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Technische Physik
Technical Physics

Prof. Dr. Thomas Seyller

Technische Universität Chemnitz
Institut für Physik – Technische Physik
Reichenhainer Straße 70
09126 Chemnitz
Phone: +49-371-531-32898
FAX.: +49-371-531-832898
Publications

2020

  • C. Backes, et al.: Production and processing of graphene and related materials. 2D Materials 7, 022001 (2020). (https://doi.org/10.1088/2053-1583/ab1e0a)

  • A. Sinterhauf, G. A. Traeger, D. Momeni Pakdehi, P. Schädlich, P. Willke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth: Substrate induced nanoscale resistance variation in epitaxial graphene. Nat. Commun. 11, 555 (2020). (https://doi.org/10.1038/s41467-019-14192-0)

  • M. Weber, T. Rüffer, F. Speck, F. Göhler, D. P. Weimann, C. A. Schalley, Th. Seyller, H. Lang, M. Mehring: From a Cerium-Doped Polynuclear Bismuth Oxido Cluster to β-Bi2O3:Ce. Inorg. Chem. (2020) article in press. (https://doi.org/10.1021/acs.inorgchem.9b03240)

2019

  • S. Wolff, S. Roscher, F. Timmermann, M.V. Daniel, F. Speck, M. Wanke, M. Albrecht, T. Seyller: Quasi‐Freestanding Graphene on SiC(0001) by Ar‐Mediated Intercalation of Antimony: A Route Toward Intercalation of High‐Vapor‐Pressure Elements. Ann. Phys. 531 (2019) 1900199. (https://doi.org/10.1002/andp.201900199)
  • E. C. Hadland, F. Göhler, G. Mitchson, S. S. Fender, C. Schmidt, D. R. T. Zahn, Th. Seyller, D. C. Johnson; Synthesis and Properties of (BiSe)0.97MoSe2: A Heterostructure Containing Both 2H-MoSe2 and 1T-MoSe2. Chem. Mater. 31 (2019) 5824. (https://dx.doi.org/10.1021/acs.chemmater.9b01899)
  • F. Göhler, D. M. Hamann, N. Rösch, S. Wolff, J. T. Logan, R. Fischer, F. Speck, D. C. Johnson, Th. Seyller: Electronic structure of designed [SnSe1+δ]m[TiSe2]2 heterostructure thin films with tunable layering sequence. J. Mater. Res. 34 (2019) 1965. (https://dx.doi.org/10.1557/jmr.2019.128)
  • S. Wundrack, D. Momeni Pakdehi, P. Schädlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch: Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy. Phys. Rev. B 99 (2019) 045443. (https://doi.org/10.1103/PhysRevB.99.045443)

2018

  • D. Marchenko, D. V. Evtushinsky, E. Golias, A. Varykhalov, Th. Seyller, O. Rader: Extremely flat band in bilayer graphene.
    Science Advances 4 (2018) eaau0059. (https//dx.doi.org/10.1126/sciadv.aau0059)
  • I. G. Aviziotis, A. Götze, F. Göhler, H. Kohlmann, M. Armbrüster: Activation of the Highly-Selective Pd11Bi2Se2 during the Semi-Hydrogenation of Acetylene. Z. Anorg. Allg. Chem. 644 (2018) 1777. (https://dx.doi.org/10.1002/zaac.201800342)
  • F. Göhler, E. C. Hadland, C. Schmidt, D. R. T. Zahn, F. Speck, D. C. Johnson, Th. Seyller: Growth of Nanocrystalline MoSe2-Monolayers on Epitaxial Graphene from Amorphous Precursors. Phys. Stat. Sol. B 256 (2019) 1800283. (https://dx.doi.org/10.1002/pssb.201800283)
  • S. Peter, Y. Vasin, F. Speck, M. Schmidt, V. Wittstock, Th. Seyller: ECR plasma deposited a-SiCN:H as insulating layers in piezoceramic modules. Vacuum 155 (2018) 188. (https://dx.doi.org/10.1016/j.vacuum.2018.05.055)
  • X. Fan, S. Wagner, P. Schädlich, F. Speck, S. Kataria, T. Haraldsson, Th. Seyller, M. C. Lemme, F. Niklaus: Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure, Sci. Adv. 4 (2018) eaar5170. (https://dx.doi.org/10.1126/sciadv.aar5170)
  • C. Kastl, C. T. Chen, R. J. Koch, B. Schuler, T. R. Kuykendall, A. Bostwick, C. Jozwiak, T. Seyller, E. Rotenberg, A. Weber-Bargioni, S. Aloni, and A. M. Schwartzberg: Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy. 2D Materials 5 (2018) 045010. (http://dx.doi.org/10.1088/2053-1583/aad21c)
  • F. Göhler, G. Mitchson, M. B. Alemayehu, F. Speck, M. Wanke, D. C. Johnson, and T. Seyller: Charge transfer in (PbSe)1+δ(NbSe2)2 and (SnSe)1+δ(NbSe2)2 ferecrystals investigated by photoelectron spectroscopy. Journal of Physics-Condensed Matter 30 (2018) 055001. (http://dx.doi.org/10.1088/1361-648X/aaa212)

