Publications
2024
201. Transfer doping of epitaxial graphene on SiC(0001) using Cs
F. Göhler, P. Schädlich, N. Rösch, M. Zeißig, T. Seyller, 2D Mater. 11 (2024) 025016.
200. Quasi-Freestanding Graphene via Sulfur Intercalation: Evidence for a Transition State
S. Wolff, N. Tilgner, F. Speck, P. Schädlich, F. Göhler, T. Seyller, Adv. Mater. Interfaces 11 (2024) 2300725. Editors Choice!
2023
199. Determination of the spacing between hydrogen-intercalated quasifreestanding monolayer graphene and 6H-SiC(0001) using total-reflection high-energy positron diffraction
M. Dodenhöft, I. Mochizuki, K. Wada, T. Hyodo, P. Richter, P. Schädlich, T. Seyller, C. Hugenschmidt, Phys. Rev. B 108 (2023) 15543.
198. Expanding the Composition Range of Transition Metal Dichalcogenide Alloys, Fex(FeyV1–ySe2)
M. Lemon, L. Pu, F. Göhler, T. Seyller, D. C. Johnson, Chem. Mater. 35 (2023) 9423.
197. Simple extension of the plane-wave final state in photoemission: Bringing understanding to the photon-energy dependence of two-dimensional materials
C. S. Kern, A. Haags, L. Egger, X. Yang, H. Kirschner, S. Wolff, T. Seyller, A. Gottwald, M. Richter, U. De Giovannini, A. Rubio, M. G. Ramsey, F. C. Bocquet, S. Soubatch, F. S. Tautz, P. Puschnig, S. Moser, Phys. Rev. Research 5 (2023) 033075.
196. Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge-Neutral Epitaxial Graphene
P. Schädlich, C. Ghosal, M. Stettner, B. Matta, S. Wolff, F. Schölzel, P. Richter, M. Hutter, A. Haags, S. Wenzel, Z. Mamiyev, J. Koch, S. Soubatch, P. Rosenzweig, C. Polley, F. S. Tautz, C. Kumpf, K. Küster, U. Starke, T. Seyller, F. C. Bocquet, C. Tegenkamp, Adv. Mater. Interfaces 10 (2023) 23000471.
195. Fabrication of Single-Crystalline CoCrFeNi Thin Films by DC Magnetron Sputtering: A Route to Surface Studies of High-Entropy Alloys
H. Schwarz, J. Apell, H. K. Wong, P. Henning, R. Wonneberger, N. Rösch, T. Uhlig, F. Ospald, G. Wagner, A. Undisz, T. Seyller, Adv. Mater. 35 (2023) 2301526.
194. magnetoARPES: Angle Resolved Photoemission Spectroscopy with magnetic field control
S. H. Ryu, G. Reichenbach, C. M. Jozwiak, A. Bostwick, P. Richter, T. Seyller, E. Rotenberg, J. Electron. Spectrosc. 266 (2023) 147357.
193. Dielectric function of epitaxial quasi-freestanding monolayer graphene on Si-face 6H-SiC in a broad spectral range
K. K. Tikuišis, A. Dubroka, K. Uhlířová, F. Speck, T. Seyller, M. Losurdo, M. Orlita, M. Veis, Phys. Rev. Materials 7 (2023) 044201.
192. Microstructure Evolution and Wear Resistance of the Eutectic High-Entropy Alloy Al0.3CoCrFeNiNb0.5 Produced by Laser Metal Deposition
B. Preuß, T. Lindner, T. Uhlig, J. E. T. Cabrera, H. Schwarz, G. Wagner, T. Seyller, T. Lampke, Coatings 13 (2023) 585.
191. Non-Metallic Alloying Constituents to Develop a Wear-Resistant CrFeNi-BSiC High-Entropy Alloy for Surface Protective Coatings by Thermal Spraying and High-Speed Laser Metal Deposition
T. Lindner, B. Preuß, M. Löbel, L.-M. Rymer, M. Grimm, H. Schwarz, T. Seyller, T. Lampke, Coatings 13 (2023) 291.
2022
190. Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
Y.-R. Lin, S. Wolff, P. Schädlich, M. Hutter, S. Soubatch, T.-L. Lee, F. S. Tautz, T. Seyller, C. Kumpf, F. C Bocquet, Phys. Rev. B 106 (2022) 155418.
189. Cleaning of LTCC, PEN, and PCB Au electrodes towards reliable electrochemical measurements
M. H. Fakhr, N. Beshchasna, S. Balakin, I. L. Carrasco, A. Heitbrink, F. Göhler, N. Rösch, J. Opitz, Sci. Rep. 12 (2022) 20431.
188. Modulation Doping and Charge Density Wave Transition in Layered PbSe-VSe2 Ferecrystal Heterostructures
F. Göhler, S. Ramasubramanian, S. K. Rajak, N. Rösch, A. Schütze, S. Wolff, D. L. M. Cordova, D. C. Johnson, Th. Seyller, Nanoscale 14 (2022) 10143.
187. Pump-induced terahertz anisotropy in bilayer graphene
A. Seidl, R. Anvari, M.M. Dignam, P. Richter, T. Seyller, H. Schneider, M. Helm, S. Winnerl, Phys. Rev. B 105 (2022) 085404.
186. Hardness Enhancement in CoCrFeNi1-x(WC)x High-Entropy Alloy Thin Films Synthesised by Magnetron Co-Sputtering
H. Schwarz, T. Uhlig, T. Lindner, T. Lampke, G. Wagner, T. Seyller, Coatings 12 (2022) 269.
2021
185. Surface Transport Properties of Pb-Intercalated Graphene
M. Gruschwitz, C. Ghosal, T.-H. Shen, S. Wolff, T. Seyller, C. Tegenkamp, Materials 14 (2021) 7706.
184. Ultrafast electronic linewidth broadening in the C 1s core level of graphene
D. Curcio, et al., Phys. Rev. B 104 (2021) L161104.
183. Synthesis and Electrical Properties of a New Compound (BiSe)0.97(Bi2Se3)1.26(BiSe)0.97(MoSe2) Containing Metallic 1T-MoSe2
M. A. Choffel, R. N. Gannon, F. Göhler, A. M. Miller, D. L. Medlin, Th. Seyller, D. C. Johnson, Chem. Mater. 33 (2021) 6403.
182. Challenging the Durability of Intermetallic Mo−Ni Compounds in the Hydrogen Evolution Reaction
L. Rößner, H. Schwarz, I. Veremchuk, R. Zerdoumi, T. Seyller, M. Armbrüster, ACS Applied Materials & Interfaces 13 (2021) 23616.
