| Bonitz,J.; Schulz,S.E.; Gessner,T.: CVD TiN layers as diffusion barrier films on porous SiO2 aerogel. Microelectronic Eng., 70 (2003) pp 330-336 |
| Delan,A.; Rennau,M.; Schulz,S.E.; Gessner,T.: Thermal Conductivity of ultra low-k dielectrics. MAM, La Londe Les Maures (France), 2003 Mar 9-12; Microelectronic Eng., 70 (2003) pp 280-284 |
| Ecke,R.; Hecker,M.; Schulz,S.E.; Engelmann,H.-J.; Gessner,T.; Mattern,N.; Zschech,E.: Properties of as-deposited and annealed PECVD Tungsten Nitride films. European Congress on Advanced Materials and Processes EUROMAT 2003, Lusanne (Switzerland), 2003 Sept. 1-5 |
| Ecke,R.; Schulz,S.E.; Gessner,T.; Riedel,S.; Lipp,E.; Eizenberg,M.: Deposition and treatment of titanium based barrier layers by MOCVD. Proc. Chemical Vapor Deposition XVI and EUROCVD 14, 2003-08 (2003) pp 1224-1230 |
| Ecke,R.; Schulz,S.E.; Hecker,M.; Mattern,N.; Gessner,T.: Influence of SiH4 on the WNx-PECVD process. MAM, La Londe Les Maures (France), 2003 Mar 9-12; Microelectronic Eng., 70 (2003) pp 346-351 |
| Emelianov,V.; Ganesan,G.; Puzic,A.; Schulz,S.E.; Eizenberg,M.; Habermeier,H.U.; Stoll,H.: Investigation of Electromigration in Copper Interconnects by Noise Measurements. SPIE Fluctuations and Noise, Santa Fe, New Mexico (USA), 2003 Jun 1–4; Proceedings SPIE, 5112 (2003) pp 271-281 |
| Fruehauf,S.; Streiter,I.; Puschmann,R.; Schulz,S.E.; Himcinschi,C.; Flannery,C.M.; Gessner,T.; Zahn,D.R.T.: Modified silica aerogel as a low-k dielectric with improved
mechanical properties. ULSI XVIII, 2003; Proceedings, pp 507-512 |
| Fruehauf,S.; Streiter,I.; Rennau,M.; Puschmann,R.; Schulz,S.E.; Gessner,T.; Chudoba,T.; Richter,F.,Flannery,C.; Matusche,J.; Schmidt.U.: Electrical and Mechanical characterization of porous silicon dioxide as an ultra low k dielectric. Proceedings of Materialsweek, Munich (Germany), 2003 Sept. 30th- Oct. 2nd |
| Hecker,M.; Huebner,R.; Mattern,N.; Voss,A.; Acker,J.; Ecke,R.; Schulz,S.E.; Gessner,T.; Wenzel,C.; Bartha,J.; Engelmann,H.-J.; Zschech,E.: Effect of thermal
stressing on the microstructure of tungsten and tantalum based diffusion barrier layers. European Congress on Advanced Materials and Processes EUROMAT 2003, Lausanne (Switzerland), 2003 Sept. 1-5 |
| Himcinschi,C.; Friedrich,M.; Fruehauf,S.; Schulz,S.E.; Gessner,T.; Zahn,D.R.T.: Contributions to static dielectric constants of low-k xerogels films derived from VASE and IR spectroscopies. International Conference on Spectroscopic Ellipsometry, Vienna (Austria), 2003 July 6 - 11 |
| Lang,H.; Leschke,M.; Melter,M.; Walfort,B.; Koehler,K.; Schulz,S.E.; Gessner,T.: Ein- und zweikernige Kupfer(I)- und Silber(I)-Phosphan-Komplexe mit b-Diketonato-Teilstrukturen
. Z. anorg. allg. Chemie, 629 (2003) p 2371 – 2380 |
| Schulz,S.E.; Aubel,O.; Baumann,J.; Hasse,W.; Gessner,T.: Copper Alloys for
Improved Interconnect Properties. (Advanced Metallization Conference), Montreal (Canada), 2003 Oct 21-23 |
| Schulz,S.E.; Blaschta,F.; Eisener,B.; Fruehauf,S.; Schulze,K.; Seidel,U.; Koerner,H.; Gessner,T.: SiO2-Aerogel ULK Integration into Copper Damascene Interconnects for RF Devices. AMC (Advanced Metallization Conference), Montreal (Canada), 2003 Oct 21-23 |
| Schulz,S.E.; Schulze,K.; Matusche,J.; Schmidt,U.; Gessner,T.: Effect of PECVD SiC
and SiCN cap layer deposition on mesoporous silica ultra low k dielectric films. 14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing
Conference and Workshop, Munich (Germany), 2003 Mar 31- April 1 |
| Uhlig,M.; Bertz,A.; Erben,J.-W.; Schulz,S.E.; Gessner,T.; Zeidler,D.; Wenzel,C.; Bartha,J.: Experimental results on the integration of copper and CVD ultra low k
material. MAM 2003, La Londe Les Maures (France), 2003 Mar 9-12; Proceedings,
Microelectronic Eng., 70 (2003) pp 314-319 |
| Zimmermann,S.; Ecke,R.; Rennau,M.; Schulz,S.E.; Hecker,M.; Voss,A.; Engelmann,H.-J.; Acker,J.; Mattern,N.; Zschech,E.; Gessner,T.: Characterisation of a PECVD WNx Barrier Layer Against Copper Diffusion. AMC (Advanced Metallization Conference), Montreal (Canada), 2003 Oct 21-23 |