2017

2016

  • J. M. Wofford, F. Speck, T. Seyller, J. M. J. Lopes, and H. Riechert: Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy. Journal of Applied Physics 120 (2016) 045309. (http://dx.doi.org/10.1063/1.4958862)
  • S. Ulstrup, M. Schüler, M. Bianchi, F. Fromm, C. Raidel, T. Seyller, T. Wehling, and P. Hofmann: Manifestation of nonlocal electron-electron interaction in graphene. Physical Review B 94 (2016) 081403. (http://dx.doi.org/10.1103/PhysRevB.94.081403)
  • P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, M. H. Liu, L. E. Golub, E. L. Ivchenko, V. V. Popov, D. V. Fateev, K. V. Mashinsky, F. Fromm, T. Seyller, and S. D. Ganichev: Terahertz ratchet effects in graphene with a lateral superlattice. Physical Review B 93 (2016) 075422. (http://dx.doi.org/10.1103/PhysRevB.93.075422)
  • G. Mitchson, E. Hadland, F. Göhler, M. Wanke, M. Esters, J. Ditto, E. Bigwood, K. Ta, R. G. Hennig, T. Seyller, and D. C. Johnson: Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe)(1+delta)(NbSe2)(n) (n=1-4) Heterostructures. ACS Nano 10 (2016) 9489. (http://dx.doi.org/10.1021/acsnano.6b04606)
  • D. Marchenko, A. Varykhalov, J. Sanchez-Barriga, T. Seyller, and O. Rader: Rashba splitting of 100meV in Au-intercalated graphene on SiC. Applied Physics Letters 108 (2016) 172405. (http://dx.doi.org/10.1063/1.4947286)
  • M. Kruskopf, D. M. Pakdehi, K. Pierz, S. Wundrack, R. Stosch, T. Dziomba, M. Götz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, T. Seyller, F. Hohls, F. J. Ahlers, and H. W. Schumacher: Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC. 2D Materials 3 (2016) 041002. (http://dx.doi.org/10.1088/2053-1583/3/4/041002)
  • R. J. Koch, S. Fryska, M. Ostler, M. Endlich, F. Speck, T. Hänsel, J. A. Schaefer, and T. Seyller: Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide. Physical Review Letters 116 (2016) 106802. (http://dx.doi.org/10.1103/PhysRevLett.116.106802)
  • P. Kitschke, M. Walter, T. Rüffer, A. Seifert, F. Speck, T. Seyller, S. Spange, H. Lang, A. A. Auer, M. V. Kovalenko, and M. Mehring: Porous Ge@C materials via twin polymerization of germanium(II) salicyl alcoholates for Li-ion batteries. Journal of Materials Chemistry A 4 (2016) 2705. (http://dx.doi.org/10.1039/c5ta09891b)

2015

  • S. Ulstrup, J. C. Johannsen, A. Crepaldi, F. Cilento, M. Zacchigna, C. Cacho, R. T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, F. Parmigiani, M. Grioni, and P. Hofmann: Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy. Journal of Physics-Condensed Matter 27 (2015) 164206. (http://dx.doi.org/10.1088/0953-8984/27/16/164206)
  • S. Ulstrup, J. C. Johannsen, F. Cilento, A. Crepaldi, J. A. Miwa, M. Zacchigna, C. Cacho, R. T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P. D. C. King, F. Parmigiani, M. Grioni, and P. Hofmann: Ramifications of optical pumping on the interpretation of time-resolved photoemission experiments on graphene. Journal of Electron Spectroscopy and Related Phenomena 200 (2015) 340. (http://dx.doi.org/10.1016/j.elspec.2015.04.010)
  • J. C. Johannsen, S. Ulstrup, A. Crepaldi, F. Cilento, M. Zacchigna, J. A. Miwa, C. Cacho, R. T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P. D. C. King, F. Parmigiani, M. Grioni, and P. Hofmann: Tunable Carrier Multiplication and Cooling in Graphene. Nano Letters 15 (2015) 326. (http://dx.doi.org/10.1021/nl503614v)
  • A. C. Ferrari, F. Bonaccorso, V. Fal'ko, K. S. Novoselov, S. Roche, P. Bøggild, S. Borini, F. H. L. Koppens, V. Palermo, N. Pugno, J. A. Garrido, R. Sordan, A. Bianco, L. Ballerini, M. Prato, E. Lidorikis, J. Kivioja, C. Marinelli, T. Ryhänen, A. Morpurgo, J. N. Coleman, V. Nicolosi, L. Colombo, A. Fert, M. Garcia-Hernandez, A. Bachtold, G. F. Schneider, F. Guinea, C. Dekker, M. Barbone, Z. P. Sun, C. Galiotis, A. N. Grigorenko, G. Konstantatos, A. Kis, M. Katsnelson, L. Vandersypen, A. Loiseau, V. Morandi, D. Neumaier, E. Treossi, V. Pellegrini, M. Polini, A. Tredicucci, G. M. Williams, B. H. Hong, J. H. Ahn, J. M. Kim, H. Zirath, B. J. van Wees, H. van der Zant, L. Occhipinti, A. Di Matteo, I. A. Kinloch, T. Seyller, E. Quesnel, X. L. Feng, K. Teo, N. Rupesinghe, P. Hakonen, S. R. T. Neil, Q. Tannock, T. Löfwander, and J. Kinaret: Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 7 (2015) 4598. (http://dx.doi.org/10.1039/c4nr01600a)

