Professorship | Professorship of Power Electronics | Faculty of Electrical Engineering and Information Technology | TU Chemnitz
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Professorship of Power Electronics
Professorship
Professorship of Power Electronics 
Professorchip

Welcome to the Professorship of Power Electronics!

The research focus of the Professorship of Power Electronics is the investigation of robustness and reliability of power semiconductor devices. The main focus is on the topics of overload capability (short circuit, surge current, avalanche) and power cycling ruggedness. This includes the consideration of the semiconductor materials Si, SiC and GaN. Semiconductor and thermomechanical simulations on FEM basis are being used to examine internal physical processes further in detail.
Until 2020 the professorship was headed by Prof. Dr.-Ing. Prof. h.c. Josef Lutz. After that Prof. Dr.-Ing. Thomas Basler took over.

News

From August 27 to August 29, 2025, the “International Seminar on Power Semiconductors†ISPS will take place in Prague. The focus will be on discussing news in new semiconductor devices. TU Chemnitz will be represented by Prof. Dr. Josef Lutz, who serves as Chairman of the INTERNATIONAL PROGRAMME COMMITTEE. Doctoral candidates from the department will contribute four papers to the conference program, demonstrating a strong presence. The high-caliber program can be found here.

At the prestigious ISPSD 25 Power Semiconductor Conference in Kumamoto, Japan, doctoral candidates and alumni from the Power Electronics Chair at TU Chemnitz successfully presented their work. With only 10 accepted papers out of all submissions from Germany, TU Chemnitz stands out with two oral presentations and two posters - an especially notable contribution. ISPSD2025

   

High efficient power module, which switches currents at high voltage levels even more reliable, faster and more powerfull and is contribution to the "Energiewende" --> Article at TUC (german only)
"Chemnitz mischt beim Deutschen Zukunftspreis mit" --> Article at Zeit (german only)

Within the novel online format of PCIM Europe, an article from Prof. Basler with the titel: "Power electronics in the fight against climate change" was published

Dr. Dong Xie received the best poster award at the conference IPEMC 2024-ECCE Asia with his topic "Fault Diagnosis for the Cascaded H-Bridge Multilevel Converter Considering Fault Coupling Between Switches and Sensors".

Further information

As part of a day excursion, pupils of the Ulf-Merbold-Gymnaisums enrolled in advanced courses for physics visited the university of technology, Chemnitz. Here, they got a general insight into the energy technology and power electronics, especially. A comprehensice article can be read in the following (german only) Article.

Speaker: Ing. Valerie Montabonnet and Dr.-Ing. Davide Aguglia, CERN. The event starts at 03:30 pm at room 2/N112.

Further information

Speaker: Dr.-Ing. Alexander Rambetius, Valeo Siemens. The event starts at 03:30 pm at room 2/N113.

Further information

The recently at the ETG journal published article from Professor Lutz and Professor Basler can be found here:

PDF

In the following article, an offical statement of Prof. Lutz can be found (german only):

Christian Schwabe, PhD Student at the Chair of Power Electronics at the Technical University of Chemnitz, received at the -PCIM Europe 2021-, the biggest conference for power electronics in europe, the Young Engineer Award. The article (german) can be found here TU Homepage or as .

The whole article (in german) can be found here:

[...] Older releases

Recent Publications

Nr. Titel Autoren Jahr
1 Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime Hein, Lukas* et al. 2025
2 Analysis of Aged Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck Gürlek, Yavuz* et al. 2025
3 Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck Gürlek, Yavuz* et al. 2025
4 Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates Alaluss, Mohamed* et al. 2025
5 Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips Abuogo, James et al. 2025
6 Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution Bäumler, Christian* et al. 2025
7 Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings Heimler, Patrick* et al. 2025
8 Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs Abuogo, James* et al. 2025
9 Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs Boldyrjew-Mast, Roman* et al. 2025
10 Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs Mysore, Madhu Lakshman* et al. 2025