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Technische Physik
Technical Physics

Prof. Dr. Thomas Seyller

Technische Universität Chemnitz
Institut für Physik – Technische Physik
Reichenhainer Straße 70
09126 Chemnitz
Phone: +49-371-531-32898
FAX.: +49-371-531-832898
Publications

2016

153. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy
J.M. Wofford, F. Speck, T. Seyller, J.M.J. Lopes, and H. Riechert, J. Appl. Phys. 120 (2016) 45309.

152. Porous Ge@C materials via Twin polymerization of germanium(II) salicyl alcoholates for Li-ion batteries
P. Kitschke, M. Walter, T. Rüffer, A. Seifert, F. Speck, T. Seyller, S. Spange, H. Lang, A.A. Auer, M.V. Kovalenko, M. Mehring, J. Mater. Chem. A 4 (2016) 2705.

151. Terahertz ratchet effects in graphene with a lateral superlattice
P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, M.-H. Liu, L.E. Golub, E.L. Ivchenko, V.V. Popov, D.V. Fateev, K.V. Mashinsky, F. Fromm, T. Seyller, S.D. Ganichev, Phys. Rev. B 93 (2016) 075422.

150. Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide
R.J. Koch, S. Fryska, M. Ostler, M. Endlich, F. Speck, T. Hänsel, J.A. Schaefer, T. Seyller, Phys. Rev. Lett. 116 (2016) 106802.

2015

150. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
A.C. Ferrari, F. Bonaccorso, V. Fal’ko, K.S. Novoselov, S. Roche, P. Bøggild, S. Borini, F.H.L. Koppens, V. Palermo, N. Pugno, J.A. Garrido, R. Sordan, A. Bianco, L. Ballerini, M. Prato, E. Lidorikis, J. Kivioja, C. Marinelli, T. Ryhänen, A. Morpurgo, J.N. Coleman, V. Nicolosi, L. Colombo, A. Fert, M. Garcia-Hernandez, A. Bachtold, G.F. Schneider, F. Guinea, C. Dekker, M. Barbone, Z. Sun, C. Galiotis, A.N. Grigorenko, G. Konstantatos, A. Kis, M. Katsnelson, L. Vandersypen, A. Loiseau, V. Morandi, D. Neumaier, E. Treossi, V. Pellegrini, M. Polini, A. Tredicucci, G.M. Williams, B.H. Hong, J.-H. Ahn, J.M. Kim, H. Zirath, B.J. van Wees, H. van der Zant, L. Occhipinti, A.D. Matteo, I.A. Kinloch, T. Seyller, E. Quesnel, X. Feng, K. Teo, N. Rupesinghe, P. Hakonen, S.R.T. Neil, Q. Tannock, T. Löfwander, and J. Kinaret, Nanoscale 7 (2015) 4598.

149. Tunable Carrier Multiplication and Cooling in Graphene
J.C. Johannsen, S. Ulstrup, A. Crepaldi, F. Cilento, M. Zacchigna, J.A. Miwa, C. Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P.D.C. King, F. Parmigiani, M. Grioni, and P. Hofmann, Nano Lett. 15 (2015) 326.

148. Ramifications of optical pumping on the interpretation of time-resolved photoemission experiments on graphene
S. Ulstrup, J.C. Johannsen, F. Cilento, A. Crepaldi, J.A. Miwa, M. Zacchigna, C. Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P.D.C. King, F. Parmigiani, M. Grioni, and P. Hofmann, J. Electron Spectrosc. 200 (2015) 340.

147. Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy
S. Ulstrup, J.C. Johannsen, A. Crepaldi, F. Cilento, M. Zacchigna, Cephise Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, Fulvio Parmigiani, M. Grioni, and P. Hofmann, J. Phys.: Condens. Matter 27 (2015) 164206.

146. Atomic structure of Bi2Se3 and Bi2Te3 (111) surfaces probed by photoelectron diffraction and holography
M. V. Kuznetsov, L. V. Yashina, J. Sánchez-Barriga, I. I. Ogorodnikov, A. S. Vorokh, A. A. Volykhov, R. J. Koch, V. S. Neudachina, M. E. Tamm, A. P. Sirotina, A. Yu. Varykhalov, G. Springholz, G. Bauer, J. D. Riley, O. Rader, Phys. Rev. B, 91 (2015) 085402.

2014

145. Surface-Induced Hybridization between Graphene and Titanium
A. L. Hsu, R. J. Koch, M. T. Ong, W. Fang, M. Hofmann, K. K. Kim, Th. Seyller, M. S. Dresselhaus, E. J. Reed, J. Kong, T. Palacios, ACS Nano, 2014, 8 (8), pp 7704.

144. Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets
A. L. Walter, H. Sahin, K. Jeon, A. Bostwick, S. Horzum, R. Koch, F. Speck, M. Ostler, P. Nagel, M. Merz, S. Schupler, L. Moreschini, Y. J. Chang, Th. Seyller, F. M. Peeters, K. Horn, E. Rotenberg, ACS Nano. 2014 Aug 26;8(8):7801.