2014

  • P. Zeller, F. Speck, M. Weinl, M. Ostler, M. Schreck, T. Seyller, and J. Wintterlin: Healing of graphene on single crystalline Ni(111) films. Applied Physics Letters 105 (2014) 191612. (http://dx.doi.org/10.1063/1.4902057)
  • P. Wehrfritz and T. Seyller: The Hall coefficient: a tool for characterizing graphene field effect transistors. 2D Materials 1 (2014) 035004. (http://dx.doi.org/10.1088/2053-1583/1/3/035004)
  • P. Wehrfritz, F. Fromm, S. Malzer, and T. Seyller: Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate. Journal of Physics D-Applied Physics 47 (2014) 305103. (http://dx.doi.org/10.1088/0022-3727/47/30/305103)
  • A. L. Walter, H. Sahin, K. J. Jeon, A. Bostwick, S. Horzum, R. Koch, F. Speck, M. Ostler, P. Nagel, M. Merz, S. Schupler, L. Moreschini, Y. J. Chang, T. Seyller, F. M. Peeters, K. Horn, and E. Rotenberg: Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets. ACS Nano 8 (2014) 7801. (http://dx.doi.org/10.1021/nn501163c)
  • S. Ulstrup, J. C. Johannsen, F. Cilento, J. A. Miwa, A. Crepaldi, M. Zacchigna, C. Cacho, R. Chapman, E. Springate, S. Mammadov, F. Fromm, C. Raidel, T. Seyller, F. Parmigiani, M. Grioni, P. D. C. King, and P. Hofmann: Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene. Physical Review Letters 112 (2014) 257401. (http://dx.doi.org/10.1103/PhysRevLett.112.257401)
  • E. M. Reinisch, T. Ules, P. Puschnig, S. Berkebile, M. Ostler, T. Seyller, M. G. Ramsey, and G. Koller: Development and character of gap states on alkali doping of molecular films. New Journal of Physics 16 (2014) 23011. (http://dx.doi.org/10.1088/1367-2630/16/2/023011)
  • S. Peter, M. Günther, O. Gordan, S. Berg, D. R. T. Zahn, and T. Seyller: Experimental analysis of the thermal annealing of hard a-C:H films. Diamond and Related Materials 45 (2014) 43. (http://dx.doi.org/10.1016/j.diamond.2014.03.005)
  • M. Ostler, F. Fromm, R. J. Koch, P. Wehrfritz, F. Speck, H. Vita, S. Böttcher, K. Horn, and T. Seyller: Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor. Carbon 70 (2014) 258. (http://dx.doi.org/10.1016/j.carbon.2014.01.004)
  • S. Mammadov, J. Ristein, R. J. Koch, M. Ostler, C. Raidel, M. Wanke, R. Vasiliauskas, R. Yakimova, and T. Seyller: Polarization doping of graphene on silicon carbide. 2D Materials 1 (2014) 035003. (http://dx.doi.org/10.1088/2053-1583/1/3/035003)
  • A. L. Hsu, R. J. Koch, M. T. Ong, W. J. Fang, M. Hofmann, K. K. Kim, T. Seyller, M. S. Dresselhaus, E. J. Reed, J. Kong, and T. Palacios: Surface-Induced Hybridization between Graphene and Titanium. ACS Nano 8 (2014) 7704. (http://dx.doi.org/10.1021/nn502842x)
  • S. Gorantla, A. Bachmatiuk, J. Hwang, H. A. Alsalman, J. Y. Kwak, T. Seyller, J. Eckert, M. G. Spencer, and M. H. Rümmeli: A universal transfer route for graphene. Nanoscale 6 (2014) 889. (http://dx.doi.org/10.1039/c3nr04739c)
  • F. Fromm, M. Hundhausen, M. Kaiser, and T. Seyller: Backside monitoring of graphene on silicon carbide by Raman spectroscopy. Materials Science Forum 778-780 (2014) 1166. (http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.1166)