181. Influence of Nanoarchitectures on Interlayer Interactions in Layered Bi-Mo-Se Heterostructures
F. Göhler, M. A. Choffel, C. Schmidt, D. R. T. Zahn, D. C. Johnson, Th. Seyller, J. Phys. Chem. C 125 (2021) 9469.
180. CoCrFeNi High-Entropy Alloy Thin Films Synthesised by Magnetron Sputter Deposition from Spark Plasma Sintered Targets
H. Schwarz, T. Uhlig, N. Rösch, T. Lindner, F. Gans, O. Hellwig, T. Lampke, G. Wagner, T. Seyller, Coatings 11 (2021) 468.
179. Stacking Relations and Substrate Interaction of Graphene on Copper Foil
P. Schädlich, F. Speck, C. Bouhafs, N. Mishra, S. Forti, C. Coletti, Th. Seyller, Advanced Materials Interfaces 8 (2021) 2002025.
178. Electronic band structure of Bi-intercalate layers in graphene and SiC(0001)
Y. Sohn, S. W. Jung, F. Göhler, W. J. Shin, S. Cha, Th. Seyller, K. S. Kim, J. Korean Phys. Soc. 78 (2021) 157.
2020
177. Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene
D. M. Pakdehi, P. Schädlich, T. T. N. Nguyen, A. A. Zakharov, S. Wundrack, E. Najafidehaghani, F. Speck, K. Pierz, Th. Seyller, C. Tegenkamp, H. W. Schumacher, Advanced Functional Materials (2020) 2004695.
176. Annealing effects on a-SiC:H and a-SiCN:H films deposited by plasma CVD methods
S. Peter, R. Ehrler, Th. Seyller, F. Speck, Vacuum 178 (2020) 109410.
175. Production and processing of graphene and related materials
C. Backes, et al., 2D Materials 7, 022001 (2020).
174. Substrate induced nanoscale resistance variation in epitaxial graphene
A. Sinterhauf, G. A. Traeger, D. Momeni Pakdehi, P. Schädlich, P. Willke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth, Nat. Commun. 11, 555 (2020).
173. From a Cerium-Doped Polynuclear Bismuth Oxido Cluster to β-Bi2O3:Ce
M. Weber, T. Rüffer, F. Speck, F. Göhler, D. P. Weimann, C. A. Schalley, Th. Seyller, H. Lang, M. Mehring, Inorg. Chem. (2020) article in press.
2019
172. Quasi‐Freestanding Graphene on SiC(0001) by Ar‐Mediated Intercalation of Antimony: A Route Toward Intercalation of High‐Vapor‐Pressure Elements
S. Wolff, S. Roscher, F. Timmermann, M.V. Daniel, F. Speck, M. Wanke, M. Albrecht, T.. Seyller, Ann. Phys. 531 (2019) 1900199.
171. Synthesis and Properties of (BiSe)0.97MoSe2: A Heterostructure Containing Both 2H-MoSe2 and 1T-MoSe2
E. C. Hadland, F. Göhler, G. Mitchson, S. S. Fender, C. Schmidt, D. R. T. Zahn, Th. Seyller, D. C. Johnson, Chem. Mater. 31 (2019) 5824.
170. Electronic structure of designed [SnSe1+δ]m[TiSe2]2 heterostructure thin films with tunable layering sequence
F. Göhler, D. M. Hamann, N. Rösch, S. Wolff, J. T. Logan, R. Fischer, F. Speck, D. C. Johnson, Th. Seyller, J. Mater. Res. 34 (2019) 1965
169. Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy
S. Wundrack, D. Momeni Pakdehi, P. Schädlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch, Phys. Rev. B 99 (2019) 045443
2018
168. Extremely flat band in bilayer graphene
D. Marchenko, D. V. Evtushinsky, E. Golias, A. Varykhalov, Th. Seyller, O. Rader, Science Advances 4 (2018) eaau0059.
167. Activation of the Highly-Selective Pd11Bi2Se2 during the Semi-Hydrogenation of Acetylene
I. G. Aviziotis, A. Götze, F. Göhler, H. Kohlmann, M. Armbrüster, Z. Anorg. Allg. Chem. 644 (2018) 1777.
166. Growth of Nanocrystalline MoSe2-Monolayers on Epitaxial Graphene from Amorphous Precursors
F.Goehler, E. C. Hadland, C. Schmidt, D. R. T. Zahn, F. Speck, D. C. Johnson, Th. Seyller, Phys. Stat. Sol. B Article in press.
165. ECR plasma deposited a-SiCN:H as insulating layer in piezoceramic modules
S. Peter, Y. Vasin, F. Speck, M. Schmidt, V. Wittstock, Th. Seyller, Vacuum 155 (2018), 188.
164. Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure
X. Fan, S. Wagner, P. Schädlich, F. Speck, S. Kataria, T. Haraldsson, Th. Seyller, M. C. Lemme, F. Niklaus, Sci. Adv. 4 (2018), eaar5170.
163. Charge transfer in (PbSe)1+δ(NbSe2)2 and (SnSe)1+δ(NbSe2)2 ferecrystals investigated by photoelectron spectroscopy
F. Göhler, G. Mitchson, M. B. Alemayehu, F. Speck, M. Wanke, D. C. Johnson, Th. Seyller, J. Phys.: Condens. Matter 30 (2018), 055001.
2017
162. Science and Technology of Graphene
T. Seyller, Ann. Phys. 529 (2017) 1700322.
161. Single Crystalline Metal Films as Substrates for Graphene Growth
P. Zeller, M. Weinl, F. Speck, M. Ostler, A. Henß, Th. Seyller, M. Schreck, J. Wintterlin, Ann. Phys. 529 (2017) 1700023.
160. Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy
F. Speck, M. Ostler, S. Besendörfer, J. Krone, M. Wanke, Th. Seyller, Ann. Phys. 529 (2017) 1700046.
159. Analysis of a-SiCN:H films by X-ray photoelectron spectroscopy
S. Peter, F. Speck, M. Linder, T. Seyller, Vacuum 138 (2017) 191.
158. Work function of graphene multilayers on SiC(0001)
S. Mammadov, J. Ristein, J. Krone, C. Raidel, M. Wanke, V. Wiesmann, F. Speck, Th. Seyller, 2D Mater. 4 (2017) 015043.
2016
157. Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe)1+δ(NbSe2)n (n = 1–4) Heterostructures
G. Mitchson, E. Hadland, F. Göhler, M. Wanke, M. Esters, J. Ditto, E. Bigwood, K. Ta, R. G. Hennig, Th. Seyller, D. C. Johnson, ACS Nano, 2016, 10 (10), 9489.
156. Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
M. Kruskopf, D.M. Pakdehi, K. Pierz, S. Wundrack, R. Stosch, Thorsten Dziomba, M. Götz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, Thomas Seyller, F. Hohls, F.J. Ahlers, H.W. Schumacher, 2D Mater. 3 (2016) 41002.
155. Manifestation of nonlocal electron-electron interaction in graphene
S. Ulstrup, M. Schüler, M. Bianchi, F. Fromm, C. Raidel, T. Seyller, T. Wehling, P. Hofmann, Phys. Rev. B. 94 (2016) 81403.
154. Rashba splitting of 100 meV in Au-intercalated graphene on SiC
D. Marchenko, A. Varykhalov, J. Sánchez-Barriga, T. Seyller, O. Rader, Appl. Phys. Lett. 108 (2016) 172405.
153. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy
J.M. Wofford, F. Speck, T. Seyller, J.M.J. Lopes, and H. Riechert, J. Appl. Phys. 120 (2016) 45309.
152. Porous Ge@C materials via Twin polymerization of germanium(II) salicyl alcoholates for Li-ion batteries
P. Kitschke, M. Walter, T. Rüffer, A. Seifert, F. Speck, T. Seyller, S. Spange, H. Lang, A.A. Auer, M.V. Kovalenko, M. Mehring, J. Mater. Chem. A 4 (2016) 2705.
151. Terahertz ratchet effects in graphene with a lateral superlattice
P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, M.-H. Liu, L.E. Golub, E.L. Ivchenko, V.V. Popov, D.V. Fateev, K.V. Mashinsky, F. Fromm, T. Seyller, S.D. Ganichev, Phys. Rev. B 93 (2016) 075422.
150. Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide
R.J. Koch, S. Fryska, M. Ostler, M. Endlich, F. Speck, T. Hänsel, J.A. Schaefer, T. Seyller, Phys. Rev. Lett. 116 (2016) 106802.
2015
150. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
A.C. Ferrari, F. Bonaccorso, V. Fal’ko, K.S. Novoselov, S. Roche, P. Bøggild, S. Borini, F.H.L. Koppens, V. Palermo, N. Pugno, J.A. Garrido, R. Sordan, A. Bianco, L. Ballerini, M. Prato, E. Lidorikis, J. Kivioja, C. Marinelli, T. Ryhänen, A. Morpurgo, J.N. Coleman, V. Nicolosi, L. Colombo, A. Fert, M. Garcia-Hernandez, A. Bachtold, G.F. Schneider, F. Guinea, C. Dekker, M. Barbone, Z. Sun, C. Galiotis, A.N. Grigorenko, G. Konstantatos, A. Kis, M. Katsnelson, L. Vandersypen, A. Loiseau, V. Morandi, D. Neumaier, E. Treossi, V. Pellegrini, M. Polini, A. Tredicucci, G.M. Williams, B.H. Hong, J.-H. Ahn, J.M. Kim, H. Zirath, B.J. van Wees, H. van der Zant, L. Occhipinti, A.D. Matteo, I.A. Kinloch, T. Seyller, E. Quesnel, X. Feng, K. Teo, N. Rupesinghe, P. Hakonen, S.R.T. Neil, Q. Tannock, T. Löfwander, and J. Kinaret, Nanoscale 7 (2015) 4598.
149. Tunable Carrier Multiplication and Cooling in Graphene
J.C. Johannsen, S. Ulstrup, A. Crepaldi, F. Cilento, M. Zacchigna, J.A. Miwa, C. Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P.D.C. King, F. Parmigiani, M. Grioni, and P. Hofmann, Nano Lett. 15 (2015) 326.
148. Ramifications of optical pumping on the interpretation of time-resolved photoemission experiments on graphene
S. Ulstrup, J.C. Johannsen, F. Cilento, A. Crepaldi, J.A. Miwa, M. Zacchigna, C. Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P.D.C. King, F. Parmigiani, M. Grioni, and P. Hofmann, J. Electron Spectrosc. 200 (2015) 340.
147. Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy
S. Ulstrup, J.C. Johannsen, A. Crepaldi, F. Cilento, M. Zacchigna, Cephise Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, Fulvio Parmigiani, M. Grioni, and P. Hofmann, J. Phys.: Condens. Matter 27 (2015) 164206.
146. Atomic structure of Bi2Se3 and Bi2Te3 (111) surfaces probed by photoelectron diffraction and holography
M. V. Kuznetsov, L. V. Yashina, J. Sánchez-Barriga, I. I. Ogorodnikov, A. S. Vorokh, A. A. Volykhov, R. J. Koch, V. S. Neudachina, M. E. Tamm, A. P. Sirotina, A. Yu. Varykhalov, G. Springholz, G. Bauer, J. D. Riley, O. Rader, Phys. Rev. B, 91 (2015) 085402.
2014
145. Surface-Induced Hybridization between Graphene and Titanium
A. L. Hsu, R. J. Koch, M. T. Ong, W. Fang, M. Hofmann, K. K. Kim, Th. Seyller, M. S. Dresselhaus, E. J. Reed, J. Kong, T. Palacios, ACS Nano, 2014, 8 (8) 7704.
144. Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets
A. L. Walter, H. Sahin, K. Jeon, A. Bostwick, S. Horzum, R. Koch, F. Speck, M. Ostler, P. Nagel, M. Merz, S. Schupler, L. Moreschini, Y. J. Chang, Th. Seyller, F. M. Peeters, K. Horn, E. Rotenberg, ACS Nano 2014 8 (8) 7801.
143. Ultrafast dynamics of massive dirac fermions in bilayer graphene
S. Ulstrup, J. C. Johannsen, F. Cilento, J. A. Miwa, A. Crepaldi, M. Zacchigna, C. Cacho, R. Chapman, E. Springate, S. Mammadov, F. Fromm, C. Raidel, Th. Seyller, F. Parmigiani, M. Grioni, P. D. C. King, Ph. Hofmann, Phys. Rev. Lett. 112 (2014) 257401.
142. Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
P. Wehrfritz, F. Fromm, S. Malzer, Th. Seyller, J. Phys. D: Appl. Phys. 47 (2014) 305103.
141. Experimental analysis of the thermal annealing of hard a-C:H films
S. Peter, M. Günther, O. Gordan, S. Berg, D.R.T. Zahn, Th. Seyller , Diamond and Related Materials 45 (2014), 43-57.
140. Development and character of gap states on alkali doping of molecular films
E. M. Reinisch, T. Ules, P. Puschnig, S. Berkebile, M. Ostler, Th. Seyller, M. G. Ramsey, G. Koller, New J. Phys. 16 (2014) 023011.
139. Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor
M. Ostler, F. Fromm, R. J. Koch, P. Wehrfritz, F. Speck, H. Vita, S. Böttcher, K. Horn, Th. Seyller, Carbon 70 (2014), 258.
138. The Hall coefficient: a tool for characterizing graphene field effect transistors
P. Wehrfritz and Th. Seyller, 2D Mater. 1 (2014) 035004.
137. Polarization doping of graphene on silicon carbide
S. Mammadov, J. Ristein, R.J. Koch, M. Ostler, C. Raidel, M. Wanke, R. Vasiliauskas, R. Yakimova, and Th. Seyller, 2D Mater. 1 (2014) 035003.
136. Healing of graphene on single crystalline Ni(111) films
P. Zeller, F. Speck, M. Weinl, M. Ostler, M. Schreck, Th. Seyller, and J. Wintterlin, Applied Physics Letters 105 (2014) 191612.
135. Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
F. Fromm, M. Hundhausen, M. Kaiser, and Th. Seyller, Materials Science Forum 778-780 (2014) 1166.
2013
134. A universal transfer route for graphene
S. Gorantla, A. Bachmatiuk, J. Hwang, H.A. Alsalman, J.Y. Kwak, Th. Seyller, J. Eckert, M.G. Spencer, and M.H. Rümmeli, Nanoscale 6 (2013) 889.
133. Strong Plasmon Reflection at Nanometer-Size Gaps in Monolayer Graphene on SiC
J. Chen, M. L. Nesterov, A. Y. Nikitin, S. Thongrattanasiri, P. Alonso-González, T. M. Slipchenko, F. Speck, M. Ostler, Th. Seyller, I. Crassee, F. H. L. Koppens, L. Martin-Moreno, F. J. García de Abajo, A. B. Kuzmenko, R. Hillenbrand, Nano Lett. 13 (2013) 6210.
132. Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy
T. Schumann, M. Dubslaff, M. H. Oliveira Jr., M. Hanke, F. Fromm, Th. Seyller, L. Nemec, V. Blum, M. Scheffler, J. M. J. Lopes, H. Riechert, New J. Phys. 15 (2013) 123034.
131. Observation of 4 nm Pitch Stripe Domains Formed by Exposing Graphene to Ambient Air
D. S. Wastl, F. Speck, E. Wutscher, M. Ostler, Th. Seyller, F. J. Giessibl, ACS Nano 7 (2013) 10032.
130. Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate
F. Fromm, P. Wehrfritz, M. Hundhausen, Th. Seyller, New J. Phys. 15 (2013) 113006.
129. Fabry-Perot enhanced Faraday rotation in graphene
N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, Th. Seyller, A. B. Kuzmenko, Opt. Express 21 (2013) 24736.
128. Spin-resolved photoemission and ab initio theory of graphene/SiC
D. Marchenko, A. Varykhalov, M. R. Scholz, J. Sánchez-Barriga, O. Rader, A. Rybkina, A. M. Shikin, Th. Seyller, G. Bihlmayer, Phys. Rev. B. 88 (2013) 075422.
127. Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene
K. S. Kim, A. L. Walter, L. Moreschini, Th. Seyller, K. Horn, E. Rotenberg, A. Bostwick, Nature Materials 12 (2013).
126. Direct View of Hot Carrier Dynamics in Graphene
J. C. Johannsen, Søren Ulstrup, Federico Cilento, Alberto Crepaldi, Michele Zacchigna, Cephise Cacho, I. C. Edmond Turcu, Emma Springate, Felix Fromm, Christian Raidel, Th. Seyller, Fulvio Parmigiani, Marco Grioni, P. Hofmann, Phys. Rev. Lett. 111 (2013) 027403.
125. Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surface
M. Ostler, I. Deretzis, S. Mammadov, F. Giannazzo, G. Nicotra, C. Spinella, Th. Seyller, A. La Magna, Phys. Rev. B 88 (2013) 085408.
124. Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48
A. Tadich, M. T. Edmonds, L. Ley, F. Fromm, Y. Smets, Z. Mazej, J. Riley, C. I. Pakes, Th. Seyller, M. Wanke, Appl. Phys. Lett. 102 (2013) 241601.
123. Robust Graphene Membranes in a Silicon Carbide Frame
D. Waldmann, B. Butz, S. Bauer, J. M. Englert, J. Jobst, K Ullmann, F. Fromm, M. Ammon, M. Enzelberger, A. Hirsch, S. Maier, P. Schmuki, Th. Seyller, E. Spiecker, H. B. Weber, ACS Nano 7 (2013) 4441.
122. Growth and electronic structure of boron-doped graphene
J. Gebhardt, R. J. Koch, W. Zhao, O. Höfert, K. Gotterbarm, S. Mammadov, C. Papp, A. Görling, H.-P. Steinrück, Th. Seyller, Phys. Rev. B. 87 (2013) 155437.
121. Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
F. Fromm, M. H. Oliveira Jr., A. Molina-Sánchez, M. Hundhausen, J. M. J. Lopes, H. Riechert, L. Wirtz, T. Seyller, New J. Phys. 15 (2013) 043031.
120. Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy
M. H. Oliveira Jr., T. Schumann, R. Gargallo-Caballero, F. Fromm, T. Seyller, M. Ramsteiner, A. Trampert, L. Geelhaar, J. M. J. Lopes, H. Riechert, Carbon 56 (2013) 339.
119. Friction and atomic-layer-scale wear of graphitic lubricants on SiC(0001) in dry sliding
F. Wählisch, J. Hoth, C. Held, Th. Seyller, R. Bennewitz, Wear 300 (2013) 78.
118. Electron–phonon coupling in quasi-free-standing graphene
J.C. Johannsen, S. Ulstrup, M. Bianchi, R. Hatch, D. Guan, F. Mazzola, L. Hornekær, F. Fromm, C. Raidel, T. Seyller, P. Hofmann, J. Phys.: Condens. Matter 25 (2013) 094001.
117. Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
B. Birkner, D. Pachniowski, A. Sandner, M. Ostler, T. Seyller, J. Fabian, M. Ciorga, D. Weiss, J. Eroms, Phys. Rev. B (2013) 981405(R).
116. Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
A.L. Walter, A. Bostwick, F. Speck, M. Ostler, K.S. Kim, Y.J. Chang, L. Moreschini, D. Innocenti, Th. Seyller, K. Horn, E. Rotenberg, New J. Phys. 15 (2013) 023019.
115. Localized States Influence Spin Transport in Epitaxial Graphene
T. Maassen, J.J. van den Berg, E.H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, B.J. van Wees, Phys. Rev. Lett. 102 (2013) 067209.
114. Formation of high-quality quasi-free standing bilayer graphene by oxygen intercalation upon annealing in air
M. H. Oliveira Jr., T. Schumann, F. Fromm, R. Koch, M. Ostler, M. Ramsteiner, T. Seyller, J. M. J. Lopes, H. Riechert, Carbon 52 (2013) 83.
113. Detecting the local transport properties of epitaxial graphene by a multiprobe approach
L. Barreto, E. Perkins, J. Johannsen, S. Ulstrup, F. Fromm, C. Raidel, Th. Seyller, P. Hofmann, Appl Phys. Lett. 102 (2013) 033110.
112. Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
K.S. Kim, T.-H. Kim, A.L. Walter, Th. Seyller, H.W. Yeom, E. Rotenberg, A. Bostwick, Phys. Rev. Lett. 110 (2013) 036804.
111. On the Way to Graphane - Pronounced Fluorescence of Polyhydrogenated Graphene
R.A. Schäfer, J.M. Englert, P. Wehrfritz, W. Bauer, F. Hauke, Th. Seyller, A. Hirsch, Angew. Chemie. Internat. Ed. 52 (2013) 754.
2012
110. Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions
C. Bock, S. Weingart, E. Karaissaridis, U. Kunze, F. Speck, Th. Seyller, Nanotechnology 23 (2012) 395203.
109. Classical to quantum crossover of the cyclotron resonance in graphene: a study of the strength of intraband absorption
M. Orlita, I. Crassee, C. Faugeras, A. B. Kuzmenko, F. Fromm, M. Ostler, Th. Seyller, G. Martinez, M Polini, M. Potemski, New J. Phys. 14 (2012) 095008.
108. Growth and electronic structure of nitrogen-doped graphene on Ni(111)
R.J. Koch, M. Weser, W. Zhao, F. Vines, K. Gotterbarm, S.M. Kozlov, O. Höfert, M. Ostler, C. Papp, J. Gebhardt, H.-P. Steinrück, A. Gorling, Th. Seyller, Phys. Rev. B 86 (2012) 075401.
107. Precise control of epitaxy of graphene by microfabricating SiC substrate
H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M. Suemitsu, Appl. Phys. Lett. 101 (2012) 041605.
106. Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
J. Ristein, S. Mammadov, Th. Seyller, Phys. Rev. Lett. 108 (2012) 246104.
105. Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene
I. Crassee, M. Orlita, M. Potemski, A.L. Walter, M. Ostler, T. Seyller, I. Gaponenko, J. Chen, A.B. Kuzmenko.
Nano Lett. 12 (2012) 2470.
104. Implanted bottom gate for epitaxial graphene on silicon carbide
D. Waldmann, J. Jobst, F. Fromm, F. Speck, T. Seyller, M. Krieger, H.B. Weber, J. Phys. D - Appl. Phys. 45 (2012) 154006.
103. Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
T. Maassen, J. J. van den Berg, N. Ijbema, F. Fromm, Th. Seyller, R. Yakimova, B. J. van Wees, Nano Letters 12 (2012) 1498.
102. Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
C. Held, Th. Seyller, R. Bennewitz, Beilstein Journal of Nanotechnology 3 (2012) 179.
2011
101. Terahertz radiation driven chiral edge currents in graphene
J. Karch, C. Drexler, P. Ulbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S.A. Tarasenko, E.L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S.D. Ganichev, Phys. Rev. Lett. 107 (2011) 276601.
100. The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H.B. Weber, Th. Seyller, Appl. Phys. Lett. 99 (2011) 122106.
99. Effective screening and the plasmaron bands in graphene
A.L. Walter, A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y.J. Chang, M. Pulini, R. Asgari, A.H. MacDonald, K. Horn, E. Rotenberg, Phys. Rev. B 84 (2011) 085410.
98. High-Transconductance Graphene Solution-Gated Field Effect Transistors
L.H. Hess, M.V. Hauf, M. Seifert, M. Stutzmann, I.D. Sharp, J.A. Garrido, F. Speck, Th. Seyller, Appl. Phys. Lett. 99 (2011) 033503.
97. Multicomponent magneto-optical conductivity of multilayer graphene on SiC
I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, Th. Seyller, A. B. Kuzmenko, Phys. Rev. B 84, (2011) 035103.
96. Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, T. Seyller, H.B. Weber, Solid State Comm. 151 (2011) 1061.
95. Highly p-doped graphene obtained by fluorine intercalation
A.L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y.S. Kim, Y.J. Chang, K. Horn, E. Rotenberg, Appl. Phys. Lett. 98 (2011) 184102.
94. Bottom gated epitaxial graphene
D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M .Krieger, H.B. Weber, Nature Materials 10 (2011) 357.
93. The interaction of Xe and Xe + K with graphene
A. Bostwick, J.L. McChesney, T. Ohta, K.V. Emtsev, Th. Seyller, K. Horn, E. Rotenberg, J. Electron. Spectrosc. Relat. Phenom. 183 (2011) 118.
92. A momentum space view o f the surface chemical bond
S. Berkebile, T. Ules, P. Puschnig, L. Romaner, G. Kuller, A.J. Fleming, K. Emtsev, Th. Seyller, C. Ambrosch-Draxl, F.P. Netzer, M.G. Ramsey, Phys. Chem. Chem. Phys. 13 (2011) 3604.
91. Giant Faraday rotation in single- and multilayer graphene
I. Crassee, J. Levallois, A.L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, Th. Seyller, D. van der Marel, A.B. Kuzmenko, Nature Physics 7 (2010) 48.
2010
90. Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem
R.J. Koch, Th. Seyller, J.A. Schaefer, Phys. Rev. B 82 (2010) 201413(R).
