| Nr. |
Titel |
Autoren |
Jahr |
| 1 |
Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime |
Hein, Lukas* et al. |
2025 |
| 2 |
Analysis of Aged Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 3 |
Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 4 |
Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates |
Alaluss, Mohamed* et al. |
2025 |
| 5 |
External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs |
Liu, Xing |
2025 |
| 6 |
Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips |
Abuogo, James et al. |
2025 |
| 7 |
Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution |
Bäumler, Christian* et al. |
2025 |
| 8 |
Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings |
Heimler, Patrick* et al. |
2025 |
| 9 |
Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs |
Abuogo, James* et al. |
2025 |
| 10 |
Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs |
Boldyrjew-Mast, Roman* et al. |
2025 |
| 11 |
Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs |
Mysore, Madhu Lakshman* et al. |
2025 |
| 12 |
Investigation on the High Temperature Behaviour of p-GaN HEMTs by Different Temperature Sensitive Electrical Parameters |
Hein, Lukas* et al. |
2025 |
| 13 |
Investigation on the Short-Circuit Behavior of HV-SiC-MOSFETs in Quasi Series Connection |
Gesele, Felix et al. |
2025 |
| 14 |
Neue Möglichkeiten zum Kampf gegen Krebs – Aber blamables Gutachterwesen |
Bittel, Günther et al. |
2025 |
| 15 |
Physics-Based Reliability Analysis of Power Modules at Substrate and Component Level |
Mathew, Anu et al. |
2025 |
| 16 |
Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery |
Alaluss, Mohamed et al. |
2025 |
| 17 |
Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses |
Abuogo, James* et al. |
2025 |
| 18 |
Power Cycling Testing for Power Semiconductor Switches: Methods, Standards, Limitations, and Outlooks |
Zhang, Yi* et al. |
2025 |
| 19 |
Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests |
Heimler, Patrick* et al. |
2025 |
| 20 |
Reliability Testing of SiC MOSFETs in Different Power Cycling Operating Modes - Focusing on the Challenges of Body Diode Testing |
Hein, Lukas* et al. |
2025 |