2013

  • P. Wehrfritz, F. Fromm, S. Malzer, and T. Seyller: Silicon nitride as top gate dielectric for epitaxial graphene. Materials Science Forum 740-742 (2013) 149. (http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.149)
  • D. S. Wastl, F. Speck, E. Wutscher, M. Ostler, T. Seyller, and F. J. Giessibl: Observation of 4 nm Pitch Stripe Domains Formed by Exposing Graphene to Ambient Air. ACS Nano 7 (2013) 10032. (http://dx.doi.org/10.1021/nn403988y)
  • A. L. Walter, A. Bostwick, F. Speck, M. Ostler, K. S. Kim, Y. J. Chang, L. Moreschini, D. Innocenti, T. Seyller, K. Horn, and E. Rotenberg: Small scale rotational disorder observed in epitaxial graphene on SiC(0001). New Journal of Physics 15 (2013) 023019. (http://dx.doi.org/10.1088/1367-2630/15/2/023019)
  • D. Waldmann, B. Butz, S. Bauer, J. M. Englert, J. Jobst, K. Ullmann, F. Fromm, M. Ammon, M. Enzelberger, A. Hirsch, S. Maier, P. Schmuki, T. Seyller, E. Spiecker, and H. B. Webert: Robust Graphene Membranes in a Silicon Carbide Frame. ACS Nano 7 (2013) 4441. (http://dx.doi.org/10.1021/nn401037c)
  • F. Wählisch, J. Hoth, C. Held, T. Seyller, and R. Bennewitz: Friction and atomic-layer-scale wear of graphitic lubricants on SiC(0001) in dry sliding. Wear 300 (2013) 78. (http://dx.doi.org/10.1016/j.wear.2013.01.108)
  • N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, T. Seyller, and A. B. Kuzmenko: Fabry-Perot enhanced Faraday rotation in graphene. Optics Express 21 (2013) 24736. (http://dx.doi.org/10.1364/oe.21.024736)
  • A. Tadich, M. T. Edmonds, L. Ley, F. Fromm, Y. Smets, Z. Mazej, J. Riley, C. I. Pakes, T. Seyller, and M. Wanke: Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48. Applied Physics Letters 102 (2013) 241601. (http://dx.doi.org/10.1063/1.4811248)
  • T. Schumann, M. Dubslaff, M. H. Oliveira, M. Hanke, F. Fromm, T. Seyller, L. Nemec, V. Blum, M. Scheffler, J. M. J. Lopes, and H. Riechert: Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy. New Journal of Physics 15 (2013) 123034. (http://dx.doi.org/10.1088/1367-2630/15/12/123034)
  • R. A. Schäfer, J. M. Englert, P. Wehrfritz, W. Bauer, F. Hauke, T. Seyller, and A. Hirsch: On the Way to GraphanePronounced Fluorescence of Polyhydrogenated Graphene. Angewandte Chemie-International Edition 52 (2013) 754. (http://dx.doi.org/10.1002/anie.201206799)
  • M. Ostler, I. Deretzis, S. Mammadov, F. Giannazzo, G. Nicotra, C. Spinella, T. Seyller, and A. La Magna: Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces. Physical Review B 88 (2013) 085408. (http://dx.doi.org/10.1103/PhysRevB.88.085408)
  • M. H. Oliveira, T. Schumann, R. Gargallo-Caballero, F. Fromm, T. Seyller, M. Ramsteiner, A. Trampert, L. Geelhaar, J. M. J. Lopes, and H. Riechert: Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy. Carbon 56 (2013) 339. (http://dx.doi.org/10.1016/j.carbon.2013.01.032)
  • M. H. Oliveira, T. Schumann, F. Fromm, R. Koch, M. Ostler, M. Ramsteiner, T. Seyller, J. M. J. Lopes, and H. Riechert: Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air. Carbon 52 (2013) 83. (http://dx.doi.org/10.1016/j.carbon.2012.09.008)
  • D. Marchenko, A. Varykhalov, M. R. Scholz, J. Sanchez-Barriga, O. Rader, A. Rybkina, A. M. Shikin, T. Seyller, and G. Bihlmayer: Spin-resolved photoemission and ab initio theory of graphene/SiC. Physical Review B 88 (2013) 075422. (http://dx.doi.org/10.1103/PhysRevB.88.075422)
  • T. Maassen, J. J. van den Berg, E. H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, and B. J. van Wees: Localized States Influence Spin Transport in Epitaxial Graphene. Physical Review Letters 110 (2013) 067209. (http://dx.doi.org/10.1103/PhysRevLett.110.067209)
  • K. S. Kim, A. L. Walter, L. Moreschini, T. Seyller, K. Horn, E. Rotenberg, and A. Bostwick: Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nature Materials 12 (2013) 887. (http://dx.doi.org/10.1038/nmat3717)
  • K. S. Kim, T. H. Kim, A. L. Walter, T. Seyller, H. W. Yeom, E. Rotenberg, and A. Bostwick: Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene. Physical Review Letters 110 (2013) 036804. (http://dx.doi.org/10.1103/PhysRevLett.110.036804)
  • J. C. Johannsen, S. Ulstrup, F. Cilento, A. Crepaldi, M. Zacchigna, C. Cacho, I. C. E. Turcu, E. Springate, F. Fromm, C. Raidel, T. Seyller, F. Parmigiani, M. Grioni, and P. Hofmann: Direct View of Hot Carrier Dynamics in Graphene. Physical Review Letters 111 (2013) 027403. (http://dx.doi.org/10.1103/PhysRevLett.111.027403)
  • J. C. Johannsen, S. Ulstrup, M. Bianchi, R. Hatch, D. Guan, F. Mazzola, L. Hornekaer, F. Fromm, C. Raidel, T. Seyller, and P. Hofmann: Electron-phonon coupling in quasi-free-standing graphene. Journal of Physics-Condensed Matter 25 (2013) 094001. (http://dx.doi.org/10.1088/0953-8984/25/9/094001)
  • J. Gebhardt, R. J. Koch, W. Zhao, O. Hofert, K. Gotterbarm, S. Mammadov, C. Papp, A. Gorling, H. P. Steinrück, and T. Seyller: Growth and electronic structure of boron-doped graphene. Physical Review B 87 (2013) 155437. (http://dx.doi.org/10.1103/PhysRevB.87.155437)
  • F. Fromm, P. Wehrfritz, M. Hundhausen, and T. Seyller: Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate. New Journal of Physics 15 (2013) 113006. (http://dx.doi.org/10.1088/1367-2630/15/11/113006)
  • F. Fromm, M. H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J. M. J. Lopes, H. Riechert, L. Wirtz, and T. Seyller: Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics 15 (2013) 043031. (http://dx.doi.org/10.1088/1367-2630/15/4/043031)
  • J. N. Chen, M. L. Nesterov, A. Y. Nikitin, S. Thongrattanasiri, P. Alonso-Gonzalez, T. M. Slipchenko, F. Speck, M. Ostler, T. Seyller, I. Crassee, F. H. L. Koppens, L. Martin-Moreno, F. J. G. de Abajo, A. B. Kuzmenko, and R. Hillenbrand: Strong Plasmon Reflection at Nanometer-Size Gaps in Monolayer Graphene on SiC. Nano Letters 13 (2013) 6210. (http://dx.doi.org/10.1021/nl403622t)
  • B. Birkner, D. Pachniowski, A. Sandner, M. Ostler, T. Seyller, J. Fabian, M. Ciorga, D. Weiss, and J. Eroms: Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC. Physical Review B 87 (2013) 081405. (http://dx.doi.org/10.1103/PhysRevB.87.081405)
  • L. Barreto, E. Perkins, J. Johannsen, S. Ulstrup, F. Fromm, C. Raidel, T. Seyller, and P. Hofmann: Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach. Applied Physics Letters 102 (2013) 033110. (http://dx.doi.org/10.1063/1.4789508)
  • H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M. A. Bissett, M. Tsuji, H. Sakaguchi, R. J. Koch, F. Fromm, T. Seyller, K. Komatsu, and K. Tsukagoshi: Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film. Applied Physics Express 6 (2013) 075101. (http://dx.doi.org/10.7567/apex.6.075101)