89. Automated preparation of high quality epitaxial graphene on 6H–SiC(0001)
M. Ostler, F. Speck, M. Gick, Th. Seyller, Phys. Stat. Sol. B 247 (2010) 2924.
88. The interaction of quasi-particles in graphene with chemical dopants
A. Bostwick, T. Ohta, J.L. McChesney, K.V. Emtsev, F. Speck, Th. Seyller, K. Horn, S.D. Kevan, E. Rotenberg, New J. Phys. 12 (2010) 125014.
87. Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
J. Ristein, W. Zhang, F. Speck, M. Ostler, L.Ley, Th. Seyller, J. Phys. D: Appl. Phys. 43 (2010) 345303.
86. Observation of Plasmarons in Quasi-Freestanding Doped Graphene
A. Bostwick, F. Speck, Th. Seyller, K. Horn, M. Pulini, R. Asgari, A. H. MacDonald, E. Rotenberg, Science 328 (2010) 999.
85. Quantum oscillations and quantum Hall effect in epitaxial graphene
J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. K. Maude, Th. Seyller, H. B. Weber, Phys. Rev. B 81 (2010) 195434.
84. Extended van Hove Singularity and Superconducting Instability in Doped Graphene
J. L. McChesney, A. Bostwick, T. Ohta, Th. Seyller, K. Horn, J. González, and E. Rotenberg, Phys. Rev. Lett. 104 (201) 136803.
83. Epitaxial graphene on silicon carbide
P.N. First, W.A. de Heer, Th. Seyller, C. Berger, J.A. Stroscio, J.S. Moon, MRS Bulletin 35 (2010) 296.
82. Quasi-freestanding graphene on SiC(0001)
F. Speck, M. Ostler, J. Röhrl, J. Jobst, D. Waldmann, M. Hundhausen, L. Ley, H.B. Weber, Th. Seyller, Mater. Sci. Forum, 645-648 (2010) 629.
81. Transport properties of single-layer epitaxial graphene on 6H-SiC (0001)
J. Jobst, D. Waldmann, K.V. Emtsev, Th. Seyller, H.B. Weber, Mater. Sci. Forum, 645-648 (2010) 637.
80. Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
J. Röhrl, M. Hundhausen, F. Speck, Th. Seyller, Mater. Sci. Forum 645-648 (2010) 603.
79. Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
F. Speck, M. Ostler, J. Röhrl, K. V. Emtsev, M. Hundhausen, L. Ley, Th. Seyller, Phys. Stat. Sol. C 7 (2010) 398.
78. Influence of the growth conditions ofepitaxial graphene on the film topography and the electron transport properties
S. Weingart, C. Bock, U. Kunze, K.V. Emtsev, Th. Seyller, L. Ley, Physica E: Low-dimensional Systems and Nanostructures 42 (2010) 687.
2009
77. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
S. Weingart, C. Bock, U. Kunze, F. Speck, Th. Seyller, L. Ley, Appl. Phys. Lett. 95 (2009) 262101
76. Experimental studies of the electronic structure of graphene
A. Bostwick, J. McChesney, T. Ohta, E. Rotenberg, Th. Seyller, K. Horn, Progr. Surf. Sci. 84 (2009) 380.
75. The electronic structure of pentacene revisited
S. Berkebile, G. Kuller, A.J. Fleming, P Puschnig, C. Ambrosch-Draxl, K. Emtsev, Th. Seyller, J. Riley, M.G. Ramsey, J. Electron. Spectrosc. Relat. Phenom. 174 (2009) 22
74. Reconstruction of Molecular Orbital Densities from Photoemission Data
P. Puschnig, S. Berkebile, A. J. Fleming, G. Kuller, K. V. Emtsev, Th. Seyller, J. D. Riley, C. Ambrosch-Draxl, F. P. Netzer, M. G. Ramsey, Science 326 (2009) 702
73. Quasiparticle Transformation during a Metal-Insulator Transition in Graphene
A. Bostwick, J. L. McChesney, K. V. Emtsev, Th. Seyller, K. Horn, S. D. Kevan, E. Rotenberg, Phys. Rev. Lett. 103 (2009) 056404
72. Photoemission of Ga1–xMnx As with high Curie temperature and transformation into MnAs of zincblende structure
O. Rader, S. Valencia, W. Gudat, K.W. Edmonds, R.P. Campion, B.L. Gallagher, C.T. Foxon, K.V. Emtsev, Th. Seyller, Phys. Stat. Sol. B 246 (2009) 1435
71. Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene
J.A. Robinson, C.P. Puls, N.E. Staley, J.P. Stitt, M.A. Fanton, K.V. Emtsev, Th. Seyller, Y. Liu, Nano Lett. 9 (2009) 964.
70. Friction and dissipation in epitaxial graphene films
T. Filleter, J.L. McChesney, A. Bostwick, E. Rotenberg, K.V. Emtsev, Th. Seyller, K. Horn, R. Bennewitz, Phys. Rev. Lett. 102 (2009) 086102.
69. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber, Th. Seyller, Nature Materials 8 (2009) 203.
2008
68. Local work function measurements of epitaxial graphene
T. Filleter, K.V. Emtsev, Th. Seyller, R. Bennewitz, Appl. Phys. Lett. 93 (2008) 133117.
67. Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)
S. Andres, C. Pettenkofer, F. Speck, Th. Seyller, J. Appl. Phys. 103 (2008) 103720.
66. Raman spectra of epitaxial Graphene on SiC(0001)
J. Röhrl, M. Hundhausen, K.V. Emtsev, Th. Seyller, R. Graupner, and L. Ley, Appl. Phys. Lett. 92 (2008) 201918.
65. Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy
P. Lauffer, K. V. Emtsev, R. Graupner, Th. Seyller, L. Ley, Phys. Stat. Sol. B 245 (2008) 2064.
64. Plasmon dispersion and damping in electrically-isolated two-dimensional charge sheets
Y. Liu, R.F. Willis, K.V. Emtsev, Th. Seyller, Phys. Rev. B 78 (2008) 201403(R).
63. Epitaxial Graphene: A new Material
Th. Seyller, A. Bostwick, K.V. Emtsev, K. Horn, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg, F. Speck, Phys. Stat. Sol. B 245 (2008) 1436.
62. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
S.A. Reshanov, K.V. Emtsev, F. Speck, K.-Y. Gao, Th. Seyller, G. Pensl, L. Ley, Phys. Stat. Sol. B 245 (2008) 1369.
61. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
G. Pensl, S. Beljakowa, T. Frank, K.-Y. Gao, F. Speck, Th. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, S. Shamuilia, T. Kimoto, A. Schöner, Phys. Stat. Sol. B 245 (2008) 1378.
