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Professur Elektronische Bauelemente der Mikro- und Nanotechnik
Professur Elektronische Bauelemente der Mikro- und Nanotechnik

Course Micro- and Nanodevices



The enrollment will be effected on the OPAL platform, where you'll find further informations about the course.

Course Content

Lecture Complexes
  • Semicondcuctor basics
  • pn-junction / diode
  • MOS-Transistor basics
  • MOS transistors with sizes in the sub-100nm range
  • New MOS transistor concepts (Multi-gate transistors, FinFETs, etc.)
  • Single-electron transistors
  • Quantum devices (Resonant tunnel diodes - RTDs, etc.)
  • Bipolar transistors with sizes in the sub-1µm range
  • Carbon nano-tubes
Exercise Complexes
  • Wave, Particle and Carriers in the Semiconductor
  • pn Junction and Diode (generation and recombination effects, currents in diodes)
  • MOS Transistor (calculation of important parameters, short and long channel effects, breakdown mechanism)
Practical Training
  1. The MOS field effect transistor (Measuring)
  2. Simulation of a MOSFET using ELDO / PSpice

Degree Programs

  • Compulsory Subject in the 1st Semester of the Master Course Micro and Nano Systems (M_MN__1)

  • Pflichtfach im 1. Semester des Master-Studiengangs Mikrosysteme und Mikroelektronik (M_MSMN1, alternativ zu BMNT)

Timetable for the current Semester

TypeWeekdayGroupsTimeRoomStart
Lon ThursdaysM_MN1_1, M_MN2_109.15-10.452/W0382023-10-12
Eon Fridays, 2nd weekM_MN1_1, M_MN2_107.30-09.002/W0372023-11-03
Pon FridaysM_MN1_1, M_MN2_109.15-13.002/W3682023-10-27

Teaching Materials

Examination current Semester

Date / Time:Tuesday, 2024-02-27, 08 - 11 am
Room:2/N112 (new: C10.112)
Type:Written examination
Permitted:Pocket calculator (no Bluetooth / Wifi), empty sheets of gridded paper, formula sheet will be provided
Examiner:Prof. Horstmann, M.Eng. Hafez
Surveillance:DI Loebel