| Nr. |
Title |
Authors |
Year |
| 1 |
Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators |
Ge, Xinglai et al. |
2026 |
| 2 |
Determination of the Lower Dead Time Threshold for the Onset of Bipolar Degradation in SiC MOSFETs |
Herrmann, C.* et al. |
2026 |
| 3 |
Impact of Package Degradation on Short-Circuit Robustness and Temperature Stability during Application-Close Repetitive Switching of IGBTs |
Bäumler, Christian |
2026 |
| 4 |
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations |
Mysore, Madhu Lakshman* et al. |
2026 |
| 5 |
Influence of Interface Traps and Cell Design on Dynamic VSD Behaviour in Double-Trench SiC MOSFETs |
Mysore, Madhu Lakshman et al. |
2026 |
| 6 |
Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes |
Heimler, Patrick* et al. |
2026 |
| 7 |
On the Reverse Recovery of SiC MOSFET Inverse Diodes |
Lutz, Josef* et al. |
2026 |
| 8 |
Reliability of Wide Bandgap Semiconductors for Automotive Applications |
Kaminski, Nando* et al. |
2026 |
| 9 |
SiC MOSFETs in Parallel Switching for MW Inverter Applications |
Ye, Yijun et al. |
2026 |
| 10 |
Three-Level Gate Driver for Slew Rate Control in Reliability-OrientedVoltage Switching Tests |
Dash, Sarthank Swaroop et al. |
2026 |
| 11 |
Towards Understanding the Fast Degradation of the On-State Resistance in LDMOS Devices |
Prigann, Sven et al. |
2026 |
| 12 |
Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test |
Mysore, Madhu Lakshman* et al. |
2026 |
| 13 |
Vorrichtung und Verfahren zur Kühlung von Komponenten |
Gürlek, Yavuz et al. |
2026 |
| 14 |
A Comprehensive Study on the Gate Switching Instability of 1.2 kV SiC MOSFETs Considering Application Relevant Conditions |
Thiele, Sven et al. |
2025 |
| 15 |
A Novel Test Method for Bipolar Degradation under Short Dead Times |
Herrmann, Clemens et al. |
2025 |
| 16 |
Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime |
Hein, Lukas* et al. |
2025 |
| 17 |
Analysis of Aged Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 18 |
Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 19 |
Dead Time Dependency of Bipolar Degradation in SiC MOSFETs |
Herrmann, Clemens et al. |
2025 |
| 20 |
Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates |
Alaluss, Mohamed* et al. |
2025 |