143. Ultrafast dynamics of massive dirac fermions in bilayer graphene
S. Ulstrup, J. C. Johannsen, F. Cilento, J. A. Miwa, A. Crepaldi, M. Zacchigna, C. Cacho, R. Chapman, E. Springate, S. Mammadov, F. Fromm, C. Raidel, Th. Seyller, F. Parmigiani, M. Grioni, P. D. C. King, Ph. Hofmann, Phys. Rev. Lett. 112 (2014) 257401.

142. Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
P. Wehrfritz, F. Fromm, S. Malzer, Th. Seyller, J. Phys. D: Appl. Phys. 47 (2014) 305103.

141. Experimental analysis of the thermal annealing of hard a-C:H films
S. Peter, M. Günther, O. Gordan, S. Berg, D.R.T. Zahn, Th. Seyller , Diamond and Related Materials 45 (2014), 43-57.

140. Development and character of gap states on alkali doping of molecular films
E. M. Reinisch, T. Ules, P. Puschnig, S. Berkebile, M. Ostler, Th. Seyller, M. G. Ramsey, G. Koller, New J. Phys. 16 (2014) 023011.

139. Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets
A. L. Walter, H. Sahin, K. Jeon, A. Bostwick, S. Horzum, R. Koch, F. Speck, M. Ostler, P. Nagel, M. Merz, S. Schupler, L. Moreschini, Y. J. Chang, T. Seyller, F. M. Peeters, K. Horn, E. Rotenberg, ACS Nano. 2014 Aug 26;8(8):7801-8.

138. Ultrafast dynamics of massive dirac fermions in bilayer graphene
S. Ulstrup, J. C. Johannsen, F. Cilento, J. A. Miwa, A. Crepaldi, M. Zacchigna, C. Cacho, R. Chapman, E. Springate, S. Mammadov, F. Fromm, C. Raidel, Th. Seyller, F. Parmigiani, M. Grioni, P. D. C. King, Ph. Hofmann, Phys. Rev. Lett. 112 (2014) 257401.

137. Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
P. Wehrfritz, F. Fromm, S. Malzer, T. Seyller, J. Phys. D: Appl. Phys. 47 (2014) 305103.

136. Experimental analysis of the thermal annealing of hard a-C:H films
S. Peter, M. Günther, O. Gordan, S. Berg, D.R.T. Zahn, Th. Seyller , Diamond and Related Materials 45 (2014), 43-57.

135. Development and character of gap states on alkali doping of molecular films
E. M. Reinisch, T. Ules, P. Puschnig, S. Berkebile, M. Ostler, Th. Seyller, M. G. Ramsey, G. Koller, New J. Phys. 16  (2014) 023011.

134. Buffer layer free graphene on SiC(0 0 0 1) via interface oxidation in water vapor
M. Ostler, F. Fromm, R. J. Koch, P. Wehrfritz, F. Speck, H. Vita, S. Böttcher, K. Horn, Th. Seyller, Carbon 70 (2014), 258.

2013

133. Strong Plasmon Reflection at Nanometer-Size Gaps in Monolayer Graphene on SiC
J. Chen, M. L. Nesterov, A. Y. Nikitin, S. Thongrattanasiri, P. Alonso-González, T. M. Slipchenko, F. Speck, M. Ostler, Th. Seyller, I. Crassee, F. H. L. Koppens, L. Martin-Moreno, F. J. García de Abajo, A. B. Kuzmenko, R. Hillenbrand, Nano Lett. 13 (2013) 6210.

132. Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitax
T. Schumann, M. Dubslaff, M. H. Oliveira Jr., M. Hanke, F. Fromm, Th. Seyller, L. Nemec, V. Blum, M. Scheffler, J. M. J. Lopes, H. Riechert, New J. Phys. 15  (2013) 123034.

131. Observation of 4 nm Pitch Stripe Domains Formed by Exposing Graphene to Ambient Air
D. S. Wastl, F. Speck, E. Wutscher, M. Ostler, Th. Seyller, F. J. Giessibl, ACS Nano 7 (2013) 10032.

130. Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate
F. Fromm, P. Wehrfritz, M. Hundhausen, Th. Seyller, New J. Phys. 15  (2013) 113006.

129. Fabry-Perot enhanced Faraday rotation in graphene
N. Ubrig, I. Crassee, J. Levallois, I. O. Nedoliuk, F. Fromm, M. Kaiser, Th. Seyller, A. B. Kuzmenko, Opt. Express 21 (2013) 24736.

128. Spin-resolved photoemission and ab initio theory of graphene/SiC
D. Marchenko, A. Varykhalov, M. R. Scholz, J. Sánchez-Barriga, O. Rader, A. Rybkina, A. M. Shikin, Th. Seyller, G. Bihlmayer, Phys. Rev. B. 88 (2013) 075422.

127. Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene
K. S. Kim, A. L. Walter, L. Moreschini, Th. Seyller, K. Horn, E. Rotenberg,  A. Bostwickann, Nature Materials 12 (2013) 887.

126. Direct View of Hot Carrier Dynamics in Graphene
J. C. Johannsen, Søren Ulstrup, Federico Cilento, Alberto Crepaldi, Michele Zacchigna, Cephise Cacho, I. C. Edmond Turcu, Emma Springate, Felix Fromm, Christian Raidel, Th. Seyller, Fulvio Parmigiani, Marco Grioni, P. Hofmann, Phys. Rev. Lett. 111 (2013) 027403.

125. Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surface
M. Ostler, I. Deretzis, S. Mammadov, F. Giannazzo, G. Nicotra, C. Spinella, Th. Seyller, A. La Magna, Phys. Rev. B 88 (2013) 085408.

124. Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48
A. Tadich, M. T. Edmonds, L. Ley, F. Fromm, Y. Smets, Z. Mazej, J. Riley, C. I. Pakes, Th. Seyller, M. Wanke, Appl. Phys. Lett. 102 (2013), 241601.

123. Robust Graphene Membranes in a Silicon Carbide Frame
D. Waldmann, B. Butz, S. Bauer, J. M. Englert, J. Jobst, K Ullmann, F. Fromm, M. Ammon, M. Enzelberger, A. Hirsch, S. Maier, P. Schmuki, Th. Seyller, E. Spiecker, H. B. Weber, ACS Nano 7 (2013) 4441.

122. Growth and electronic structure of boron-doped graphene
J. Gebhardt, R. J. Koch, W. Zhao, O. Höfert, K. Gotterbarm, S. Mammadov, C. Papp, A. Görling, H.-P. Steinrück, Th. Seyller, Phys. Rev. B. 87 (2013) 155437.

121. Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
F. Fromm, M. H. Oliveira Jr., A. Molina-Sánchez, M. Hundhausen, J. M. J. Lopes, H. Riechert, L. Wirtz, T. Seyller, New J. Phys. 15  (2013) 043031.

120. Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy
M. H. Oliveira Jr., T. Schumann, R. Gargallo-Caballero, F. Fromm, T. Seyller, M. Ramsteiner, A. Trampert, L. Geelhaar, J. M. J. Lopes, H. Riechert, Carbon 56 (2013) 339.

119. Friction and atomic-layer-scale wear of graphitic lubricants on SiC(0001) in dry sliding
F. Wählisch, J. Hoth, C. Held, Th. Seyller, R. Bennewitz, Wear 300  (2013) 78.

118. Electron–phonon coupling in quasi-free-standing graphene
J.C. Johannsen, S. Ulstrup, M. Bianchi, R. Hatch, D. Guan, F. Mazzola, L. Hornekær, F. Fromm, C. Raidel, T. Seyller, P. Hofmann, J. Phys.: Condens. Matter 25 (2013) 094001.

117. Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC, B. Birkner, D. Pachniowski, A. Sandner, M. Ostler, T. Seyller, J. Fabian, M. Ciorga, D. Weiss, J. Eroms.
Phys. Rev. B (2013) 981405(R)

116. Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
A.L. Walter, A. Bostwick, F. Speck, M. Ostler, K.S. Kim, Y.J. Chang, L. Moreschini, D. Innocenti, Th. Seyller, K. Horn, E. Rotenberg, New J. Phys. 15 (2013) 023019.

115. Localized States Influence Spin Transport in Epitaxial Graphene
T. Maassen, J.J. van den Berg, E.H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, B.J. van Wees, Phys. Rev. Lett. 102 (2013) 067209.

114. Formation of high-quality quasi-free standing bilayer graphene by oxygen intercalation upon annealing in air
M. H. Oliveira Jr., T. Schumann, F. Fromm, R. Koch, M. Ostler, M. Ramsteiner, T. Seyller, J. M. J. Lopes, H. Riechert, Carbon 52 (2013) 83.

113. Detecting the local transport properties of epitaxial graphene by a multiprobe approach
L. Barreto, E. Perkins, J. Johannsen, S. Ulstrup, F. Fromm, C. Raidel, T. Seyller, P. Hofmann, Appl Phys. Lett. 102 (2013) 033110.

112. Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
K.S. Kim, T.-H. Kim, A.L. Walter, Th. Seyller, H.W. Yeom, E. Rotenberg, A. Bostwick, Phys. Rev. Lett. 110 (2013) 036804.

111. On the Way to Graphane - Pronounced Fluorescence of Polyhydrogenated Graphene
R.A. Schäfer, J.M. Englert, P. Wehrfritz, W. Bauer, F. Hauke, Th. Seyller, A. Hirsch, Angew. Chemie. Internat. Ed. 52 (2013) 754.

2012

110. Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions, C. Bock, S. Weingart, E. Karaissaridis, U. Kunze, F. Speck, Th. Seyller.
Nanotechnology 23 (2012) 395203

109. Classical to quantum crossover of the cyclotron resonance in graphene: a study of the strength of intraband absorption
M. Orlita, I. Crassee, C. Faugeras, A. B. Kuzmenko, F. Fromm, M. Ostler, Th. Seyller, G. Martinez, M Polini, M. Potemski, New J. Phys. 14 (2012) 095008.

108. Growth and electronic structure of nitrogen-doped graphene on Ni(111)
R.J. Koch, M. Weser, W. Zhao, F. Vines, K. Gotterbarm, S.M. Kozlov, O. Höfert, M. Ostler, C. Papp, J. Gebhardt, H.-P. Steinrück, A. Gorling, Th. Seyller, Phys. Rev. B 86 (2012) 075401.

107. Precise control of epitaxy of graphene by microfabricating SiC substrate
H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M. Suemitsu, Appl. Phys. Lett. 101 (2012) 041605.

106. Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
J. Ristein, S. Mammadov, Th. Seyller, Phys. Rev. Lett. 108 (2012) 246104.

105. Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene
I. Crassee, M. Orlita, M. Potemski, A.L. Walter, M. Ostler, T. Seyller, I. Gaponenko, J. Chen, A.B. Kuzmenko, Nano Lett. 12 (2012) 2470.

104. Implanted bottom gate for epitaxial graphene on silicon carbide
D. Waldmann, J. Jobst, F. Fromm, F. Speck, T. Seyller, M. Krieger, H.B. Weber, J. Phys. D - Appl. Phys. 45 (2012) 154006.

103. Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
T. Maassen, J. J. van den Berg, N. Ijbema, F. Fromm, Th. Seyller, R. Yakimova, B. J. van Wees, Nano Letters 12 (2012) 1498.

102. Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
C. Held, Th. Seyller, R. Bennewitz, Beilstein Journal of Nanotechnology 3 (2012) 179.

2011

101. Terahertz radiation driven chiral edge currents in graphene
J. Karch, C. Drexler, P. Ulbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S.A. Tarasenko, E.L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S.D. Ganichev, Phys. Rev. Lett. 107 (2011) 276601.

100. The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H.B. Weber, Th. Seyller, Appl. Phys. Lett. 99 (2011) 122106.

99. Effective screening and the plasmaron bands in graphene
A.L. Walter, A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y.J. Chang, M. Pulini, R. Asgari, A.H. MacDonald, K. Horn, E. Rotenberg, Phys. Rev. B 84 (2011) 085410.

98. High-Transconductance Graphene Sulution-Gated Field Effect Transistors
L.H. Hess, M.V. Hauf, M. Seifert, M. Stutzmann, I.D. Sharp, J.A. Garrido, F. Speck, Th. Seyller, Appl. Phys. Lett. 99 (2011) 033503.

97. Multi-component magneto-optical conductivity of multilayer graphene on SiC
I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, Th. Seyller, A. B. Kuzmenko, Phys. Rev. B 84, (2011) 035103.

96. Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, T. Seyller, H.B. Weber, Solid State Comm. 151 (2011) 1061.

95. Highly p-doped graphene obtained by fluorine intercalation
A.L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y.S. Kim, Y.J. Chang, K. Horn, E. Rotenberg, Appl. Phys. Lett. 98 (2011) 184102.

94. Bottom gated epitaxial graphene
D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M .Krieger, H.B. Weber, Nature Materials 10 (2011) 357.

93. The interaction of Xe and Xe plus K with graphene
A. Bostwick, J.L. McChesney, T. Ohta, K.V. Emtsev, Th. Seyller, K. Horn, E. Rotenberg, J. Electron. Spectrosc. Relat. Phenom. 183 (2011) 118.

92. A momentum space view o f the surface chemical bond
S. Berkebile, T. Ules, P. Puschnig, L. Romaner, G. Kuller, A.J. Fleming, K. Emtsev, Th. Seyller, C. Ambrosch-Draxl, F.P. Netzer, M.G. Ramsey, Phys. Chem. Chem. Phys. 13 (2011) 3604.

91. Giant Faraday rotation in single- and multilayer grapheneI.
Crassee, J. Levallois, A.L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, Th. Seyller, D. van der Marel, A.B. Kuzmenko, Nature Physics 7 (2010) 48.

2011

101. Terahertz radiation driven chiral edge currents in graphene
J. Karch, C. Drexler, P. Ulbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S.A. Tarasenko, E.L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S.D. Ganichev, Phys. Rev. Lett. 107 (2011) 276601.

100. The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H.B. Weber, Th. Seyller, Appl. Phys. Lett. 99 (2011) 122106.

99. Effective screening and the plasmaron bands in graphene
A.L. Walter, A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y.J. Chang, M. Pulini, R. Asgari, A.H. MacDonald, K. Horn, E. Rotenberg, Phys. Rev. B 84 (2011) 085410.

98. High-Transconductance Graphene Sulution-Gated Field Effect Transistors
L.H. Hess, M.V. Hauf, M. Seifert, M. Stutzmann, I.D. Sharp, J.A. Garrido, F. Speck, Th. Seyller, Appl. Phys. Lett. 99 (2011) 033503.

97. Multi-component magneto-optical conductivity of multilayer graphene on SiC
I. Crassee, J. Levallois, D. van der Marel, A. L. Walter, Th. Seyller, A. B. Kuzmenko, Phys. Rev. B 84, (2011) 035103.

96. Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, T. Seyller, H.B. Weber, Solid State Comm. 151 (2011) 1061.

95. Highly p-doped graphene obtained by fluorine intercalation
A.L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y.S. Kim, Y.J. Chang, K. Horn, E. Rotenberg, Appl. Phys. Lett. 98 (2011) 184102.

94. Bottom gated epitaxial graphene
D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M .Krieger, H.B. Weber, Nature Materials 10 (2011) 357.

93. The interaction of Xe and Xe plus K with graphene
A. Bostwick, J.L. McChesney, T. Ohta, K.V. Emtsev, Th. Seyller, K. Horn, E. Rotenberg, J. Electron. Spectrosc. Relat. Phenom. 183 (2011) 118.