2012

  • D. Waldmann, J. Jobst, F. Fromm, F. Speck, T. Seyller, M. Krieger, and H. B. Weber: Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics 45 (2012) 154006. (http://dx.doi.org/10.1088/0022-3727/45/15/154006)
  • J. Ristein, S. Mammadov, and T. Seyller: Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide. Physical Review Letters 108 (2012) 246104. (http://dx.doi.org/10.1103/PhysRevLett.108.246104)
  • M. Orlita, I. Crassee, C. Faugeras, A. B. Kuzmenko, F. Fromm, M. Ostler, T. Seyller, G. Martinez, M. Polini, and M. Potemski: Classical to quantum crossover of the cyclotron resonance in graphene: a study of the strength of intraband absorption. New Journal of Physics 14 (2012) 095008. (http://dx.doi.org/10.1088/1367-2630/14/9/095008)
  • T. Maassen, J. J. van den Berg, N. Ijbema, F. Fromm, T. Seyller, R. Yakimova, and B. J. van Wees: Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001). Nano Letters 12 (2012) 1498. (http://dx.doi.org/10.1021/nl2042497)
  • R. J. Koch, M. Weser, W. Zhao, F. Vines, K. Gotterbarm, S. M. Kozlov, O. Hofert, M. Ostler, C. Papp, J. Gebhardt, H. P. Steinrück, A. Gorling, and T. Seyller: Growth and electronic structure of nitrogen-doped graphene on Ni(111). Physical Review B 86 (2012) 075401. (http://dx.doi.org/10.1103/PhysRevB.86.075401)
  • C. Held, T. Seyller, and R. Bennewitz: Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001). Beilstein Journal of Nanotechnology 3 (2012) 179. (http://dx.doi.org/10.3762/bjnano.3.19)
  • H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, and M. Suemitsu: Precise control of epitaxy of graphene by microfabricating SiC substrate. Applied Physics Letters 101 (2012) 041605. (http://dx.doi.org/10.1063/1.4740271)
  • I. Crassee, M. Orlita, M. Potemski, A. L. Walter, M. Ostler, T. Seyller, I. Gaponenko, J. Chen, and A. B. Kuzmenko: Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene. Nano Letters 12 (2012) 2470. (http://dx.doi.org/10.1021/nl300572y)
  • C. Bock, S. Weingart, E. Karaissaridis, U. Kunze, F. Speck, and T. Seyller: Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions. Nanotechnology 23 (2012) 395203. (http://dx.doi.org/10.1088/0957-4484/23/39/395203)

2011

  • A. L. Walter, K. J. Jeon, A. Bostwick, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y. S. Kim, Y. J. Chang, K. Horn, and E. Rotenberg: Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters 98 (2011) 184102. (http://dx.doi.org/10.1063/1.3586256)
  • A. L. Walter, A. Bostwick, K. J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y. J. Chang, M. Polini, R. Asgari, A. H. MacDonald, K. Horn, and E. Rotenberg: Effective screening and the plasmaron bands in graphene. Physical Review B 84 (2011) 085410. (http://dx.doi.org/10.1103/PhysRevB.84.085410)
  • D. Waldmann, J. Jobst, F. Speck, T. Seyller, M. Krieger, and H. B. Weber: Bottom-gated epitaxial graphene. Nature Materials 10 (2011) 357. (http://dx.doi.org/10.1038/nmat2988)
  • F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H. B. Weber, and T. Seyller: The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters 99 (2011) 122106. (http://dx.doi.org/10.1063/1.3643034)
  • J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, and S. D. Ganichev: Terahertz Radiation Driven Chiral Edge Currents in Graphene. Physical Review Letters 107 (2011) 276601. (http://dx.doi.org/10.1103/PhysRevLett.107.276601)
  • J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. K. Maude, T. Seyller, and H. B. Weber: Transport properties of high-quality epitaxial graphene on 6H-SiC(0001). Solid State Communications 151 (2011) 1061. (http://dx.doi.org/10.1016/j.ssc.2011.05.015)
  • L. H. Hess, M. V. Hauf, M. Seifert, F. Speck, T. Seyller, M. Stutzmann, I. D. Sharp, and J. A. Garrido: High-transconductance graphene solution-gated field effect transistors. Applied Physics Letters 99 (2011) 033503. (http://dx.doi.org/10.1063/1.3614445)
  • I. Crassee, J. Levallois, A. L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, T. Seyller, D. van der Marel, and A. B. Kuzmenko: Giant Faraday rotation in single- and multilayer graphene. Nature Physics 7 (2011) 48. (http://dx.doi.org/10.1038/nphys1816)
  • I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, T. Seyller, and A. B. Kuzmenko: Multicomponent magneto-optical conductivity of multilayer graphene on SiC. Physical Review B 84 (2011) 035103. (http://dx.doi.org/10.1103/PhysRevB.84.035103)
  • A. Bostwick, J. L. McChesney, T. Ohta, K. V. Emtsev, T. Seyller, K. Horn, and E. Rotenberg: The interaction of Xe and Xe plus K with graphene. Journal of Electron Spectroscopy and Related Phenomena 183 (2011) 118. (http://dx.doi.org/10.1016/j.elspec.2010.05.003)
  • S. Berkebile, T. Ules, P. Puschnig, L. Romaner, G. Koller, A. J. Fleming, K. Emtsev, T. Seyller, C. Ambrosch-Draxl, F. P. Netzera, and M. G. Ramsey: A momentum space view of the surface chemical bond. Physical Chemistry Chemical Physics 13 (2011) 3604. (http://dx.doi.org/10.1039/c0cp01458c)
  • S. Weingart, C. Bock, U. Kunze, K. V. Emtsev, T. Seyller, and L. Ley: Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties. Physica E 42 (2010) 687. (http://dx.doi.org/10.1016/j.physe.2009.11.006)
  • J. Ristein, W. Y. Zhang, F. Speck, M. Ostler, L. Ley, and T. Seyller: Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics 43 (2010) 345303. (http://dx.doi.org/10.1088/0022-3727/43/34/345303)
  • M. Ostler, F. Speck, M. Gick, and T. Seyller: Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001). Physica Status Solidi B 247 (2010) 2924. (http://dx.doi.org/10.1002/pssb.201000220)
  • J. L. McChesney, A. Bostwick, T. Ohta, T. Seyller, K. Horn, J. Gonzalez, and E. Rotenberg: Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical Review Letters 104 (2010) 136803. (http://dx.doi.org/10.1103/PhysRevLett.104.136803)
  • R. J. Koch, T. Seyller, and J. A. Schaefer: Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem. Physical Review B 82 (2010) 201413. (http://dx.doi.org/10.1103/PhysRevB.82.201413)
  • J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. K. Maude, T. Seyller, and H. B. Weber: Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B 81 (2010) 195434. (http://dx.doi.org/10.1103/PhysRevB.81.195434)
  • P. N. First, W. A. de Heer, T. Seyller, C. Berger, J. A. Stroscio, and J. S. Moon: Epitaxial Graphenes on Silicon Carbide. MRS Bulletin 35 (2010) 296. (http://dx.doi.org/10.1557/mrs2010.552)
  • A. Bostwick, F. Speck, T. Seyller, K. Horn, M. Polini, R. Asgari, A. H. MacDonald, and E. Rotenberg: Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science 328 (2010) 999. (http://dx.doi.org/10.1126/science.1186489)
  • A. Bostwick, T. Ohta, J. L. McChesney, K. V. Emtsev, F. Speck, T. Seyller, K. Horn, S. D. Kevan, and E. Rotenberg: The interaction of quasi-particles in graphene with chemical dopants. New Journal of Physics 12 (2010) 125014. (http://dx.doi.org/10.1088/1367-2630/12/12/125014)

