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Professur Leistungselektronik und elektromagnetische Verträglichkeit
Professur Leistungselektronik und elektromagnetische Verträglichkeit

Prof. Dr.-Ing Josef Lutz


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Technische Universität Chemnitz
Fakultät für Elektrotechnik und Informationstechnik
Professur für Leistungselektronik und elektromagnetische Verträglichkeit
09126 Chemnitz
Reichenhainer Straße 70
Adolf-Ferdinand-Weinhold-Bau, Raum C26.127
 
Tel:+49 371 531-33618
 
Fax: +49 371 531-833618
 
josef.lutz@...


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Josef Lutz studierte Physik an der Universität Stuttgart, ab 1983 arbeiterte er bei Semikron Elektronik, in Nürnberg. Arbeitsschwerpunkte waren zuerst die Entwicklung von GTO-Thyristoren, dann die Entwicklung von schnellen Dioden. Er führte die Controlled Axial Lifetime (CAL) Diode ein und hält eine Reihe Patente im Gebiet schneller Dioden. 1999 promovierte er in Elektrotechnik an der Universität Ilmenau. Seit August 2001 ist er Professor für Leistungselektronik und elektromagnetische Verträglichkeit an der TU Chemnitz. Er ist Mitglied des Vorstands des ZfM, Beratendes Mitglied des Boards of Direktors der PCIM , Mitglied des International Steering Committee der EPE,  des Technical Commttes der ISPSD, des Programmkomitees der ISPS, des technischen Programmkomitees der CIPS und Mitglied des Editorial Advisory Board der Fachzeitschrift Microelectronics Reliability. 2005 wurde er von der nordkaukasischen technischen Universität Stavropol zum Ehrenprofessor ernannt. →Mehr Informationen



Einige aktuelle Publikationen
Nr. Titel Autoren Jahr
1 Bipolares Halbleiterbauelement und Verfahren zur Herstellung einer Halbleiterdiode Lutz, Josef et al. 2018
2 Difference in device temperature determination using pn-junction forward voltage and gate threshold voltage Zeng, Guang et al. 2018
3 Effects of Inorganic Encapsulation on Power Cycling Lifetime of Aluminum Bond Wires Jiang, Nan* et al. 2018
4 Experimental investigation of linear cumulative damage theory with power cycling test Zeng, Guang et al. 2018
5 First results of development of a lifetime model for transfer molded discrete power devices Zeng, Guang et al. 2018
6 Investigation of power cycling capability of a novel Cu wire bonded interconnection system Jiang, Nan* et al. 2018
7 Investigation of power cycling capability of advanced Cu wire bonding system (DTS®) Jiang, Nan* et al. 2018
8 Investigation of thermal conditions in power modules for traction application depending on the delamination of the system solder Schwabe, Christian et al. 2018
9 Investigation of ton Dependency of Al-clad Cu Bond Wires under Power Cycling Tests Jiang, Nan* et al. 2018
10 Investigation on the interaction between surge current pulse and power cycling test Li, Zheming et al. 2018
11 Langfristige technische Trends und Industrie 4.0 unter dem Gesichtspunkt der Nachhaltigkeit Lutz, Josef 2018
12 Local Aluminium Modification as Indicator for Current Filaments in IGBTs far beyond the Safe Operating Area Bhojani, Riteshkumar et al. 2018
13 Modulares Elektrofahrzeug Lutz, Josef et al. 2018
14 Monitoring of age-relevant parameters in an integrated inverter system for electrical drives based on SiC-BJTs Frankeser, Sophia 2018
15 Observation of Current Filaments in IGBTs with Thermoreflectance Microscopy Bhojani, Riteshkumar et al. 2018
16 On-time Dependency on the Power Cycling Capability of Al Bond Wires Measured by Shear Test Jiang, Nan* et al. 2018
17 Perspektiven fortschrittlicher und kritischer Wissenschaft und Kultur : Tagungsband 10. Offene Akademie 2018 Klug, Christoph et al. 2018
