| Nr. |
Titel |
Autoren |
Jahr |
| 1 |
Decoupled Degradation Monitoring of IGBT Modules Based on Temperature-Quantified Indicators |
Ge, Xinglai et al. |
2026 |
| 2 |
Impact of Package Degradation on Short-Circuit Robustness and Temperature Stability during Application-Close Repetitive Switching of IGBTs |
Bäumler, Christian |
2026 |
| 3 |
Influencing Factors on the Dynamic VSD Behaviour of Different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test at Different Operating Modes |
Heimler, Patrick* et al. |
2026 |
| 4 |
On the Reverse Recovery of SiC MOSFET Inverse Diodes |
Lutz, Josef* et al. |
2026 |
| 5 |
Reliability of Wide Bandgap Semiconductors for Automotive Applications |
Kaminski, Nando* et al. |
2026 |
| 6 |
A Comprehensive Study on the Gate Switching Instability of 1.2 kV SiC MOSFETs Considering Application Relevant Conditions |
Thiele, Sven et al. |
2025 |
| 7 |
A Novel Test Method for Bipolar Degradation under Short Dead Times |
Herrmann, Clemens et al. |
2025 |
| 8 |
Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime |
Hein, Lukas* et al. |
2025 |
| 9 |
Analysis of Aged Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 10 |
Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck |
Gürlek, Yavuz* et al. |
2025 |
| 11 |
Dead Time Dependency of Bipolar Degradation in SiC MOSFETs |
Herrmann, Clemens et al. |
2025 |
| 12 |
Dynamic Characterization and Robustness of SiC MOSFETs Based on SmartSiCTM Engineered Substrates |
Alaluss, Mohamed* et al. |
2025 |
| 13 |
External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs |
Liu, Xing |
2025 |
| 14 |
Factors Influencing the Power Cycling Lifetime of Paralleled IGBT Chips |
Abuogo, James et al. |
2025 |
| 15 |
Impact of IGBT emitter pad design and front-side aging on switching stability and temperature distribution |
Bäumler, Christian* et al. |
2025 |
| 16 |
Influence of Low Temperature Swings and Short Heating Times on the Power Cycling Capability of IGBTs in Discrete Housings |
Heimler, Patrick* et al. |
2025 |
| 17 |
Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs |
Abuogo, James* et al. |
2025 |
| 18 |
Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs |
Boldyrjew-Mast, Roman* et al. |
2025 |
| 19 |
Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test |
Heimler, Patrick* et al. |
2025 |
| 20 |
Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior |
Goller, Maximilian* et al. |
2025 |
