Dr. Sebastian ImhofAG Simulation of New MaterialsChemnitz University of Technology Reichenhainer Straße 70 Tel.: +49 (0) 371 531 37721 |
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Education:
| 2003 | Abitur at Landschulheim Steinmühle, Marburg |
| 2004-2008 | Study of physics at the Philipps-University Marburg |
| 2008 | Diploma thesis in the group of Theoretical Semiconductor Physics (Prof. S. W. Koch), subject: "Microscopic modeling density dependent photoreflection spectra in semiconductor heterostructures" |
| 2008-2011 | Graduate student in the group Simulation of New Materials |
| 2011 | Three month research period at the University of Toronto as a DAAD scholarship holder |
| 2011 | Dissertation: "Microscopic theory of the optical properties of indirect semiconductors" |
Field of research:
Optical properties of indirect semiconductors, Disorder effects in new semiconductor materials
Publications:
K. Kolata, S. Imhof, N. S. Köster, S. Cecchi, D. Chrastina, G. Isella, J. E. Sipe, A. Thränhardt, and S. Chatterjee,
Hole system heating by ultrafast interband energy transfer in optically excited Ge/SiGe quantum wells, Phys. Rev. B 85, 165312 (2012)
S. Imhof, C. Wagner, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster, K. Kolata, S. Chatterjee, S. W. Koch, O. Rubel, X. Lu, S. R. Johnson, D. A. Beaton, and T. Tiedje,
Luminescence dynamics in Ga(AsBi), Appl. Phys. Lett. 98, 161104 (2011)
S. Imhof, C. Wagner, A. Chernikov, M. Koch, N. S. Köster, K. Kolata, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, O. Rubel, and A. Thränhardt,
Evidence of two disorder scales Ga(AsBi), Phys. Status Solidi B 248, 851–854 (2011)
S. Imhof and A. Thränhardt,
Phonon-assisted transitions and optical gain in indirect semiconductors, Phys. Rev. B 82, 085303 (2010)
S. Imhof, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster, K. Kolata, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, and O. Rubel,
Clustering Effects in Ga(AsBi), Appl. Phys. Lett. 96 , 131115 (2010)
C. Bückers, E. Kühn, C. Schlichenmaier, S. Imhof, A. Thränhardt, J. Hader, J. V. Moloney, O. Rubel, W. Zhang, T. Ackemann, S. W. Koch,
Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems, Phys. Stat. Sol. (b) 247, 789-808 (2010)
C. Bückers, S. Imhof, A. Thränhardt, J. Hader, J.V. Moloney and S. W. Koch,
Microscopic modeling of quantum well gain media for VECSEL applications, IEEE J. Sel. Topics in Quantum Electron. 15, 984 (2009)
S. Imhof, C. Bückers, A. Thränhardt, J. Hader, J.V. Moloney and S. W. Koch,
Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells, Semicond. Sci. Technol. 23, 125009 (2008)
Conferences / Seminars / Lectures:
July 18th, 2011
2nd International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation, and Experiment, Guildford (UK)
Invited Talk: Luminescence Dynamics in Ga(AsBi)
August 17th, 2010
10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS), Paderborn
Poster contribution: Disorder Effects in Ga(AsBi)
July 15th, 2010
1st International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation, and Experiment, Ann Arbor (USA)
Talk: Clustering Effects in Ga(AsBi)
March 25th, 2010
Spring conference of the German Physical Society, Regensburg
Poster contribution: Disorder Effects in Ga(AsBi)
March 24th, 2009
Spring conference of the German Physical Society, Dresden
Talk: Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells
February 26th, 2008
Spring conference of the German Physical Society, Berlin
Poster contribution: Characterization of GaSb-based heterostructures by spectroscopic investigations