18 Power cycling capability of AlCu ribbons Clausner, Sven et al. 2018
19 Power cycling reliability results of GaN HEMT devices Franke, Jörg* et al. 2018
20 Reliability and reliability investigation of wide-bandgap power devices Lutz, Josef* et al. 2018
21 Reliability evaluation Lutz, Josef et al. 2018
22 Repetitive surge current test of SiC MPS diode with load in bipolar regime Palanisamy, Shanmuganathan et al. 2018
23 Ruggedness of 1200V SiC Schottky and MPS Diodes Fichtner, Susanne 2018
24 Semiconductor Power Devices : Physics, Characteristics, Reliability Lutz, Josef et al. 2018
25 Study on power cycling test with different control strategies Zeng, Guang* et al. 2018
26 Temperature Sensitive Electrical Parameters in different IGBTs for the measurement in an inverter Zhang, Jianjie et al. 2018
27 Thermal behavior and aging mechanisms of power device packages Mikutta, Lukas 2018
28 Transistor Device with High Current Robustness Bhojani, Riteshkumar et al. 2018
29 Transistorbauelement mit hoher Stromfestigkeit Bhojani, Riteshkumar et al. 2018
30 Unified view on energy and electrical failure of the short-circuit operation of IGBTs Baburske, Roman* et al. 2018
31 A Novel Injection Enhanced Floating Emitter (IEFE) IGBT structure Improving the Ruggedness Against Short-Circuit and Thermal Destruction Bhojani, Riteshkumar et al. 2017
32 Breakdown of gate oxide of SiC-MOSFETs and Si-IGBTs under high temperature and high gate voltage Beier-Möbius, Menia* et al. 2017
33 Determination of State-of-Health and Remaining Lifetime of Power Modules Franke, Jörg* et al. 2017
34 Device for temporarily carrying current of energy transmission or distribution equipment according to the needs Geske, Martin et al. 2017
35 GATESPANNUNGSÜBERSTEUERUNG FÜR DAS SCHALTEN VON STOSSSTRÖMEN IN IGBT SCHALTERN Geske, Martin et al. 2017
36 Informationstechnik und Industrie 4.0 unter dem Gesichtspunkt der Nachhaltigkeit Lutz, Josef 2017
37 Leistungshalbleiter als Schlüsselbauelemente für eine künftige nachhaltige Gesellschaft : Stand bei Leistungshalbleiter-Bauelementen und zu erwartende Enwicklungen Lutz, Josef 2017
38 Power cycling capability of high power IGBT modules with focus on short load pulse duration Zeng, Guang et al. 2017
39 Power cycling methods for SiC MOSFETs Herold, Christian et al. 2017
40 Power cycling test with power generated by an adjustable part of switching losses Seidel, Peter* et al. 2017
41 POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE Becker, Martin et al. 2017
42 Schnelle Dioden mit tiefen Donatoren aus Selen Pertermann, Eric 2017
43 SiC-MOSFET: Hohe Zuverlässigkeit ist möglich, aber es gibt große Unterschiede Lutz, Josef 2017
44 Thermal calculation methodology for lifetime estimation of semiconductor devices in MMC application Ye, Yijun et al. 2017
45 Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage Beier-Möbius, Menia et al. 2016
46 Der Klimagipfel und die Leistungselektronik Lutz, Josef 2016
47 E-Mobility muss umfassender gedacht werden Lutz, Josef 2016
48 High-Current Power Cycling Test-Bench for Short Load Pulse Duration and First Results Zeng, Guang et al. 2016
49 Improving the short circuit ruggedness of IGBTs Tinschert, Lukas* et al. 2016
50 Internal processes in power semiconductors at virtual junction temperature measurement Chen, Weinan* et al. 2016
51 Leistungshalbleiterbauelement mit verbesserter Stabilität und Verfahren zur Herstellung Lutz, Josef et al. 2016
52 LEISTUNGSHALBLEITERMODUL MIT KURZSCHLUSS-AUSFALLMODUS Lutz, Josef et al. 2016
53 Requirements in power cycling for precise lifetime estimation Herold, Christian* et al. 2016
