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 #285 In recent years, pronounced trends like the Internet of Things or 5G has led to more and more connected and digitalized cyber-physical systems. This results in an increased demand on embedded dedicated hardware security. Hence, unclonable, unpredictable and tamper-evident hardware security primitives, such as Physical Unclonable Functions (PUFs), became more and more important. In this context, emerging nanotechnologies based on nanomaterials such as Carbon Nanotube got into focus due to technological compatibility to CMOS as well as promising security features.
In this research project, a systematic study on the wafer-level CNT integration process is planned targeting processes for appropriate level of property distribution in large arrays of CNT-FETs designed as a PUF element. By means of scanning electron microscopy, Raman spectroscopy, and electrical parameter analyzation as well as correlative data analysis, an extended view on the PUFs and processes should be elaborated.
Tasks:
1. Literature review
2. CNT dispersion preparation
3. Processes and systematical parameter variations
4. Evaluation of measurement data
5. Regular scientific presentations of the progress in workgroup seminar
Requirements:
1. Study of microtechnology/microelectronics, physics, chemistry, mathematics or related fields
2. Basic knowledge about analytical characterization methods
3. Organized, result-oriented and self-motivated
4. Very good understanding and reading language skills in German, English Contact: Apply for this job by email Possible as: Student research project, Bachelor-Thesis, Master-Thesis, Diploma Thesis Addressed topics: Micro- and Nanoelectronics, Nano technology, Measurement / analytics, Processes / technology | | | | | | | |
#281 The impact of moisture on the reliability of silica thin films can lead to dramatic effect in microelectronic and microelectromechanical systems. For the deposition of Silica, different techniques can be used, which usually requires high temperature treatments. A thermal oxidation usually takes places at temperatures above 1000 °C, whereas the chemical vapor deposition (CVD) of silica by TEOS still takes temperature above 700 °C. Within the beginning of the 21th century, the microelectronic industry focuses more on the introduction and optimization of high- and low-k dielectrics, whereas novel emerging devices and technologies require low-temperature oxides. Low temperature silica can either be deposited by plasma enhanced chemical vapor deposition (PECVD) at temperature below 400 °C or by spin coating techniques. However, the lower the deposition temperature, the lower the material properties like mechanical and electrical stability, density or material defects. This all can lead to an increasing uptake of moisture in low temperature oxides and low-k dielectrics. Further process steps can led to a higher amount of water inside the material and therefor to a further degradation of the silica, which finally causes a failure of the whole system. Consequently, developing new devices and technologies needs well-defined knowledge of process- and material-properties and parameter.
The research project will focus on destructive and non-destructive characterization techniques to investigate the water uptake of the different Silica, deposited by high to low temperature processes.
The main tasks will cover:
- Literature research
- Sample preparation and batch mentoring (Losbetreuung)
- Thickness measurements by spectral ellipsometry
- CV-Measurements and sample preparation of MIS-structures
- FTIR-measurements and evaluation
- Correlation with CV-Measurements
- Potential Silica to be used: thermal grown SiO2, CVD SiO2, PECVD SiO2, Spin-On SiO2 and low-k Oxides, PECVD low-k Oxides
Contact: Apply for this job by email Possible as: Student research project Addressed topics: MEMS, Micro- and Nanoelectronics, Nano technology, Measurement / analytics, Processes / technology, Review of Literature | | | | | | | |
#282 Silica is one of the most used oxides in microelectronics and microelectromechanical systems (MEMS) as high-quality, mechanical and electrical very stable insulator and passivation layer. Prominent examples are the gate isolation of metal-oxide-semiconductor field-effect transistors (MOSFETs) or the Inter- and Intra- level dielectrics in integrated circuits (ICs). For the deposition of Silica, different techniques can be used, which usually requires high temperature treatments. A thermal oxidation usually takes places at temperatures above 1000 °C, whereas the chemical vapor deposition (CVD) of silica by TEOS still takes temperature above 700 °C. Within the beginning of the 21th century, the microelectronic industry focuses more on the introduction and optimization of high- and low-k dielectrics, whereas novel emerging devices and technologies require low-temperature oxides. Low temperature silica can either be deposited by plasma enhanced chemical vapor deposition (PECVD) at temperature below 400 °C or by spin coating techniques. However, the lower the deposition temperature, the lower the material properties like mechanical and electrical stability, density or material defects. Further process steps can led to a further degradation of the silica and can finally cause a failure of the whole system. Consequently, developing new devices and technologies needs well-defined knowledge of process- and material-properties and parameter.
The research project will focus on non-destructive characterization techniques to investigate the material properties of the different Silica, deposited by high to low temperature processes.
The main tasks will cover:
- Literature research
- Sample preparation and batch mentoring (Losbetreuung)
- Spectral ellipsometry measurements and evaluation
- FTIR-measurements and evaluation
- Potential Silica to be used: thermal grown SiO2, CVD SiO2, PECVD SiO2, Spin-On SiO2 and low-k Oxides, PECVD low-k Oxides
Contact: Apply for this job by email Possible as: Student research project Addressed topics: MEMS, Micro- and Nanoelectronics, Nano technology, Measurement / analytics, Processes / technology, Review of Literature | | | | | | | |
#284 Die CarbonNanodevice Gruppe am ZfM/ Fraunhofer ENAS erforscht und entwickelt Kohlenstoff-basierende nano-elektronische Bauelemente für Elektronik und Sensoranwendungen. Es konnte bereits gezeigt werden, dass mit einer noch nicht optimierten Kohlenstoffnanoröhren-Technologie die Performance von State-of-the-art Silizium Hochfrequenz-Transistoren erreicht werden kann. Hierfür wird hochspezielles und einzigartiges Equipment verwendet, welches auf die Integration und Vermessung von Nanomaterialien in Bauelementen und Systemen ausgelegten ist. Im Rahmen einer Studentenarbeit soll die Leistungsfähigkeit solcher HF Transistoren weiter verbessert werden.
Aufgaben:
Durchführung und Untersuchung von verschiedenen nass- und trochenchemischen Reinigungsprozeduren von Kohlenstoffnanoröhren in Feldeffekttransistoren. Die Verschiedenen Reinigungverfahren werden hinsichtlich ihrer Effektivität durch XPS-Spektroskopie, Rasterkraftmikroskopie, Raman-Spektroskopie sowie durch elektrische Messungen der Transistoren charakterisiert. Speziell soll das Verfahren/ die Prozedur ermittelt werden, welche den Kontaktwiederstand zwischen Kohlenstoffnanoröhre und Metallelektrode minimiert.
Voraussetzung:
- Studium in den Fachrichtungen: Physik, Elektrotechnik und Informationstechnik, Mikrosysteme und Mikroelektronik, o.Ä.
- Laborerfahrung
- Erfahrung beim Datenauswerten
- Selbstständige und zuverlässige Arbeitsweise
- englische und deutsche Sprachkenntnisse
Contact: Apply for this job by email Possible as: Student research project, Bachelor-Thesis, Master-Thesis Addressed topics: Micro- and Nanoelectronics, Nano technology, Measurement / analytics, Processes / technology, Review of Literature | | | | | | | |