92. A momentum space view o f the surface chemical bond
S. Berkebile, T. Ules, P. Puschnig, L. Romaner, G. Kuller, A.J. Fleming, K. Emtsev, Th. Seyller, C. Ambrosch-Draxl, F.P. Netzer, M.G. Ramsey, Phys. Chem. Chem. Phys. 13 (2011) 3604.

91. Giant Faraday rotation in single- and multilayer grapheneI.
Crassee, J. Levallois, A.L. Walter, M. Ostler, A. Bostwick, E. Rotenberg, Th. Seyller, D. van der Marel, A.B. Kuzmenko, Nature Physics 7 (2010) 48.

2010

90. Phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem
R.J. Koch, Th. Seyller, J.A. Schaefer, Phys. Rev. B 82 (2010) 201413(R).

89. Automated preparation of high quality epitaxial graphene on 6H–SiC(0001)
M. Ostler, F. Speck, M. Gick, Th. Seyller, Phys. Stat. Sul. B 247 (2010) 2924.

88. The interaction of quasi-particles in graphene with chemical dopants
A. Bostwick, T. Ohta, J.L. McChesney, K.V. Emtsev, F. Speck, Th. Seyller, K. Horn, S.D. Kevan, E. Rotenberg, New J. Phys. 12 (2010) 125014.

87. Characteristics of sulution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
J. Ristein, W. Zhang, F. Speck, M. Ostler, L.Ley, Th. Seyller, J. Phys. D: Appl. Phys. 43 (2010) 345303.

86. Observation of Plasmarons in Quasi-Free-Standing Doped Graphene
A. Bostwick, F. Speck, Th. Seyller, K. Horn, M. Pulini, R. Asgari, A. H. MacDonald, E. Rotenberg, Science 328 (2010) 999.

85. Quantum oscillations and quantum Hall effect in epitaxial graphene
J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. K. Maude, Th. Seyller, H. B. Weber, Phys. Rev. B 81 (2010) 195434.

84. Extended van Hove Singularity and Superconducting Instability in Doped Graphene
J. L. McChesney, A. Bostwick, T. Ohta, Th. Seyller, K. Horn, J. González, and E. Rotenberg, Phys. Rev. Lett. 104 (201) 136803.

83. Epitaxial graphenes on silicon carbide
P.N. First, W.A. de Heer, Th. Seyller, C. Berger, J.A. Stroscio, J.S. Moon, MRS Bulletin 35 (2010) 296.

82. Quasi-freestanding graphene on SiC(0001)
F. Speck, M. Ostler, J. Röhrl, J. Jobst, D. Waldmann, M. Hundhausen, L. Ley, H.B. Weber, Th. Seyller, Mater. Sci. Forum, 645-648 (2010) 629.

81. Transport properties of single-layer epitaxial graphene on 6H-SiC (0001)
J. Jobst, D. Waldmann, K.V. Emtsev, Th. Seyller, H.B. Weber, Mater. Sci. Forum, 645-648 (2010) 637.

80. Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
J. Röhrl, M. Hundhausen, F. Speck, Th. Seyller, Mater. Sci. Forum 645-648 (2010) 603.

79. Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
F. Speck, M. Ostler, J. Röhrl, K. V. Emtsev, M. Hundhausen, L. Ley, Th. Seyller, Phys. Stat. Sol. C 7 (2010) 398.

78. Influence of the growth conditions ofepitaxial graphene on the film topography and the electron transport properties
S. Weingart, C. Bock, U. Kunze, K.V. Emtsev, Th. Seyller, L. Ley, Physica E: Low-dimensional Systems and Nanostructures 42 (2010) 687.

2009

77. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
S. Weingart, C. Bock, U. Kunze, F. Speck, Th. Seyller, L. Ley, Appl. Phys. Lett. 95 (2009) 262101

76. Experimental studies of the electronic structure of graphene
A. Bostwick, J. McChesney, T. Ohta, E. Rotenberg, Th. Seyller, K. Horn, Progr. Surf. Sci. 84 (2009) 380.

75. The electronic structure of pentacene revisited
S. Berkebile, G. Kuller, A.J. Fleming, P Puschnig, C. Ambrosch-Draxl, K. Emtsev, Th. Seyller, J. Riley, M.G. Ramsey, J. Electron. Spectrosc. Relat. Phenom. 174 (2009) 22

74. Reconstruction of Mulecular Orbital Densities from Photoemission Data
P. Puschnig, S. Berkebile, A. J. Fleming, G. Kuller, K. V. Emtsev, Th. Seyller, J. D. Riley, C. Ambrosch-Draxl, F. P. Netzer, M. G. Ramsey, Science 326 (2009) 702

73. Quasiparticle Transformation during a Metal-Insulator Transition in Graphene
A. Bostwick, J. L. McChesney, K. V. Emtsev, Th. Seyller, K. Horn, S. D. Kevan, E. Rotenberg, Phys. Rev. Lett. 103 (2009) 056404

72. Photoemission of Ga1-xMnxAs with high Curie temperature and transformation into MnAs of zincblende structure
O. Rader, S. Valencia, W. Gudat, K.W. Edmonds, R.P. Campion, B.L. Gallagher, C.T. Foxon, K.V. Emtsev, Th. Seyller, Phys. Stat. Sul. B 246 (2009) 1435

71. Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene
J.A. Robinson, C.P. Puls, N.E. Staley, J.P. Stitt, M.A. Fanton, K.V. Emtsev, Th. Seyller, Y. Liu, Nano Lett. 9 (2009) 964.