60. Graphene layers on silicon carbide studied by Raman spectroscopy
J. Röhrl, M. Hundhausen, K.V. Emtsev, Th. Seyller, and L. Ley, Mater. Sci. Forum 600-603 (2008) 567.
59. Morphology of graphene thin film growth on SiC(0001)
T. Ohta, F. El Gabaly, A. Bostwick, J.L. McChesney, K.V. Emtsev, A.K. Schmid, Th. Seyller, K. Horn, E. Rotenberg, New. J. Phys. 10 (2008) 023034.
58. Atomic and electronic structure of few layer graphene on SiC(0001) studied by STM and STS
P. Lauffer, K.V. Emtsev, R. Graupner, Th. Seyller, L. Ley, S. A. Reshanov, H. B. Weber, Phys. Rev. B 77 (2008) 155426.
57. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
K.V. Emtsev, F. Speck, Th. Seyller, J.Riley, L. Ley, Phys. Rev. B 77 (2008) 155303.
56. Photoemission studies of graphene on SiC: growth, interface, and electronic structure
A. Bostwick, K.V. Emtsev, K. Horn, E. Huwald, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg, F. Speck, Th. Seyller, Advances in Solid State Physics 47 (2008) 159.
55. Origin of the energy bandgap in epitaxial graphene
E. Rotenberg, A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, Nature Materials 7 (2008) 258.
2007
54. Symmetry Breaking in Few Layer Graphene Films
A. Bostwick, T. Ohta, J. L. McChesney, K.V. Emtsev, Th. Seyller, K. Horn, E. Rotenberg, New J. Phys. 9 (2007) 385.
53. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon
K.Y. Gao, F. Speck, K.V. Emtsev, Th. Seyller, L. Ley, J. Appl. Phys. 102 (2007) 094503.
52. Band structure and many body effects in graphene
A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, The European Physical Journal - Special Topics 148 (2007) 5.
51. Renormalization of graphene bands by many-body interactions
A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, Solid State Communications 143 (2007) 63.
50. Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy
T. Ohta, A. Bostwick, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, Phys. Rev. Lett. 98 (2007) 206802.
49. Quantum Size Effects in quasi freestanding Pb layers
J.H. Dil, T.U. Kampen, B. Hülsen, Th. Seyller, K. Horn, Phys. Rev. B 75 (2007) 161401(R).
48. 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3.
S. Beljakowa, T. Frank, G. Pensl, K.-Y. Gao, F. Speck, Th. Seyller, Mater. Sci. Forum 556-557 (2007) 627.
47. Initial stages of the graphite-SiC(0001) interface formation studied by photoelectron spectroscopy
K.V. Emtsev, Th. Seyller, F. Speck, L. Ley, P. Stojanov, J.D. Riley, R.G.C. Leckey, Mater. Sci. Forum 556-557 (2007) 525.
46. Electronic structure of graphite/6H-SiC interfaces
Th. Seyller, K.V. Emtsev, F. Speck, K.-Y. Gao, L. Ley, Mater. Sci. Forum 556-557 (2007) 701.
45. Quasiparticle Dynamics in Graphene
A. Bostwick, T. Ohta, Th. Seyller, K. Horn, E. Rotenberg, Nature Physics 3 (2007) 36.
2006
44. Controlling the Electronic Structure of Bilayer Graphene
T. Ohta, A. Bostwick, Th. Seyller, K. Horn, E. Rotenberg, Science 313 (2006) 951.
43. Electronic Properties of SiC Surfaces and Interfaces: Some Fundamental and Technological Aspects
Th. Seyller, Appl. Phys. A 85 (2006) 376.
42. Interface of atomic layer deposited Al2O3 on H-terminated silicon
K.-Y. Gao, F. Speck, K.V. Emtsev, Th. Seyller, L. Ley, M. Oswald, W. Hansch, Phys. Stat. Sol. (A) 203 (2006) 2194.
41. How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account
K.-Y. Gao, Th. Seyller, L. Ley, Solid. State. Comm., 139 (2006) 370.
40. Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
Th. Seyller, K.V. Emtsev, F. Speck, K.-Y. Gao, L. Ley, Appl. Phys. Lett. 88 (2006) 242103.
39. Structural and electronic properties of graphite layers grown on SiC(0001)
Th. Seyller, K.V. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, O. Rader, A. Varykhalov, A.M. Shikin, Surf. Sci. 600 (2006) 3906.
38. Electronic properties of clean unreconstructed 6H-SiC{0001} surfaces studied by angle resolved photoelectron spectroscopy
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, M. Preuss, Surf. Sci. 600 (2006) 3845.
37. Correlation effects at the ideal SiC{0001}-(1×1) surfaces
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, M. Preuss, Phys. Rev. B 73 (2006) 075412.
2005
36. Hydrogen terminated 4H-SiC(11-20) and (1-100) surfaces studied by synchrotron x-ray photoelectron spectroscopy
Th. Seyller, R. Graupner, N. Sieber, K.V. Emtsev, L. Ley, A. Tadich, J.D. Riley, R.C.G. Leckey, Phys. Rev. B 71 (2005) 245333.
35. Surface band structure studies of Si-rich reconstructions on 4H-SiC(1-100)
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 483-485 (2005) 547.
34. ALD deposited Al2O3 on 6H-SiC(0001) under Annealing in Hydrogen Atmosphere
K.-Y. Gao, K.V. Emtsev, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, Mater. Sci. Forum 483-485 (2005) 559.
33. Hydrogen-saturated SiC-surfaces: model systems for studies of passivation, reconstruction, and interface formation
Th. Seyller, Mater. Sci. Forum 483-485 (2005) 535.
32. Mapping Disorder-Order Induced Changes To The Fermi Surface Of Cu3Au Using A New Toroidal Electron Energy Analyser
A. Tadich, L. Broekman, J. Riley, R. Leckey, Th. Seyller, K.V. Emtsev, L. Ley, J. Electron. Spectrosc. Relat. Phenom. 144-147 (2005) 515.
30. First results from a second generation toroidal electron spectrometer
L. Broekman, A. Tadich, E. Huwald, J. Riley, R. Leckey, Th. Seyller, K.V. Emtsev, L. Ley, J. Electron. Spectrosc. Relat. Phenom. 144-147 (2005) 1001.
2004
29. The Adsorption Sites of Rare Gases on Metallic Surfaces: A Review
R. D. Diehl, Th. Seyller, M. Caragiu, G. S. Leatherman, N. Ferralis, K. Pussi, P. Kaukasoina, M. Lindroos, J. Phys.: Cond. Matter. 16 (2004) S2839.
28. Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition
Th. Seyller, K. Gao, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 457-460 (2004) 1369.
27. Initial stages of thermal oxidation of 4H-SiC() studied by photoelectron spectroscopy
Th. Seyller, K.V. Emtsev, R. Graupner, L. Ley, Mater. Sci. Forum 457-460 (2004) 1317.
26. The atomic structure of hydrogen saturated a-planes of 4H-SiC
Th. Seyller, N. Sieber, K.V. Emtsev, R. Graupner, L. Ley, A. Tadich, D. James, J.D. Riley, R.C.G. Leckey, M. Pulcik, Mater. Sci. Forum 457-460 (2004) 395.
25. Passivation of Hexagonal SiC Surfaces by Hydrogen Termination
Th. Seyller, J. Phys.: Cond. Matter. 16 (2004) S1755.
2003
24. Doping of single-walled carbon nanotube bundles by Brønsted acids
R. Graupner, J. Abraham, A. Vencelova, Th. Seyller, F. Hennrich, M. M. Kappes,A. Hirsch, L. Ley, Phys. Chem. Chem. Phys. 5 (2003) 5472.
23. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
K.Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J.D. Riley, R.C.G. Leckey, Appl. Phys. Lett. 83 (2003) 1830.
22. Adsorption Geometry of Cu(110)-(2x12)-14Xe
M. Caragiu, Th. Seyller, R.D. Diehl, Surf. Sci. 539 (2003) 165.
21. Synchrotron x-ray photoelectron spectroscopy study of hydrogen terminated 6H-SiC{0001} surfaces
N. Sieber, Th. Seyller, L. Ley, M. Pulcik, D. James, J. Riley, R. Leckey, Phys. Rev. B 67 (2003) 205304.
20. Stacking Rearrangement at 6H-SiC(0001) Surfaces during Thermal Hydrogenation
Th. Seyller, N. Sieber, T. Stark, L. Ley, C.A. Zorman, M. Mehregany, Surf. Sci. 532-535 (2003) 698.
2002
19. Dynamical LEED study of Pd(111)-(√3x√3)R30°-Xe
M. Caragiu, Th. Seyller, R. D. Diehl, Phys. Rev. B 66 (2002) 195411.
18. Origin of the split Si-H stretch mode on hydrogenated 6H-SiC(0001): Titration of crystal truncation
N. Sieber, T. Stark, Th. Seyller, L. Ley, C.A. Zorman, Appl. Phys. Lett. 80 (2002) 4726, and Appl. Phys. Lett. 81 (2002) 1534.
17. A high resolution photoemission study of hydrogen terminated 6H-SiC surfaces
N. Sieber, Th. Seyller, L. Ley, M. Pulcik, D. James, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 389-393 (2002) 713.
16. Wet-chemical preparation of silicate adlayer terminated SiC(0001) surfaces studied by PES and LEED
N. Sieber, Th. Seyller, R. Graupner, L. Ley, R. Mikalo, P. Hoffmann, D. Batchelor, D. Schmeißer, Mater. Sci. Forum 389-393 (2002) 717.
2001
15. PES and LEED Study of Hydrogen and Oxygen terminated 6H-SiC(0001) and (000-1) Surfaces
N. Sieber, Th. Seyller, R. Graupner, L. Ley, R. Mikalo, P. Hoffmann, D.R. Batchelor, D. Schmeißer, Appl. Surf. Sci. 184 (2001) 280.
14. Hydrogenation of 6H-SiC as a surface passivation stable in air
N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, Diam. Relat. Mater. 10 (2001) 1291.
13. Preparation and characterization of hydrogen terminated 6H-SiC
N. Sieber, Th. Seyller, B. F. Mantel, J. Ristein, L. Ley, Mater. Sci. Forum 353-356 (2001) 223.
12. Surface, interface and bulk properties of GaAs(111)B treated by Se layers
P. X. Feng, J. D. Riley, R. C. G. Leckey, P. J. Pigram, Th. Seyller, L. Ley, J. Phys. D 34 (2001) 678.
11. Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs(001)
P. Feng, F. Gard, J. D. Riley, P. J. Pigram, R. Leckey, Th. Seyller, L. Ley, J. Electron Spectrosc. Relat. Phenom. 114 (2001) 527.
10. The adsorption geometry of Ag(111)-(√7x√7)R19.1°-4Ar studied by LEED
M. Caragiu, G. S. Leatherman, Th. Seyller, R. D. Diehl, Surf. Sci. 475 (2001) 89.
9. Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, D. Schmeißer, Appl. Phys. Lett. 78 (2001) 1216.
2000
8. Low-energy electron diffraction study of krypton on Cu(110)
Th. Seyller, M. Caragiu, R. D. Diehl, Surf. Sci. 454 (2000) 55.
1999
7. LEED and STM study of Cs on Cu(211)
M. Caragiu, Th. Seyller, R. D. Diehl, A. G. Norris, R. McGrath, C. A. Muryn, Surf. Rev. Lett. 6 (1999) 865.
6. Dynamical LEED study of Pt(111)-(√3x√3)R30°-Xe
Th. Seyller, M. Caragiu, R. D. Diehl, P. Kaukasoina, and M. Lindroos, Phys. Rev. B 60 (1999) 11084.
5. Low-energy electron diffraction study of the multilayer relaxation of Cu(211)
Th. Seyller, R. D. Diehl, and F. Jona, J. Vac. Sci. Technul. A 17 (1999) 1635.
4. Characterization of K and Cs adsorption on Fe(110)
Th. Seyller, R. Haseneder, E. Reinhart, D. Borgmann, G. Wedler, Surf. Sci. 424 (1999) 278.
1998
3. Observation of top-site adsorption for Xe on Cu(111)
Th. Seyller, M. Caragiu, R. D. Diehl, P. Kaukasoina, M. Lindroos, Chem. Phys. Lett. 291 (1998) 567.
2. CO as adsorbate and reaction product in the systems Fe(110)/Cs+CO and Fe(110)/Cs+CO2
Th. Seyller, K. Rührnschopf, D. Borgmann, and G. Wedler, Surf. Rev. Lett 5 (1998) 569.
1. Interaction of CO2 with Cs-promoted Fe(110) as compared to Fe(110)/K+CO2
Th. Seyller, D. Borgmann, and G. Wedler, Surf. Sci. 400 (1998) 63.