2009

  • S. Weingart, C. Bock, U. Kunze, F. Speck, T. Seyller, and L. Ley: Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions. Applied Physics Letters 95 (2009) 262101. (http://dx.doi.org/10.1063/1.3276560)
  • J. A. Robinson, C. P. Puls, N. E. Staley, J. P. Stitt, M. A. Fanton, K. V. Emtsev, T. Seyller, and Y. Liu: Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene. Nano Letters 9 (2009) 964. (http://dx.doi.org/10.1021/nl802852p)
  • O. Rader, S. Valencia, W. Gudat, K. W. Edmonds, R. P. Campion, B. L. Gallagher, C. T. Foxon, K. V. Emtsev, and T. Seyller: Photoemission of Ga1-xMnxAs with high Curie temperature and transformation into MnAs of zincblende structure. Physica Status Solidi B 246 (2009) 1435. (http://dx.doi.org/10.1002/pssb.200945209)
  • P. Puschnig, S. Berkebile, A. J. Fleming, G. Koller, K. Emtsev, T. Seyller, J. D. Riley, C. Ambrosch-Draxl, F. P. Netzer, and M. G. Ramsey: Reconstruction of Molecular Orbital Densities from Photoemission Data. Science 326 (2009) 702. (http://dx.doi.org/10.1126/science.1176105)
  • T. Filleter, J. L. McChesney, A. Bostwick, E. Rotenberg, K. V. Emtsev, T. Seyller, K. Horn, and R. Bennewitz: Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters 102 (2009) 086102. (http://dx.doi.org/10.1103/PhysRevLett.102.086102)
  • K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller: Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials 8 (2009) 203. (http://dx.doi.org/10.1038/nmat2382)
  • A. Bostwick, J. L. McChesney, K. V. Emtsev, T. Seyller, K. Horn, S. D. Kevan, and E. Rotenberg: Quasiparticle Transformation during a Metal-Insulator Transition in Graphene. Physical Review Letters 103 (2009) 056404. (http://dx.doi.org/10.1103/PhysRevLett.103.056404)
  • A. Bostwick, J. McChesney, T. Ohta, E. Rotenberg, T. Seyller, and K. Horn: Experimental studies of the electronic structure of graphene. Progress in Surface Science 84 (2009) 380. (http://dx.doi.org/10.1016/j.progsurf.2009.08.002)
  • S. Berkebile, G. Koller, A. J. Fleming, P. Puschnig, C. Ambrosch-Draxl, K. Emtsev, T. Seyller, J. Riley, and M. G. Ramsey: The electronic structure of pentacene revisited. Journal of Electron Spectroscopy and Related Phenomena 174 (2009) 22. (http://dx.doi.org/10.1016/j.elspec.2009.04.001)

2008

  • T. Seyller, A. Bostwick, K. V. Emtsev, K. Horn, L. Ley, J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg, and F. Speck: Epitaxial graphene: a new material. Physica Status Solidi B 245 (2008) 1436. (http://dx.doi.org/10.1002/pssb.200844143)
  • E. Rotenberg, A. Bostwick, T. Ohta, J. L. McChesney, T. Seyller, and K. Horn: Origin of the energy bandgap in epitaxial graphene. Nature Materials 7 (2008) 258. (http://dx.doi.org/10.1038/nmat2154a)
  • J. Rohrl, M. Hundhausen, K. V. Emtsev, T. Seyller, R. Graupner, and L. Ley: Raman spectra of epitaxial graphene on SiC(0001). Applied Physics Letters 92 (2008) 201918. (http://dx.doi.org/10.1063/1.2929746)
  • S. A. Reshanov, K. V. Emtsev, F. Speck, K. Y. Gao, T. K. Seyller, G. Pensl, and L. Ley: Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts. Physica Status Solidi B 245 (2008) 1369. (http://dx.doi.org/10.1002/pssb.200844083)
  • G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. V. Afanas'ev, A. Stesmans, T. Kimoto, and A. Schoner: Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors. Physica Status Solidi B 245 (2008) 1378. (http://dx.doi.org/10.1002/pssb.200844011)
  • T. Ohta, F. El Gabaly, A. Bostwick, J. L. McChesney, K. V. Emtsev, A. K. Schmid, T. Seyller, K. Horn, and E. Rotenberg: Morphology of graphene thin film growth on SiC(0001). New Journal of Physics 10 (2008) 023034. (http://dx.doi.org/10.1088/1367-2630/10/2/023034)
  • Y. Liu, R. F. Willis, K. V. Emtsev, and T. Seyller: Plasmon dispersion and damping in electrically isolated two-dimensional charge sheets. Physical Review B 78 (2008) 201403. (http://dx.doi.org/10.1103/PhysRevB.78.201403)
  • P. Lauffer, K. V. Emtsev, R. Graupner, T. Seyller, L. Ley, S. A. Reshanov, and H. B. Weber: Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy. Physical Review B 77 (2008) 155426. (http://dx.doi.org/10.1103/PhysRevB.77.155426)
  • P. Lauffer, K. V. Emtsev, R. Graupner, T. Seyller, and L. Ley: Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy. Physica Status Solidi B 245 (2008) 2064. (http://dx.doi.org/10.1002/pssb.200879615)
  • T. Filleter, K. V. Emtsev, T. Seyller, and R. Bennewitz: Local work function measurements of epitaxial graphene. Applied Physics Letters 93 (2008) 133117. (http://dx.doi.org/10.1063/1.2993341)
  • K. V. Emtsev, F. Speck, T. Seyller, L. Ley, and J. D. Riley: Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study. Physical Review B 77 (2008) 155303. (http://dx.doi.org/10.1103/PhysRevB.77.155303)
  • S. Andres, C. Pettenkofer, F. Speck, and T. Seyller: Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001). Journal of Applied Physics 103 (2008) 103720. (http://dx.doi.org/10.1063/1.2924405)