70. Friction and dissipation in epitaxial graphene films
T. Filleter, J.L. McChesney, A. Bostwick, E. Rotenberg, K.V. Emtsev, Th. Seyller, K. Horn, R. Bennewitz, Phys. Rev. Lett. 102 (2009) 086102.

69. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber, Th. Seyller, Nature Materials 8 (2009) 203.

2008

68. Local work function measurements of epitaxial graphene
T. Filleter, K.V. Emtsev, Th. Seyller, R. Bennewitz, Appl. Phys. Lett. 93 (2008) 133117.

67. Morphology and electronic properties of metal organic mulecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)
S. Andres, C. Pettenkofer, F. Speck, Th. Seyller, J. Appl. Phys. 103 (2008) 103720.

66. Raman spectra of epitaxial Graphene on SiC(0001)
J. Röhrl, M. Hundhausen, K.V. Emtsev, Th. Seyller, R. Graupner, and L. Ley, Appl. Phys. Lett. 92 (2008) 201918.

65. Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy
P. Lauffer, K. V. Emtsev, R. Graupner, Th. Seyller, L. Ley, Phys. Stat. Sul. B 245 (2008) 2064.

64. Plasmon dispersion and damping in electrically-isulated two-dimensional charge sheets
Y. Liu, R.F. Willis, K.V. Emtsev, Th. Seyller, Phys. Rev. B 78 (2008) 201403(R).

63. Epitaxial Graphene: A new Material
Th. Seyller, A. Bostwick, K.V. Emtsev, K. Horn, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg, F. Speck, Phys. Stat. Sul. B 245 (2008) 1436.

62. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
S.A. Reshanov, K.V. Emtsev, F. Speck, K.-Y. Gao, Th. Seyller, G. Pensl, L. Ley, Phys. Stat. Sul. B 245 (2008) 1369.

61. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
G. Pensl, S. Beljakowa, T. Frank, K.-Y. Gao, F. Speck, Th. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, S. Shamuilia, T. Kimoto, A. Schöner, Phys. Stat. Sul. B 245 (2008) 1378.

60. Graphene layers on silicon carbide studied by Raman spectroscopy
J. Röhrl, M. Hundhausen, K.V. Emtsev, Th. Seyller, and L. Ley, Mater. Sci. Forum 600-603 (2008) 567.

59. Morphology of graphene thin film growth on SiC(0001)
T. Ohta, F. El Gabaly, A. Bostwick, J.L. McChesney, K.V. Emtsev, A.K. Schmid, Th. Seyller, K. Horn, E. Rotenberg, New. J. Phys. 10 (2008) 023034.

58. Atomic and electronic structure of few layer graphene on SiC(0001) studied by STM and STS
P. Lauffer, K.V. Emtsev, R. Graupner, Th. Seyller, L. Ley, S. A. Reshanov, H. B. Weber, Phys. Rev. B 77 (2008) 155426.

57. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces
K.V. Emtsev, F. Speck, Th. Seyller, J.Riley, L. Ley, Phys. Rev. B 77 (2008) 155303.

56. Photoemission studies of graphene on SiC: growth, interface, and electronic structure
A. Bostwick, K.V. Emtsev, K. Horn, E. Huwald, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg, F. Speck, Th. Seyller, Advances in Sulid State Physics 47 (2008) 159.

55. Origin of the energy bandgap in epitaxial graphene
E. Rotenberg, A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, Nature Materials 7 (2008) 258.

2007

54. Symmetry Breaking in Few Layer Graphene Films
A. Bostwick, T. Ohta, J. L. McChesney, K.V. Emtsev, Th. Seyller, K. Horn, E. Rotenberg, New J. Phys. 9 (2007) 385.

53. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon
K.Y. Gao, F. Speck, K.V. Emtsev, Th. Seyller, L. Ley, J. Appl. Phys. 102 (2007) 094503.

52. Band structure and many body effects in graphene
A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, The European Physical Journal - Special Topics 148 (2007) 5.

51. Renormalization of graphene bands by many-body interactions
A. Bostwick, T. Ohta, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, Sulid State Communications 143 (2007) 63.

50. Interlayer interaction and electronic screening in multilayer graphene
T. Ohta, A. Bostwick, J.L. McChesney, Th. Seyller, K. Horn, E. Rotenberg, Phys. Rev. Lett. 98 (2007) 206802.

49. Quantum Size Effects in quasi freestanding Pb layers
J.H. Dil, T.U. Kampen, B. Hülsen, Th. Seyller, K. Horn, Phys. Rev. B 75 (2007) 161401(R).

48. 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3.
S. Beljakowa, T. Frank, G. Pensl, K.-Y. Gao, F. Speck, Th. Seyller, Mater. Sci. Forum 556-557 (2007) 627.

