| Nr. |
Title |
Authors |
Year |
| 1 |
3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class |
Alaluss, Mohamed* et al. |
2024 |
| 2 |
A Similarity-Based Robust Open-Circuit Fault Diagnosis Method for Dual Pulse Rectifiers |
Deng, Qingli et al. |
2024 |
| 3 |
A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects |
Wang, Huimin et al. |
2024 |
| 4 |
Active Short-Circuit Investigation of SiC MOSFETs |
Alaluss, Mohamed* et al. |
2024 |
| 5 |
An Accelerated Dynamic Gate Switching Stress Test Concept for SiC MOSFETs at High Drain Drain-Source Voltage (HV-GSS) |
Herrmann, Clemens* et al. |
2024 |
| 6 |
An Improved Approach for an Intermediate Measurement Routine of Dynamic On-State Resistance for GaN Power Devices |
Goller, Maximilian et al. |
2024 |
| 7 |
Current Ripple Reduction Approaches in a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz et al. |
2024 |
| 8 |
Current Ripple Reduction by combination of Si IGBT and SiC MOSFETs in Heavy-Duty Fuel Cell Trucks |
Gürlek, Yavuz et al. |
2024 |
| 9 |
Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP |
Goller, Maximilian et al. |
2024 |
| 10 |
Digital Twin-Based Lifetime Estimation of SiC Power Modules |
Mathew, Anu* et al. |
2024 |
| 11 |
Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event |
Herrmann, Clemens* et al. |
2024 |
| 12 |
Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test |
Liu, Shenyi* et al. |
2024 |
| 13 |
Fault Diagnosis for the Cascaded H-Bridge Multilevel Converter Considering Fault Coupling Between Switches and Sensors |
Xie, Dong* et al. |
2024 |
| 14 |
Gate Oxide Reliability of Current Generation 1.2 kV SiC MOSFETs under Step-Wise Increased Gate Voltage |
Boldyrjew-Mast, Roman* et al. |
2024 |
| 15 |
Gate Switching Instability of SiC MOSFETs under Simultaneously High Drain-Source Voltage and High Frequency Acceleration |
Thiele, Sven* et al. |
2024 |
| 16 |
Impact of Parameter Spread in Parallel-Operated SiC MOSFETs for Hard-Switching Conversion |
Piccioni, Andrea* et al. |
2024 |
| 17 |
Impact of the Level of Negative Gate Voltage on the Temperature Measurement during Power Cycling Testing of SiC MOSFETs |
Heimler, Patrick* et al. |
2024 |
| 18 |
Influence of Current Density on Power Cycling Test of Low Voltage MOSFETs in DC Body-Diode Mode and Switching MOSFET-Mode |
Abuogo, James* et al. |
2024 |
| 19 |
Influence of SiC MOSFET Gate Technologies on Imbalanced Performance in Hard Switching Parallel Operation |
Piccioni, Andrea et al. |
2024 |
| 20 |
Influence of the Gate Voltage during On-Time on the Power Cycling Capability of SiC MOSFETs |
Heimler, Patrick* et al. |
2024 |