54 Simulation study on collector side filament formation at short-circuit in IGBTs Bhojani, Riteshkumar et al. 2016
55 Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices Muhsen, Hani 2016
56 Topologies for inverter like operation of power cycling tests Herold, Christian* et al. 2016
57 Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement Palanisamy, Shanmuganathan et al. 2016
58 Analyse chipnaher Verbindungen mittels thermisch sensibler elektrischer Parameter Herold, Christian et al. 2015
59 Comparison of drivers for SiC-BJTs, Si-IGBTs and SiC-MOSFETs Frankeser, Sophia* et al. 2015
60 Design and Evaluation of Gate Drivers of SiC MOSFET Muhsen, Hani et al. 2015
61 Determination of parameters with high impact on fatigue of new Interconnect Technologies Tinschert, Lukas* et al. 2015
62 Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations Bhojani, Riteshkumar et al. 2015
63 IGBTs WORKING IN THE NDR REGION OF THEIR I-V CHARACTERISTICS Bhojani, Riteshkumar et al. 2015
64 Methods for virtual junction temperature measurement respecting internal semiconductor processes Herold, Christian et al. 2015
65 Neue Technologien für hochzuverlässige Aufbau- und Verbindungstechniken leistungselektronischer Bauteile Becker, Martin 2015
66 Optimization of rectifiers for aviation regarding power density and reliability Liebig, Sebastian 2015
67 Possible failure modes in Press-Pack IGBTs Tinschert, Lukas* et al. 2015
68 Ruggedness of 1200 V SiC MPS diodes Fichtner, Susanne et al. 2015
69 Surge Current Behaviour of Different IGBT Designs Kowalsky, Jens et al. 2015
70 Technologietrends auf dem Gebiet der Leistungselektronik Lutz, Josef et al. 2015
71 Three-Phase Voltage Source Inverter Using SiC MOSFETs - Design and Optimization Muhsen, Hani et al. 2015
72 Transient Avalanche Oscillation of IGBT Under High Current Hong, Tao 2015
73 Untersuchung von tiefen Störstellen in SiC-Schottky-Dioden mit frequenzabhängiger Admittanzspektroskopie Pertermann, Eric et al. 2015
74 Using the on-state-Vbe,sat-voltage for temperature estimation of SiC-BJTs during normal operation Frankeser, Sophia* et al. 2015
75 Using the Zth(t) – power pulse measurement to detect a degradation in the module structure Hiller, Sebastian et al. 2015
76 Analyzing the State of Health of Diode Layers by using Structure Functions Richter, Martin et al. 2014
77 Detection of Deep Energy Levels in Semiconductors Using Frequency-Resolved Impedance Spectroscopy Pertermann, Eric et al. 2014
78 Deutliche Fortschritte bei Power Devices auf der PCIM Europe Lutz, Josef 2014
79 Electro-Thermal Simulations and Experimental Results on the Surge Current Capability of 1200 V SiC MPS Diodes Fichtner, Susanne et al. 2014
80 Experimental Results of Surge Current Measurements for 600 V GaAs pin Diodes Kowalsky, Jens et al. 2014
81 GaAs pin Diode Devices and Technology for High Power applications at 600V and above Kowalsky, Jens et al. 2014
82 IGBTs Conducting Diode-Like Surge Currents Basler, Thomas et al. 2014
83 Lastwechseltestbasierte Lebensdaueranalysemethoden für Leistungshalbleiter in Offshore-Windenergieanlagen Bohlländer, Marco 2014
84 Leistungsschaltmodul mit verringerter Oszillation und Verfahren zur Herstellung einer Leistungsschaltmodulschaltung Schulze, Hans-Joachim et al. 2014
85 Measurement of Tvj in a B6 IGBT inverter for electric vehicles using the Vce(T)-method Hiller, Sebastian et al. 2014
86 On-line temperature measurement of SiC-BJTs using Vbe thermal sensitive electrical parameters Frankeser, Sophia et al. 2014
87 Optimization of the Selenium Field-Stop Profile with Respect to Softness and Robustness Pertermann, Eric et al. 2014
88 Packaging and Reliability of Power Modules Lutz, Josef 2014
