lifetime modelling
and above the semiconductor limits
and special phenomena
semiconductor test solutions
Welcome to the Professorship of Power Electronics!
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The research focus of the Professorship of Power Electronics is the investigation of robustness and reliability of power semiconductor devices.
The main focus is on the topics of overload capability (short circuit, surge current, avalanche) and power cycling ruggedness. This includes the consideration of the semiconductor materials Si, SiC and GaN.
Semiconductor and thermomechanical simulations on FEM basis are being used to examine internal physical processes further in detail.
Until 2020 the professorship was headed by Prof. Dr.-Ing. Prof. h.c. Josef Lutz. After that Prof. Dr.-Ing. Thomas Basler took over.
News
Speaker: Ing. Valerie Montabonnet and Dr.-Ing. Davide Aguglia, CERN. The event starts at 03:30 pm at room 2/N112.
Further information
Speaker: Dr.-Ing. Alexander Rambetius, Valeo Siemens. The event starts at 03:30 pm at room 2/N113.
Further information
The recently at the ETG journal published article from Professor Lutz and Professor Basler can be found here:
PDF
In the following article, an offical statement of Prof. Lutz can be found (german only):
Christian Schwabe, PhD Student at the Chair of Power Electronics at the Technical University of Chemnitz, received at the -PCIM Europe 2021-, the biggest conference for power electronics in europe, the Young Engineer Award.
The article (german) can be found here TU Homepage or as .
The whole article (in german) can be found here: