Professorship | Professorship of Power Electronics | Faculty of Electrical Engineering and Information Technology | TU Chemnitz
Jump to main content
Professorship of Power Electronics
Professorship
Professorship of Power Electronics 
Professorchip

Welcome to the Professorship of Power Electronics!

The research focus of the Professorship of Power Electronics is the investigation of robustness and reliability of power semiconductor devices. The main focus is on the topics of overload capability (short circuit, surge current, avalanche) and power cycling ruggedness. This includes the consideration of the semiconductor materials Si, SiC and GaN. Semiconductor and thermomechanical simulations on FEM basis are being used to examine internal physical processes further in detail.
Until 2020 the professorship was headed by Prof. Dr.-Ing. Prof. h.c. Josef Lutz. After that Prof. Dr.-Ing. Thomas Basler took over.

News

From August 27 to August 29, 2025, the “International Seminar on Power Semiconductors” ISPS will take place in Prague. The focus will be on discussing news in new semiconductor devices. TU Chemnitz will be represented by Prof. Dr. Josef Lutz, who serves as Chairman of the INTERNATIONAL PROGRAMME COMMITTEE. Doctoral candidates from the department will contribute four papers to the conference program, demonstrating a strong presence. The high-caliber program can be found here.

At the prestigious ISPSD 25 Power Semiconductor Conference in Kumamoto, Japan, doctoral candidates and alumni from the Power Electronics Chair at TU Chemnitz successfully presented their work. With only 10 accepted papers out of all submissions from Germany, TU Chemnitz stands out with two oral presentations and two posters - an especially notable contribution. ISPSD2025

   

High efficient power module, which switches currents at high voltage levels even more reliable, faster and more powerfull and is contribution to the "Energiewende" --> Article at TUC (german only)
"Chemnitz mischt beim Deutschen Zukunftspreis mit" --> Article at Zeit (german only)

Within the novel online format of PCIM Europe, an article from Prof. Basler with the titel: "Power electronics in the fight against climate change" was published

Dr. Dong Xie received the best poster award at the conference IPEMC 2024-ECCE Asia with his topic "Fault Diagnosis for the Cascaded H-Bridge Multilevel Converter Considering Fault Coupling Between Switches and Sensors".

Further information

As part of a day excursion, pupils of the Ulf-Merbold-Gymnaisums enrolled in advanced courses for physics visited the university of technology, Chemnitz. Here, they got a general insight into the energy technology and power electronics, especially. A comprehensice article can be read in the following (german only) Article.

Speaker: Ing. Valerie Montabonnet and Dr.-Ing. Davide Aguglia, CERN. The event starts at 03:30 pm at room 2/N112.

Further information

Speaker: Dr.-Ing. Alexander Rambetius, Valeo Siemens. The event starts at 03:30 pm at room 2/N113.

Further information

The recently at the ETG journal published article from Professor Lutz and Professor Basler can be found here:

PDF

In the following article, an offical statement of Prof. Lutz can be found (german only):

Christian Schwabe, PhD Student at the Chair of Power Electronics at the Technical University of Chemnitz, received at the -PCIM Europe 2021-, the biggest conference for power electronics in europe, the Young Engineer Award. The article (german) can be found here TU Homepage or as .

The whole article (in german) can be found here:

[...] Older releases

Recent Publications

Nr. Titel Autoren Jahr
1 Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators Ge, Xinglai et al. 2026
2 Impact of Package Degradation on Short-Circuit Robustness and Temperature Stability during Application-Close Repetitive Switching of IGBTs Bumler, Christian 2026
3 Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations Mysore, Madhu Lakshman* et al. 2026
4 Influence of Interface Traps and Cell Design on Dynamic VSD Behaviour in Double-Trench SiC MOSFETs Mysore, Madhu Lakshman et al. 2026
5 Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes Heimler, Patrick* et al. 2026
6 On the Reverse Recovery of SiC MOSFET Inverse Diodes Lutz, Josef* et al. 2026
7 Reliability of Wide Bandgap Semiconductors for Automotive Applications Kaminski, Nando* et al. 2026
8 SiC MOSFETs in Parallel Switching for MW Inverter Applications Ye, Yijun et al. 2026
9 Three-Level Gate Driver for Slew Rate Control in Reliability-OrientedVoltage Switching Tests Dash, Sarthank Swaroop et al. 2026
10 Towards Understanding the Fast Degradation of the On-State Resistance in LDMOS Devices Prigann, Sven et al. 2026