47. Initial stages of the graphite-SiC(0001) interface formation studied by photoelectron spectroscopy
K.V. Emtsev, Th. Seyller, F. Speck, L. Ley, P. Stojanov, J.D. Riley, R.G.C. Leckey, Mater. Sci. Forum 556-557 (2007) 525.

46. Electronic structure of graphite/6H-SiC interfaces
Th. Seyller, K.V. Emtsev, F. Speck, K.-Y. Gao, L. Ley, Mater. Sci. Forum 556-557 (2007) 701.

45. Quasiparticle Dynamics in Graphene
A. Bostwick, T. Ohta, Th. Seyller, K. Horn, E. Rotenberg, Nature Physics 3 (2007) 36.

2006

44. Controlling the Electronic Structure of Bilayer Graphene
T. Ohta, A. Bostwick, Th. Seyller, K. Horn, E. Rotenberg, Science 313 (2006) 951.

43. Electronic Properties of SiC Surfaces and Interfaces: Some Fundamental and Technological Aspects
Th. Seyller, Appl. Phys. A 85 (2006) 376.

42. The interface of atomic layer deposited Al2O3 on silicon
K.-Y. Gao, F. Speck, K.V. Emtsev, Th. Seyller, L. Ley, M. Oswald, W. Hansch, Phys. Stat. Sul. (A) 203 (2006) 2194.

41. How the sulid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account
K.-Y. Gao, Th. Seyller, L. Ley, Sulid. State. Comm., 139 (2006) 370.

40. Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
Th. Seyller, K.V. Emtsev, F. Speck, K.-Y. Gao, L. Ley, Appl. Phys. Lett. 88 (2006) 242103.

39. Structural and electronic properties of graphite layers grown on SiC(0001)
Th. Seyller, K.V. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, O. Rader, A. Varykhalov, A.M. Shikin, Surf. Sci. 600 (2006) 3906.

38. Electronic properties of clean unreconstructed 6H-SiC{0001} surfaces studied by angle resulved photoelectron spectroscopy
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, M. Preuss, Surf. Sci. 600 (2006) 3845.

37. Correlation effects at the ideal SiC{0001}-(1×1) surfaces
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, M. Preuss, Phys. Rev. B 73 (2006) 075412.

2005

36. Hydrogen terminated 4H-SiC(11-20) and (1-100) surfaces studied by synchrotron x-ray photoelectron spectroscopy
Th. Seyller, R. Graupner, N. Sieber, K.V. Emtsev, L. Ley, A. Tadich, J.D. Riley, R.C.G. Leckey, Phys. Rev. B 71 (2005) 245333.

35. Surface band structure studies of Si-rich reconstructions on 4H-SiC(1-100)
K.V. Emtsev, Th. Seyller, L. Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 483-485 (2005) 547.

34. ALD deposited Al2O3 on 6H-SiC(0001) under Annealing in Hydrogen Atmosphere
K.-Y. Gao, K.V. Emtsev, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, Mater. Sci. Forum 483-485 (2005) 559.

33. Hydrogen-saturated SiC-surfaces: model systems for studies of passivation, reconstruction, and interface formation
Th. Seyller, Mater. Sci. Forum 483-485 (2005) 535.

32. Mapping Disorder-Order Induced Changes To The Fermi Surface Of Cu3Au Using A New Toroidal Electron Energy Analyser
A. Tadich, L. Broekman, J. Riley, R. Leckey, Th. Seyller, K.V. Emtsev, L. Ley, J. Electron. Spectrosc. Relat. Phenom. 144-147 (2005) 515.

30. First results from a second generation toroidal electron spectrometer
L. Broekman, A. Tadich, E. Huwald, J. Riley, R. Leckey, Th. Seyller, K.V. Emtsev, L. Ley, J. Electron. Spectrosc. Relat. Phenom. 144-147 (2005) 1001.

2004

29. The Adsorption Sites of Rare Gases on Metallic Surfaces: A Review
R. D. Diehl, Th. Seyller, M. Caragiu, G. S. Leatherman, N. Ferralis, K. Pussi, P. Kaukasoina, M. Lindroos, J. Phys.: Cond. Matter. 16 (2004) S2839.

28. Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition
Th. Seyller, K. Gao, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 457-460 (2004) 1369.

27. Initial stages of thermal oxidation of 4H-SiC() studied by photoelectron spectroscopy
Th. Seyller, K.V. Emtsev, R. Graupner, L. Ley, Mater. Sci. Forum 457-460 (2004) 1317.

26. The atomic structure of hydrogen saturated a-planes of 4H-SiC
Th. Seyller, N. Sieber, K.V. Emtsev, R. Graupner, L. Ley, A. Tadich, D. James, J.D. Riley, R.C.G. Leckey, M. Pulcik, Mater. Sci. Forum 457-460 (2004) 395.

25. Passivation of Hexagonal SiC Surfaces by Hydrogen Termination
Th. Seyller, J. Phys.: Cond. Matter. 16 (2004) S1755.

2003

24. Doping of single-walled carbon nanotube bundles by Brønsted acids
R. Graupner, J. Abraham, A. Vencelova, Th. Seyller, F. Hennrich, M. M. Kappes,A. Hirsch, L. Ley, Phys. Chem. Chem. Phys. 5 (2003) 5472.

23. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
K.Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J.D. Riley, R.C.G. Leckey, Appl. Phys. Lett. 83 (2003) 1830.

