC), Albany (USA), 2007 Oct 09-11
Iacopi,F.; Beyer,G.; Travaly,Y.; Waldfried,C.; Gage,D.M.; Dauskardt,R.H.; Houthoofd,K.; Jacobs,P.; Adriaensens,P.; Schulze,K.; Schulz,S.E.; List,S.; Carlotti,G.: Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure. Acta Materialia, 55(4) (2007) pp 1407-1414
Roth,N.; Jakob,A.; Waechtler,T.; Schulz,S.E.; Gessner,T.; Lang,H.: Phosphane copper(I) complexes as CVD precursors. Surf. Coat. Technol., 201 (22-23) (2007) pp 9089-9094 (ISSN 0257-8972)
Schulz,S.E.; Ahner,N.: Deposition and properties of porous ultra-low-k dielectric films (Invited Talk). 8th Seminar Porous Glasses - Special Glasses, Wroclaw, 2007 Sept 4-8
Schulze,K.; Schulz,S.E.; Gessner,T.: Impact of Dielectric Material and Metal Arrangement on Thermal Behaviour of Interconnect Systems. Advanced Metallization Conference 2006 (AMC 2006), San Diego CA (USA), 2006 Oct 17-19; MRS Conf. Proc. AMC XXII, Materials Research Society, Warrendale PA (2007), pp 445-451 (ISBN 1-55899-865-9 / ISSN 1048-0854)
Schulze,K.; Schulz,S.E.; Gessner,T.: Thermal Behavior of Interconnect Systems: A Comparison of low-k, Airgap and SiO2 Integration (Talk). MicroNanoReliability, Berlin, 2007 Sept 2-5
Schulze,K.; Schulz,S.E.; Gessner,T.: Electrical characterization of Airgap structures: Impact of film thickness and film permittivity on effective dielectric constant (Talk). European Congress on Advanced Materials and Processes EUROMAT, Nuernberg, 2007 Sept 10-13
Schulze,K.; Schulz,S.E.; Gessner,T.: Evaluation of Air Gap structures produced by wet etch of sacrificial dielectrics: Impact of wet etch media on diffusion barriers, copper, and the Cu/SiC:H interface (Poster). Advanced Metallization Conference (AMC), Albany (USA), 2007 Oct 09-11
Schulze,K.; Schulz,S.E.; Gessner,T.: Evaluation of Air Gap structures produced by wet etch of sacrificial dielectrics: Critical processes and reliability of Air Gap formation. Materials for Advanced Metallization (MAM), Brugge (Belgium), 2007 Mar 4-7; Microelectronic Engineering, 84/11 (2007) pp 2587-2594
Waechtler,T.; Jakob,A.; Roth,N.; Oswald,S.; Schulz,S.E.; Lang,H.; Gessner,T.: Copper thin films grown via ALD of copper oxide. European Congress on Advanced Materials and Processes - EUROMAT, Nuremberg (Germany), 2007 Sep 10-13
Waechtler,T.; Oswald,S.; Pohlers,A.; Schulze,S.; Schulz,S.E.; Gessner,T.: Copper and copper oxide composite films deposited by ALD on tantalum-based diffusion barriers (Poster). Advanced Metallization Conference (AMC), Albany (USA), 2007 Oct 09-11
Waechtler,T.; Roth,N.; Oswald,S.; Schulz,S.E.; Lang,H.; Gessner,T.: Composite films of copper and copper oxide deposited by ALD . AVS 7th International Conference on Atomic Layer Deposition - ALD 2007, San Diego, California (USA), 2007 Jun 24-27
Waechtler,T.; Schulz,S.E.; Oswald,S.; Gessner,T.: Atomic Layer Deposition of Copper and Copper Oxide for Applications in Microelectronic Metallization Systems. NanoScience 2007 - 5th Leibniz Conference of Advanced Science, Lichtenwalde (Germany), 2007 Oct 18-20; Micromaterials and Nanomaterials, Iss. 07/2007 (2007) pp 26-27 (ISSN 1619-2486)
Wieland,R.; Ecke,R.; Klumpp,A.; Merkel,R.; Schulz,S.E.; Ramm,P.: 3D-integrated Si- and SiGe CMOS-devices by ICV-SLID technology. Smart Systems Integration 2007, Paris (F), Mar 27-28; Proceedings, VDE VERLAG GMBH, Berlin und Offenbach (2007), pp 649-651 (ISBN 978-3-8007-3009-4)