89 Porenausbildung in großflächigen Weichlötverbindungen am Beispiel von Leistungsmodulen Weis, Sebastian et al. 2014
90 Power cycling capability of Modules with SiC-Diodes Herold, Christian et al. 2014
91 Power Switching Module with Reduced Oscillation and Method for Manufacturing a Power Switching Module Circuit Lutz, Josef et al. 2014
92 Proportional Driver for SiC BJT’s in electric vehicle inverter application Frankeser, Sophia et al. 2014
93 Ruggedness of High-Voltage IGBTs and Protection Solutions Basler, Thomas 2014
94 Simulation of 15 A – 600 V GaAs pin Diodes in Comparison with Experimental Results Bhojani, Riteshkumar et al. 2014
95 Some aspects on ruggedness of SiC power devices Lutz, Josef et al. 2014
96 Special Session HGÜ: 1 Million Volt für weniger Verluste Lutz, Josef 2014
97 Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept Basler, Thomas et al. 2014
98 Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices Poller, Tilo 2014
99 Verfahren zur Herstellung eines Leistungsbauelements mit einer vergrabenen n-dotierten Halbleiterzone und Leistungsbauelement Lutz, Josef et al. 2014
100 Work on a simulation-based model for lifetime estimation in power cycling tests Steinhorst, Peter et al. 2014
101 A bipolar semiconductor component with a fully depletable channel zone Baburske, Roman et al. 2013
102 Analysis of the plastic deformation in aluminium metallizations of Al2O3 - based DAB substrates Poller, Tilo et al. 2013
103 Approach of a physically based lifetime model for solder layers in power modules Steinhorst, Peter et al. 2013
104 Cathode-side Current Filaments in High-Voltage Power Diodes beyond the SOA Limit Baburske, Roman et al. 2013
105 Comparison of the thermal cycling capability between power moduleswith DAB and DCB substrates with Al2O3 ceramic Poller, Tilo et al. 2013
106 Der Strompreis, die „Energiewende“ und die Leistungselektronik Lutz, Josef 2013
107 Detection of Deep Energy Levels in Diodes Using Impedance Spectroscopy Pertermann, Eric et al. 2013
108 Determination of the thermal and electrical contact resistance of press pack housings Poller, Tilo et al. 2013
109 Die Bedeutung der Offenen Akademie Lutz, Josef 2013
110 Die zu wenig bekannte Schlüsseltechnik Lutz, Josef 2013
111 Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs Basler, Thomas et al. 2013
112 Evaluation of the submodel technique for FEM simulations of power electronic housings under power cycling conditions Tinschert, Lukas et al. 2013
113 Frequency-Dependent Description of the Thermal Energy Inputs in Each Layer of a Semiconductor by Using Bode Diagrams Richter, Martin et al. 2013
114 GaAs pin Diodes as Possible Freewheeling Diodes Kowalsky, Jens et al. 2013
115 Halbleiterbauelement mit optimiertem Randabschluss Barthelmeß, Rainer et al. 2013
116 Halbleiterbauelement mit verbesserter Robustheit Lutz, Josef et al. 2013
117 Improving the Accuracy of Junction Temperature Measurement with the Square-Root-t Method Herold, Christian et al. 2013
118 Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs Poller, Tilo et al. 2013
119 Lastwechselfestigkeit von Halbleiter-Leistungsmodulen für den Einsatz in Hybridfahrzeugen Hensler, Alexander 2013
120 Measurement of a Complete HV IGBT I-V-Characteristic up to the Breakdown Point Basler, Thomas et al. 2013
121 Measurements and Simulations of the Turn-Off Behaviour of Diodes with Deep Energy Levels of Se implanted in Si Pertermann, Eric et al. 2013
122 Modularer Multilevelstromrichter für Anwendungen in der Hochspannungsgleichstromübertragung Dommaschk, Mike 2013
123 Modulares Elektrofahrzeug Lutz, Josef et al. 2013
