Technical Equipment
Composites
Chemical vapor deposition (CVD)
Device: FHR Anlagenbau GmbH
Specifications:
- Reactor: quartz tube
- Base pressure: 1.0 x 10-3 mbar
- Working pressure range: 0.5 - 20 mbar
- Heater: 5 folding ovens
- Max. Temperature: 1000 °C
- Plasma generation: Inductive HF plasma
- Layer thickness: 20 nm – 1 µm
Applications:
- Chemical vapor deposition purely thermal or plasma-assisted at reduced pressure in the tubular reactor (hot-wall, low-pressure CVD)
- Production of ceramic and metallic layers on wires, filaments, fibers and fiber bundles
- Deposition of graded and multi-layers using solid, liquid and gaseous precursors
- Plasma pretreatment of substrates possible
Contact Person
Dr.-Ing. Maik Trautmann
- Telefon:+49 371 531-38846
- Fax:+49 371 531-838846
- Raum:3, 3/A104
- E-Mail:
