| Ahner,N.; Schaller,M.; Bartsch,C.; Baryschpolec,E.; Schulz,S.E.: Surface energy and wetting behaviour of plasma etched porous SiCOH surfaces and plasma etch residue cleaning solutions. 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, Bruges (Belgium), 2008 Sep 21-24; Proceedings, pp 119-120 |
| Ahner,N.; Schulz,S.E.; Blaschta,F.; Rennau,M.: Optical, electrical and structural properties of spin-on MSQ low-k dielectrics over a wide temperature range. Materials for Advanced Metallization - MAM, Dresden (Germany), 2008 Mar 2-5; Microelectronic Engineering, 85 (2008) pp 2111-2113 (ISSN 0167-9317) |
| Ahner,N.; Schulz,S.E.; Prager,L.; Schaller,M.: UV assisted curing of plasma damaged porous ultralow-k material after a k-restore process: influence of UV-wavelength and curing ambient. Advanced Metallization Conference - AMC 2008, San Diego, CA (USA), 2008 Sep 23-25 |
| Gessner,T.; Schulze,K.; Schulz,S.E.: Thermal behaviour of BEOL systems: Comparison of SiO2, low-k and airgap Integration (Invited Talk). 10th International Workshop on Stress-Induced Phenomena in Metallization
, Austin TX (USA), 2008 Nov 5-7 |
| Hermann,S.; Ecke,R.; Schulz,S.E.; Gessner,T.: Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applications . MAM 2008, Dresden (Germany), 2008 Mar 8-11; Microelectronic Engineering, Volume 85, Issue 10 (2008) pp 1979-1983 |
| Hermann,S.; Schulz,S.E.; Gessner,T.: Growth of Multi-Walled Carbon Nanotubes on different Support/Catalyst Systems for Interconnect Applications. Ninth International Conference on
the Science and Application of Nanotubes - NT08, Montpellier (France), 2008 Jun 29-Jul 4 |
| Herrmann,M.; Richter,F.; Schulz,S.E.: Study of Nano-mechanical Properties for Thin Porous Films
through Instrumented Indentation: SiO2 Low Dielectric Constant Films as an Example. Materials for Advanced Metallization - MAM, Dresden (Germany), 2008 Mar 2-5; Microelectronic Engineering, 85 (2008) pp 2172-2174 (ISSN 0167-9317) |
| Hofmann,L.; Kuechler,M.; Gumprecht,T.; Ecke,R.; Schulz,S.E.; Gessner,T.: Investigations on via geometry and wetting behavior for the filling of Through Silicon Vias by copper electro depostition. Proceedings, Advanced Metallization Conference 2007, Mater. Res. Soc. Conf. Proc. AMC XXIV (2008) pp 623-630 (ISBN 978-1-55899-992-3 / ISSN 1048-0854) |
| Jakob,A.; Shen,Y.; Waechtler,T.; Schulz,S.E.; Gessner,T.; Riedel,R.; Fasel,C.; Lang,H.: Copper(I) Carboxylates of Type [(nBu3P)mCuO2CR] (m = 1, 2, 3) -- Synthesis, Properties, and their Use as CVD Precursors. Z. Anorg. Allg. Chem., 634 (2008) pp 2226-2234 (ISSN 0044-2313) |
| Norman,J.A.T.; Perez,M.; Schulz,S.E.; Waechtler,T.: New precursors for CVD copper metallization. Materials for Advanced Metallization - MAM, Dresden (Germany), 2008 Mar 2-5; Microelectron. Eng., 85 (2008) pp 2159-2163 (ISSN 0167-9317) |
| Roth,N.; Jakob,A.; Waechtler,T.; Schulz,S.E.; Gessner,T.; Lang,H.: Silver, Copper and Ruthenium Precursors for ALD and CVD – An Overview. GerALD 2008 -- German Workshop on Atomic Layer Deposition, Halle (Saale) (Germany), Max Planck Institute of Microstructure Physics, 2008 Sep 22-23 |
| Rudra,S.; Waechtler,T.; Friedrich,M.; Louis,S.J.; Himcinschi,C.; Zimmermann,S.; Schulz,S.E.; Silaghi,S.; Cobet,C.; Esser,N.; Gessner,T.; Zahn,D.R.T.: Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits. phys. stat. sol. (a), 205 (2008) pp 922-926 (ISSN 0031-8965) |
| Schulze,K.; Schulz,S.E.; Koerner,H.; Gessner,T.: Airgap structures by using sacrificial wet etch: Fabrication, thermal and mechanical behavior, reliability. Advanced Metallization Conference - AMC 2008, San Diego, CA (USA), 2008 Sep 23-25 |
| Waechtler,T.; Oswald,S.; Pohlers,A.; Schulze,S.; Schulz,S.E.; Gessner,T.: Copper and Copper Oxide Composite Films Deposited by ALD on Tantalum-Based Diffusion Barriers. Proceedings, Advanced Metallization Conference 2007, Mater. Res. Soc. Conf. Proc. AMC XXIII (2008) pp 23-29 (ISBN 978-1-55899-992-3 / ISSN 1048-0854) |
| Waechtler,T.; Oswald,S.; Roth,N.; Lang,H.; Ecke,R.; Schulz,S.E.; Gessner,T.: Atomic Layer Deposition of Ultra-Thin Copper and Copper Oxide Films for ULSI Metallization Purposes. Advanced Metallization Conference - AMC 2008, San Diego, CA (USA), 2008 Sep 23-25 |
| Waechtler,T.; Oswald,S.; Roth,N.; Lang,H.; Schulz,S.E.; Gessner,T.: ALD of Copper and Copper Oxide Thin Films for Applications in Metallization Systems of ULSI Devices. 8th International Conference on Atomic Layer Deposition (ALD 2008), Bruges (Belgium), 2008 Jun 29 - Jul 2 |
| Waechtler,T.; Roth,N.; Oswald,S.; Lang,H.; Schulz,S.E.; Gessner,T.: Atomic layer deposition of copper and copper oxide thin films for applications in microelectronic metallization systems. GerALD 2008 -- German Workshop on Atomic Layer Deposition, Halle (Saale) (Germany), Max Planck Institute of Microstructure Physics, 2008 Sep 22-23 |
| Waechtler,T.; Schulz,S.E.: Copper Oxide and Copper Thin Films Grown by ALD for Seed Layer Applications (Invited Talk). Twenty Fifth International VLSI Multilevel Interconnection Conference (VMIC), Fremont, California (USA), 2008 Oct 28-30; Proceedings, p 365 |
| Zimmermann,S.; Blaschta,F.; Schaller,M.; Ruelke,H.; Schulz,S.E.; Gessner,T.: Investigation of etch processes of dense and porous low-k dielectrics using OES and QMS as insitu diagnostic methods. Advanced Metallization Conference - AMC 2008, San Diego, CA (USA), 2008 Sep 23-25 |