124 Perspektiven fortschrittlicher und kritischer Wissenschaft und Kultur : Tagungsband 8. Offene Akademie 2013 Klug, Christoph et al. 2013
125 Power module technology with extended reliability for hybrid electric vehicle applications Lutz, Josef et al. 2013
126 Reliability of Discrete Power Semiconductor Packages and Systems – D2Pak and CanPAK in Comparison Hofmann, Kay et al. 2013
127 Semiconductor component with improved robustness Lutz, Josef et al. 2013
128 SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION Barthelmeß, Rainer et al. 2013
129 Semiconductor Power Devices: Physics, Characteristics, Reliability, Packaging Technology, Failure Mechanisms, Oscillations : Chinesische Ausgabe - Chinese Edition Lutz, Josef et al. 2013
130 Surge-Current Resistant Semiconductor Diode with Soft Recovery Behaviour and Methods for Producing a Semiconductor Diode Baburske, Roman et al. 2013
131 A Simplified Algorithm for Predicting Power Cycling Lifetime in Direct Drive Wind Power Systems D'Arco, Salvatore et al. 2012
132 Challenges Regarding Parallel Connection of SiC JFETs Peftitsis, Dimosthenis et al. 2012
133 Characterisation and evaluation of 1700V SiC-MOSFET modules for use in an active power filter in aviation Liebig, Sebastian et al. 2012
134 Characterisation and evaluation of 1700V SiC-MOSFET modules for use in an active power filter in aviation Liebig, Sebastian et al. 2012
135 Das Netzproblem und die Leistungselektronik Lutz, Josef 2012
136 Destruction Behavior of Power Diodes beyond the SOA Limit Baburske, Roman et al. 2012
137 Diodes using the SPEED concepts: Trade-off between Switching Ruggedness and Surge Current Ruggedness Pfaffenlehner, Manfred et al. 2012
138 Dynamic avalanche in bipolar power devices Lutz, Josef et al. 2012
139 Für Solar Lutz, Josef 2012
140 Halbleiter-Leistungsbauelemente - Physik, Eigenschaften, Zuverlässigkeit Lutz, Josef 2012
141 Influence of thermal cross-couplings on power cycling lifetime of IGBT power modules Poller, Tilo et al. 2012
142 Keine halben Sachen Lutz, Josef 2012
143 Mechanical analysis of press-pack IGBTs Poller, Tilo* et al. 2012
144 Perspektiven fortschrittlicher und kritischer Wissenschaft und Kultur : Dokumentation 7. Offene Akademie 2011 Klug, Christoph et al. 2012
145 Power Cycling Capability of New Technologies in Power Modules for Hybrid Electric Vehicles Herold, Christian et al. 2012
146 Short-Circuit Behaviour of High-Voltage IGBTs in Circuits with di/dt Snubbers Basler, Thomas et al. 2012
147 Short-Circuit Ruggedness of High-Voltage IGBTs Lutz, Josef et al. 2012
148 Stoßstromfeste Halbleiterdiode mit weichem Abschaltverhalten und Verfahren zur Herstellung einer Halbleiterdiode Baburske, Roman et al. 2012
149 Surge Current Capability of IGBTs Basler, Thomas et al. 2012
150 Technologie und pysikalische Eigenschaften strahlungsinduzierter Zentren in Silizium Klug, Jan N. 2012
151 The Effect of Selenium Deep Energy Levels in Si on the Turn-Off Behaviour of Diodes Pertermann, Eric et al. 2012
152 Verfahren zur Herstellung einer vergrabenen n-dotierten Halbleiterzone in einem Halbleiterkörper und Halbleiterbauelement Schulze, Hans-Joachim et al. 2012
153 Wie kann die Versorgung mit elektrischer Energie zu 100% aus regenerativen Quellen erfolgen? Lutz, Josef 2012
154 Challenges regarding parallel-connection of SiC JFETs Peftitsis, Dimosthenis et al. 2011
155 Concept and prototyping of an active mains filter for aerospace application Liebig, Sebastian et al. 2011
156 Design and evaluation of state of the art rectifiers dedicated for a 46 kW E-ECS aerospace application with respect to power density and reliability Liebig, Sebastian et al. 2011
157 Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden Baburske, Roman 2011
158 Extraction of Power Cycles in Offshore Wind Power Applications Bohlländer, Marco et al. 2011
159 Filament-Induced Thermomigration of an Aluminium Drop at the Cathode-Side of High-Voltage Power Diodes Schulze, Hans-Joachim et al. 2011
160 Freigesetzte Radioaktivität aus der Reaktorkatastrophe von Fukushima im Pazifik und in der Nahrungskette Moldzio, Stephan et al. 2011
161 Freilaufdioden aus Silizium - Schaltverhalten, Robustheit Lutz, Josef et al. 2011
162 Hybrid Drive as a variation of a gear box Schön, Wolfgang et al. 2011
163 Liquid Cooling methods for power electronics in an automotive environment Baumann, Mathias et al. 2011
164 n-type doping of silicon by proton implantation Klug, Jan et al. 2011
165 On the Origin of Thermal Runaway in a Trench Power MOSFET Dibra, Donald et al. 2011
166 Optimization of Diodes Using the SPEED Concept and CIBH Pfaffenlehner, Manfred et al. 2011
167 Reliability Investigations of Improved Power Modules - Results from EfA-Project Hensler, Alexander et al. 2011
168 SEMICONDUCTOR DIODE RESISTIVE TO SURGE CURRENT WITH SOFT RECOVERY BEHAVIOR, AND METHOD OF MANUFACTURING THE SAME Baburske, Roman et al. 2011
169 Semiconductor Power Devices : Physics, Characteristics, Reliability Lutz, Josef et al. 2011
170 The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition Basler, Thomas et al. 2011
171 Thermal Impedance Monitoring during Power Cycling Tests Hensler, Alexander et al. 2011
172 Thermal Impedance Spectroscopy of Power Modules Hensler, Alexander et al. 2011
173 Thermal Impedance Spectroscopy of Power Modules During Power Cycling Hensler, Alexander et al. 2011
174 Verfahren zur Messung der Junction-Temperatur bei Leistungshalbleitern in einem Stromrichter Lutz, Josef et al. 2011
175 A new diode structure with inverse injection dependency of emitter efficiency (IDEE) Baburske, Roman et al. 2010
176 Analysis of the destruction mechanism during reverse recovery of power diodes Baburske, Roman et al. 2010
177 Comparison of the Mechanical Load in Solder Joints Using SiC and Si Chips Poller, Tilo et al. 2010
178 DT and Over Temperature Protection of Smart Power MOSFETs using Intergrated Seebeck Difference Temperature Sensors Donald, Dibra et al. 2010
179 Dynamic Avalanche in Bipolar Power Devices Lutz, Josef et al. 2010
180 Effects of Negative Differential Resistance in High Power Devices and some Relations to DMOS Structures Baburske, Roman et al. 2010
181 Elektrofahrzeuge Gesamttext : Bedeutung, Stand der Technik, Handlungsbedarf Böcker, Joachim et al. 2010
182 First Power Cycling Results of Improved Packaging Technologies for Hybrid Electrical Vehicle Applications Hensler, Alexander et al. 2010
183 Halbleiter-Leistungsbauelemente für die Traktionstechnik - aktuelle Entwicklungen Lutz, Josef et al. 2010
184 Halbleiterleistungsbauelemente – Wärmemanagement und Zuverlässigkeit Feller, Marco et al. 2010
185 Höchste Anforderungen an die Zuverlässigkeit Lutz, Josef 2010
186 Hybridfahrzeuge: Leistungsdichte weiter erhöhen Lutz, Josef 2010
187 IGBT Self-Turn-Off under Short-Circuit Condition Basler, Thomas et al. 2010
188 Insight into thermal management concepts for power electronics modules in automotive application Baumann, Mathias et al. 2010
189 Method and Test Assembly for Power Cycling Tests at Inverter Conditions Hensler, Alexander et al. 2010
190 Perspektiven fortschrittlicher und kritischer Wissenschaft und Kultur : Tagungsband 6. Offene Akademie 2010 Klug, Christoph et al. 2010
191 Power Cycling Tests at High Temperatures with IGBT Power Modules for Hybrid Electrical Vehicle Applications Hensler, Alexander et al. 2010
