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DFG Research Unit 1154 "Towards Molecular Spintronics"
Projects

DFG Research Unit 1154 „Towards Molecular Spintronics“

Projects:

Project Partners Institution
SP1
  • Part I: Thin films of redox-active high-spin molecules
  • Part II: Monolayers of redox-active high-spin molecules on conducting and ferromagnetic metals: Control of selfassembly and integration into devices
Kersting UL
SP2
  • Part I:Preparation of spin coated thin films and self-assembled monolayers of magnetic transition metal complexes
  • Part II: From the preparation of monomolecular layers to thin films of magnetic transition metal complexes towards their integration into spintronic devices
Rüffer, Lang TUC
SP3
  • Part I + II: Electronic structure, transport, and collective effects in molecular layered systems
Kortus,
Timm
TUF,
TUD
SP4
  • Part I + II: Electron spin resonance and magnetic studies
Kataev,
Klingeler,
Büchner
IFW,
UH
IFW/TUD
SP5
  • Part I: Spin dynamics in single molecules and thin films studied by nuclear probe spectroscopy
Klauss TUD
SP6
  • Part I + II: Scanning tunneling microscopy and spectroscopy of magnetic molecules
Hess,
Hietschold
IFW,
TUC
SP7
  • Part I: Spectroscopic studies of magnetic molecular materials
  • Part II: Spectroscopic studies of magnetic molecular materials and their interfaces
Knupfer,
Zahn
IFW,
TUC
SP8
  • Part I + II:From the preparation of molecular layers and their (magneto-)optical investigation towards laterally stacked devices
Salvan, Zahn, Hiller TUC
SP9
  • Part I: Transport through spin polarized semiconductor/molecule/semiconductor tunnel junctions
  • Part II: Vertical magneto-resistive devices made from hybrid metal/molecules/metal multi-layer systems
Schmidt,
Hess
IFW/TUC
IFW

 

SP1. | SP2. | SP3. | SP4. | SP5. | SP6. | SP7. | SP8. | SP9. | [close]

SP9: Transport through spin-polarized semiconductor/molecule/semiconductor tunnel junctions

This project aims at polarizable molecular spins in a tunneling barrier manipulated by an external magnetic field and operated as true spin valves, either for the generation or the control of highly spin-polarized currents. However, transport through magnetic self-assembled molecular layers (SAM) has been limited to metal/molecule/metal or - in much fewer cases - metal/molecule/semiconductor junctions. Ultimately, it would be desirable to create a metal free semiconductor/molecule/semiconductor (S/SAM/S) junction to make full use of the unique band structure tunability of intentionally doped semiconductors. In a first approximation, for semiconductor/molecule junctions, the corresponding barrier height is the energy difference between the edge of the conduction or valence band and the LUMO or HOMO, respectively, depending on the semiconductor doping type [A6]. Once the barrier can be tuned by changing the semiconductor doping type, S/SAM/S junctions would allow us to control the charge injection in the magnetic molecules by carefully setting the doping concentration of both semiconducting electrodes. This would for example allow studying transport through a p-type/molecule/n-type junction, which - for degenerate semiconductors - could reveal new features in the IV curve of an interband tunneling diode. Furthermore, a technique that allows large scale integration of S/SAM/S devices on a single chip would be highly desirable. While the assembly of molecules on a semiconductor (and therefore a bottom contact) is possible, the great challenge is to establish an equally good top semiconductor contact to a molecular layer, which has not been achieved, yet. The aim of this project is therefore to fabricate - for the first time - molecular magnet-based S/SAM/S spin-valves and the investigation of the transport properties of such vertical, but also horizontal devices.