2007

  • T. Ohta, A. Bostwick, J. L. McChesney, T. Seyller, K. Horn, and E. Rotenberg: Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy. Physical Review Letters 98 (2007) 206802. (http://dx.doi.org/10.1103/PhysRevLett.98.206802)
  • K. Y. Gao, F. Speck, K. Emtsev, T. Seyller, and L. Ley: Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon. Journal of Applied Physics 102 (2007) 094503. (http://dx.doi.org/10.1063/1.2803727)
  • J. H. Dil, T. U. Kampen, B. Hulsen, T. Seyller, and K. Horn: Quantum size effects in quasi-free-standing Pb layers. Physical Review B 75 (2007) 161401. (http://dx.doi.org/10.1103/PhysRevB.75.161401)
  • A. Bostwick, T. Ohta, T. Seyller, K. Horn, and E. Rotenberg: Quasiparticle dynamics in graphene. Nature Physics 3 (2007) 36. (http://dx.doi.org/10.1038/nphys477)
  • A. Bostwick, T. Ohta, J. L. McChesney, T. Seyller, K. Horn, and E. Rotenberg: Renormalization of graphene bands by many-body interactions. Solid State Communications 143 (2007) 63. (http://dx.doi.org/10.1016/j.ssc.2007.04.034)
  • A. Bostwick, T. Ohta, J. L. McChesney, T. Seyller, K. Horn, and E. Rotenberg: Band structure and many body effects in graphene. European Physical Journal-Special Topics 148 (2007) 5. (http://dx.doi.org/10.1140/epjst/e2007-00220-x)
  • A. Bostwick, T. Ohta, J. L. McChesney, K. V. Emtsev, T. Seyller, K. Horn, and E. Rotenberg: Symmetry breaking in few layer graphene films. New Journal of Physics 9 (2007) 385. (http://dx.doi.org/10.1088/1367-2630/9/10/385)

2006

  • T. Seyller, K. V. Emtsev, F. Speck, K. Y. Gao, and L. Ley: Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation. Applied Physics Letters 88 (2006) 242103. (http://dx.doi.org/10.1063/1.2213928)
  • T. Seyller, K. V. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J. D. Riley, R. C. G. Leckey, O. Rader, A. Varykhalov, and A. M. Shikin: Structural and electronic properties of graphite layers grown on SiC(0001). Surface Science 600 (2006) 3906. (http://dx.doi.org/10.1016/j.susc.2006.01.102)
  • T. Seyller: Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects. Applied Physics A 85 (2006) 371. (http://dx.doi.org/10.1007/s00339-006-3690-1)
  • T. Ohta, A. Bostwick, T. Seyller, K. Horn, and E. Rotenberg: Controlling the electronic structure of bilayer graphene. Science 313 (2006) 951. (http://dx.doi.org/10.1126/science.1130681)
  • K. Y. Gao, F. Speck, K. Emtsev, T. Seyller, L. Ley, M. Oswald, and W. Hansch: Interface of atomic layer deposited Al2O3 on H-terminated silicon. Physica Status Solidi A 203 (2006) 2194. (http://dx.doi.org/10.1002/pssa.200566014)
  • K. Y. Gao, T. Seyller, and L. Ley: How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account. Solid State Communications 139 (2006) 370. (http://dx.doi.org/10.1016/j.ssc.2006.06.026)
  • K. V. Emtsev, T. Seyller, L. Ley, A. Tadich, L. Broekman, J. D. Riley, R. C. G. Leckey, and M. Preuss: Electronic properties of clean unreconstructed 6H-SiC(0001) surfaces studied by angle resolved photoelectron spectroscopy. Surface Science 600 (2006) 3845. (http://dx.doi.org/10.1016/j.susc.2006.01.094)
  • K. V. Emtsev, T. Seyller, L. Ley, L. Broekman, A. Tadich, J. D. Riley, R. G. C. Leckey, and M. Preuss: Publisher's note: Correlation effects at ideal SiC{0001}-(1x1) surfaces (vol 73, pg 075412, 2006). Physical Review B 73 (2006) 199903. (http://dx.doi.org/10.1103/PhysRevb.73.199903)
  • K. V. Emtsev, T. Seyller, L. Ley, L. Broekman, A. Tadich, J. D. Riley, and R. G. C. Leckey: Correlation effects at ideal SiC{0001}-(1x1) surfaces. Physical Review B 73 (2006) 075412. (http://dx.doi.org/10.1103/PhysRevB.73.075412)

