Spectroscopic ellipsometry is a fast, highly sensitive and non-invasive technique for characterising thin films

It is widely used to determine film thickness and dielectric functions, particularly in semiconductor materials

The device detects the change in polarisation of the reflected light as angles Ψ and Δ, which are then modelled to derive the thickness and optical constants of the material

A significant limitation is the indirect nature of the analysis, which requires optical model fitting to extract material properties

Thanks to the versatility of this device, it is able to map the morphology of the film in a grid-like manner by collecting data at multiple sample points (mapping)

It can also be reconfigured as a spectrophotometer to analyse absorption in transmission mode

75 W Xenon-Lampe

spectral range: 5,1 - 0,7 eV (240 - 1770 nm)

spectral resolution: 0,03 eV