22. Adsorption Geometry of Cu(110)-(2x12)-14Xe
M. Caragiu, Th. Seyller, R.D. Diehl, Surf. Sci. 539 (2003) 165.

21. Synchrotron x-ray photoelectron spectroscopy study of hydrogen terminated 6H-SiC{0001} surfaces
N. Sieber, Th. Seyller, L. Ley, M. Pulcik, D. James, J. Riley, R. Leckey, Phys. Rev. B 67 (2003) 205304.

20. Stacking Rearrangement at 6H-SiC(0001) Surfaces during Thermal Hydrogenation
Th. Seyller, N. Sieber, T. Stark, L. Ley, C.A. Zorman, M. Mehregany, Surf. Sci. 532-535 (2003) 698.

2002

19. Dynamical LEED study of Pd(111)-(√3x√3)R30°-Xe
M. Caragiu, Th. Seyller, R. D. Diehl, Phys. Rev. B 66 (2002) 195411.

18. Origin of the split Si-H stretch mode on hydrogenated 6H-SiC(0001): Titration of crystal truncation
N. Sieber, T. Stark, Th. Seyller, L. Ley, C.A. Zorman, Appl. Phys. Lett. 80 (2002) 4726, and Appl. Phys. Lett. 81 (2002) 1534.

17. A high resulution photoemission study of hydrogen terminated 6H-SiC surfaces
N. Sieber, Th. Seyller, L. Ley, M. Pulcik, D. James, J.D. Riley, R.C.G. Leckey, Mater. Sci. Forum 389-393 (2002) 713.

16. Wet-chemical preparation of silicate adlayer terminated SiC(0001) surfaces studied by PES and LEED
N. Sieber, Th. Seyller, R. Graupner, L. Ley, R. Mikalo, P. Hoffmann, D. Batchelor, D. Schmeißer, Mater. Sci. Forum 389-393 (2002) 717.

2001

15. PES and LEED Study of Hydrogen and Oxygen terminated 6H-SiC(0001) and (000-1) Surfaces
N. Sieber, Th. Seyller, R. Graupner, L. Ley, R. Mikalo, P. Hoffmann, D.R. Batchelor, D. Schmeißer, Appl. Surf. Sci. 184 (2001) 280.

14. Hydrogenation of 6H-SiC as a surface passivation stable in air
N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, Diam. Relat. Mater. 10 (2001) 1291.

13. Preparation and characterization of hydrogen terminated 6H-SiC
N. Sieber, Th. Seyller, B. F. Mantel, J. Ristein, L. Ley, Mater. Sci. Forum 353-356 (2001) 223.

12. Surface, interface and bulk properties of GaAs(111)B treated by Se layers
P. X. Feng, J. D. Riley, R. C. G. Leckey, P. J. Pigram, Th. Seyller, L. Ley, J. Phys. D 34 (2001) 678.

11. Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs(001)
P. Feng, F. Gard, J. D. Riley, P. J. Pigram, R. Leckey, Th. Seyller, L. Ley, J. Electron Spectrosc. Relat. Phenom. 114 (2001) 527.

10. The adsorption geometry of Ag(111)-(√7x√7)R19.1°-4Ar studied by LEED
M. Caragiu, G. S. Leatherman, Th. Seyller, R. D. Diehl, Surf. Sci. 475 (2001) 89.

9. Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, D. Schmeißer, Appl. Phys. Lett. 78 (2001) 1216.

2000

8. Low-energy electron diffraction study of krypton on Cu(110)
Th. Seyller, M. Caragiu, R. D. Diehl, Surf. Sci. 454 (2000) 55.

1999

7. LEED and STM study of Cs on Cu(211)
M. Caragiu, Th. Seyller, R. D. Diehl, A. G. Norris, R. McGrath, C. A. Muryn, Surf. Rev. Lett. 6 (1999) 865.

6. Dynamical LEED study of Pt(111)-(√3x√3)R30°-Xe
Th. Seyller, M. Caragiu, R. D. Diehl, P. Kaukasoina, and M. Lindroos, Phys. Rev. B 60 (1999) 11084.

5. Low-energy electron diffraction study of the multilayer relaxation of Cu(211)
Th. Seyller, R. D. Diehl, and F. Jona, J. Vac. Sci. Technul. A 17 (1999) 1635.

4. Characterization of K and Cs adsorption on Fe(110)
Th. Seyller, R. Haseneder, E. Reinhart, D. Borgmann, G. Wedler, Surf. Sci. 424 (1999) 278.

1998

3. Observation of top-site adsorption for Xe on Cu(111)
Th. Seyller, M. Caragiu, R. D. Diehl, P. Kaukasoina, M. Lindroos, Chem. Phys. Lett. 291 (1998) 567.

2. CO as adsorbate and reaction product in the systems Fe(110)/Cs+CO and Fe(110)/Cs+CO2
Th. Seyller, K. Rührnschopf, D. Borgmann, and G. Wedler, Surf. Rev. Lett 5 (1998) 569.

1. Interaction of CO2 with Cs-promoted Fe(110) as compared to Fe(110)/K+CO2
Th. Seyller, D. Borgmann, and G. Wedler, Surf. Sci. 400 (1998) 63.