Field emission scanning electron microscope NEON40EsB with EDXS and EBSD
Technical specifications:
- Microscope
- Imaging of top, ground or fractured surfaces of:
- Starting materials (powder, fibres, films)
- Materials, composites and composite materials
- Coatings
- Components
- Magnifications: 50x to several 100,000x
- Detectors:
- Chamber detector for secondary electrons
- Chamber detector for backscattered electrons
- Inlens detector for secondary electrons
- Inlens detector for backscattered electrons
- Bright and dark field detector for transmitted electrons
- Energy dispersive X-ray microdomain analysis (EDXS) EDAX Genesis
- Local chemical analysis on flat surfaces:
- for elements with order number Z ≥ 8
- Detection limit approx. 0.5 wt.% for Z ≥ 11
- Quantification error approx. 2 wt.% for main components
- Species:
- Average analysis
- Phase analysis (for particle dimension > 1 µm)
- Element concentration distribution along a straight line (linescan)
- Two-dimensional element concentration distribution (mapping)
- Backscattered electron diffraction (EBSD) EDAX TSL
- Grain orientation analysis, orientation mapping, texture analysis
- Identification of crystalline phases, phase mapping
