Course Micro and Nano Devices
The enrollment will be effected on the OPAL platform, where you'll find further informations about the course.
Course Content
Lecture Complexes- Semicondcuctor basics
- pn-junction / diode
- MOS-Transistor basics
- MOS transistors with sizes in the sub-100nm range
- New MOS transistor concepts (Multi-gate transistors, FinFETs, etc.)
- Single-electron transistors
- Quantum devices (Resonant tunnel diodes - RTDs, etc.)
- Bipolar transistors with sizes in the sub-1µm range
- Carbon nano-tubes
- Wave, Particle and Carriers in the Semiconductor
- pn Junction and Diode (generation and recombination effects, currents in diodes)
- MOS Transistor (calculation of important parameters, short and long channel effects, breakdown mechanism)
- The MOS field effect transistor (Measuring)
- Simulation of a MOSFET using Eldo / PSpice
Degree Programs
- Compulsory Subject in the 1st Semester of the Master Course Micro and Nano Systems (M_MN__1)
- Compulsory Elective Subject in the 1st Semester of the Master Course Design and Test for Integrated Circuits (M_DT__1)
Timetable for the current Semester
| Type | Weekday | Groups | Time | Room | Start |
|---|---|---|---|---|---|
| L | on Mondays | M_MN1_1, M_MN2_1, M_DT__1, M_DT__2 | 15.30-17.00 | C25.012 | 2025-10-13 |
| E | on Fridays, 1st week | M_MN1_1, M_MN2_1, M_DT__1, M_DT__2 | 07.30-09.00 | C22.101 | 2025-10-24 |
| P | on Wednesdays | M_MN1_1, M_MN2_1, M_DT__1, M_DT__2 | 15.30-18.45 | C25.368 | 2025-10-29 |
Teaching Materials
- Lecture slides
- 1 - Introduction
- 2 - Semicondcuctor Basics
- 3 - Charges in Semiconductors
- 4 - Currents in Semiconductors
- 5 - The pn-junction
- 6 - The diode
- 7 - MOS-Transistor Basics
- 8 - Short-Channel MOS-Transistors I
- 9 - Short-Channel MOS-Transistors II
- Worksheets
- Worksheet 1 (Wave, Particle and Carrier in the Semiconductor 1)
- Worksheet 2 (Wave, Particle and Carrier in the Semiconductor 2)
- Worksheet 3 (pn Junction and Diode 1)
- Worksheet 4 (pn Junction and Diode 2)
- Worksheet 5 (Integrated MOS Transistors 1)
- Worksheet 6 (Integrated MOS Transistors 2)
- Lab Guides
- IE-5 (The MOS Field Effect Transistor (Measuring))
- ES-4 (Simulation of a MOSFET using Eldo)
- ES-4 (Simulation of a MOSFET using LTspice)
- ES-4 (Simulation of a MOSFET using PSpice)
Examination current Semester (catch up and repeat)
| Date / Time: | Tuesday, 2026-08-04, 8 - 11 AM |
|---|---|
| Room: | C10.112 (old: 2/N112) |
| Type: | Written examination |
| Permitted: | Pocket calculator (w/o Bluetooth / Wifi), empty sheets of gridded or white paper, formula sheet will be provided |
| Examiner: | Prof. Horstmann, M.Sc. Zhang |
| Surveillance: | DI Loebel |
