Semiconductor Simulation

In order to understand the behavior of semiconductor power devices, especially during overload situations, it is nessary to unterstand internal processes. Parameters like charge carrier concentrations or temperature and current distributions within chip are difficult to measure but necessary for estimating the limits of tested devices. At this point, semiconductor simulations support real measurements with additonal detailed information.

At the professorchip for power electronics, TCAD is the most commonly used semicondcutor simulation software. TCAD is a branch of Electronic Design Automation (EDA) that models semiconductor fabrication and semiconductor device operation. The aim of TCAD is the design of semiconductor processes and devices to fulfill some given specifications.

The features of Sentaurus Device are many and varied. They can be summarized as:

• An extensive set of models for device physics and effects in semiconductor devices (drift-diffusion, thermodynamic)
• General support for different device geometries (1D, 2D, 3D, and 2D cylindrical)
• Mixed-mode support of electro thermal netlists with mesh-based device models and SPICE circuit models

As result of uncountable projects and research works at the chair, the varity of different semiconductor models and capability of different device simulations is huge:

Device simulation of different types of materials like Silicon (Si), 4H-Silicon Carbide (4H-SiC), Gallium-Arsenide (GaAs). In future - Gallium-Nitride (GaN) device simulations are planned Power semiconductor design and device simulation for devices like diodes (PiN, Schottky, MPS), MOSFET, IGBT, Transistors and Thyristors 2-D, 3-D device structures simulation up to 2 million elements or greater than 1600 μm structure width for different voltage class Types of device simulation - single device, single device with a circuit netlist, and multiple devices with a circuit netlist simulations

Current density and temperature development within a HV IGBT during short circuit

Detailed gate structure of a Trench-Gate IGBT

The formation of current filaments in IGBTs during short-circuit were investigated for the different voltage class and new concept of Injection Enhanced Floating Emitter (IEFE) IGBT was developed to suppress the formation of current filament Surge current device simulation for Si IGBTs, 4H-SiC MPS diode and 4H-SiC MOSFET Device simulation of Single Event Burnout (SEB) in PiN diode Device simulation for different short-circuit types (I, II, III) and implementation of the short-circuit detection using TCAD using device simulation In future - simulation of ageing mechanism in IGBT and other power devices