2005

  • A. Tadich, L. Broekman, J. Riley, R. Leckey, S. Homolya, A. E. Smith, T. Seyller, K. Emtsev, and L. Ley: Mapping disorder-order induced changes to the Fermi surface of Cu3Au using a new toroidal electron energy analyser. Journal of Electron Spectroscopy and Related Phenomena 144 (2005) 515. (http://dx.doi.org/10.1016/j.elspec.2005.01.040)
  • T. Seyller, R. Graupner, N. Sieber, K. V. Emtsev, L. Ley, A. Tadich, J. D. Riley, and R. C. G. Leckey: Hydrogen terminated 4H-SiC, (1(1)over-bar-00) and (11(2)over-bar-0) surfaces studied by synchrotron x- ray photoelectron spectroscopy. Physical Review B 71 (2005) 245333. (http://dx.doi.org/10.1103/PhysRevB.71.245333)
  • T. Seyller: Hydrogen-saturated SiC-surfaces: Model systems for studies of passivation, reconstruction, and interface formation. Materials Science Forum 483 (2005) 535. (http://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.535)
  • K. Emtsev, T. Seyller, L. Ley, A. Tadich, L. Broekman, E. Huwald, J. D. Riley, and R. G. C. Leckey: Surface band structure studies of Si rich reconstructions on 4H-SiC (1100). Materials Science Forum 483 (2005) 547. (http://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.547)
  • L. Broekman, A. Tadich, E. Huwald, J. Riley, R. Leckey, T. Seyller, K. Emtsev, and L. Ley: First results from a second generation toroidal electron spectrometer. Journal of Electron Spectroscopy and Related Phenomena 144 (2005) 1001. (http://dx.doi.org/10.1016/j.elspec.2005.01.022)

2004

2003

  • N. Sieber, T. Seyller, L. Ley, D. James, J. D. Riley, R. C. G. Leckey, and M. Polcik: Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated 6H-SiC{0001} surfaces. Physical Review B 67 (2003) 205304. (http://dx.doi.org/10.1103/PhysRevB.67.205304)
  • T. Seyller, N. Sieber, T. Stark, L. Ley, C. A. Zorman, and M. Mehregany: Stacking rearrangement at 6H-SiC(0001) surfaces during thermal hydrogenation. Surface Science 532 (2003) 698. (http://dx.doi.org/10.1016/s0039-6028(03)00157-2)
  • R. Graupner, J. Abraham, A. Vencelova, T. Seyller, F. Hennrich, M. M. Kappes, A. Hirsch, and L. Ley: Doping of single-walled carbon nanotube bundles by Bronsted acids. Physical Chemistry Chemical Physics 5 (2003) 5472. (http://dx.doi.org/10.1039/b311016h)
  • K. Y. Gao, T. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J. D. Riley, and R. G. C. Leckey: Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001). Applied Physics Letters 83 (2003) 1830. (http://dx.doi.org/10.1063/1.1609053)
  • M. Caragiu, T. Seyller, and R. D. Diehl: Adsorption geometry of Cu(110)-(12 x 2)-14Xe. Surface Science 539 (2003) 165. (http://dx.doi.org/10.1016/s0039-6028(03)00818-5)

2002

  • N. Sieber, T. Stark, T. Seyller, L. Ley, C. A. Zorman, and M. Mehregany: Origin of the split Si-H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation. Applied Physics Letters 80 (2002) 4726. (http://dx.doi.org/10.1063/1.1488692)
  • N. Sieber, T. Stark, T. Seyller, L. Ley, C. A. Zorman, and M. Mehregany: Origin of the split Si-H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation (vol 80, pg 4726, 2002). Applied Physics Letters 81 (2002) 1534. (http://dx.doi.org/10.1063/1.1502198)
  • N. Sieber, T. Seyller, L. Ley, M. Polcik, D. James, J. D. Riley, and R. C. G. Leckey: A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces. Materials Science Forum 389-3 (2002) 713. (http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.713)
  • N. Sieber, T. Seyller, R. Graupner, L. Ley, R. P. Mikalo, P. Hoffmann, D. Batchelor, and D. Schmeisser: Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED. Materials Science Forum 389-3 (2002) 717. (http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.717)
  • M. Caragiu, T. Seyller, and R. D. Diehl: Dynamical LEED study of Pd(111)-(root 3x root 3)R30 degrees-Xe. Physical Review B 66 (2002) 195411. (http://dx.doi.org/10.1103/PhysRevB.66.195411)

2001

  • N. Sieber, T. Seyller, B. F. Mantel, J. Ristein, and L. Ley: Preparation and characterization of hydrogen terminated 6H-SiC. Materials Science Forum 353-356 (2001) 223. (http://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.223)
  • N. Sieber, T. Seyller, R. Graupner, L. Ley, R. Mikalo, P. Hoffmann, D. R. Batchelor, and D. Schmeisser: PES and LEER study of hydrogen- and oxygen-terminated 6H-SiC(0001) and (0 0 0(1)over-bar) surfaces. Applied Surface Science 184 (2001) 278. (http://dx.doi.org/10.1016/s0169-4332(01)00508-6)
  • N. Sieber, B. F. Mantel, T. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, and D. Schmeisser: Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination. Applied Physics Letters 78 (2001) 1216. (http://dx.doi.org/10.1063/1.1351845)
  • N. Sieber, B. F. Mantel, T. Seyller, J. Ristein, and L. Ley: Hydrogenation of 6H-SiC as a surface passivation stable in air. Diamond and Related Materials 10 (2001) 1291. (http://dx.doi.org/10.1016/s0925-9635(00)00529-x)
  • P. X. Feng, J. D. Riley, R. C. G. Leckey, P. J. Pigram, T. Seyller, and L. Ley: Surface, interface and bulk properties of GaAs(111)B treated by Se layers. Journal of Physics D-Applied Physics 34 (2001) 678. (http://dx.doi.org/10.1088/0022-3727/34/5/303)
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