192 Power devices and modern micro- and nanotechnologies Stecher, Matthias et al. 2010
193 The Trade-Off between Surge-Current Capability and Reverse-Recovery Behaviour of High-Voltage Power Diodes Baburske, Roman et al. 2010
194 Thermal-mechanical analysis of solder layers in power modules under superimposed cycling conditions Poller, Tilo et al. 2010
195 VDE Studie Elektrofahrzeuge : Bedeutung, Stand der Technik, Handlungsbedarf Böcker, Joachim et al. 2010
196 100% erneuerbare Energien? – Eine Frage des Willens, nicht der Technik Lutz, Josef 2009
197 DC/DC-Wandler zur Einbindung von Doppelschichtkondensatoren in das Fahrzeugenergiebordnetz Polenov, Dieter (Dipl.-Ing.) 2009
198 Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung Lutz, Josef et al. 2009
199 IGBT-Modules: Design for reliability Lutz, Josef 2009
200 On the formation of stationary destructive cathode-sidefilaments in p+-n−-n+ diodes Baburske, Roman et al. 2009
201 Passive turn-on process of IGBTs in Matrix converter applications Baburske, Roman et al. 2009
202 Power Electronics for Power Cycling Capability at High Temperatures and High Temperature Swings Hensler, Alexander et al. 2009
203 Power Electronics in the Powertrain - An Optimum of Integration Vogel, Frank et al. 2009
204 Seebeck difference - temperature sensors integrated into smart power technologies Dibra, Donald et al. 2009
205 Short circuit III in high power IGBTs Lutz, Josef et al. 2009
206 Silizium- und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik Felsl, Hans Peter (Diplom-Physiker) 2009
207 The influence of turn-off dead time on the reverse-recovery behaviour of synchronous rectifiers in automotive DC/DC-converters Polenov, Dieter et al. 2009
208 The nn+-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes Lutz, Josef et al. 2009
209 Thermal-Mechanical Behaviour of Solder Layers in Power Modules Poller, Tilo et al. 2009
210 Analysis of a p+p-n-n+ diode structure Chen, Min et al. 2008
211 Charge-carrier Plasma Dynamics during the Reverse-recovery Period in p+-n--n+ diodes Baburske, Roman et al. 2008
212 Effects of Metallisation and Bondfeets in 3.3kV Free-Wheeling Diodes at Surge Current Conditions Heinze, Birk et al. 2008
213 Halbleiterbauelement mit verbesserter Robustheit Lutz, Josef et al. 2008
214 Investigation of Surge Current Capability of SiC MPS Diodes Neumeister, Matthias et al. 2008
215 Model for Power Cycling lifetime of IGBT Modules – various factors influencing lifetime Bayerer, Reinhold et al. 2008
216 Power cycling induced failure mechanisms in the viewpoint of rough temperature environment Lutz, Josef 2008
217 Power Cycling of IGBT- Modules with superimposed thermal cycles Feller, Marco et al. 2008
218 Ruggedness Analysis of 3.3kV High Voltage Diodes considering various Buffer Structures and Edge Terminations Heinze, Birk et al. 2008
219 Scaling of Temperature Sensors for Smart Power MOSFETs Dibra, Donald et al. 2008
220 Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes Heinze, Birk et al. 2008
221 The CIBH Diode : Great Improvement for Ruggedness and Softness of High Voltage Diodes Felsl, Hans Peter et al. 2008
222 The Influence of Field- and Diffusion-Current Components on the Charge-carrier Plasma Dynamics during Turn-off process of p+n-n+ Diodes Baburske, Roman et al. 2008
223 A diode structure with anode side buried p doped layers for damping of dynamic avalanche Chen, Min et al. 2007
224 A method to investigate the cycling lifetime of supercaps Keutel, Thomas et al. 2007
225 a-C:H/Si HETEROSTRUCTURE ELECTRICAL PROPERTIES DEGARDATION IN WATER MEDIUM UNDER ELECTRIC FIELD EFFECT Sinelnikov, Boris et al. 2007
226 Cascaded Boost-Buck DC/DC-Converter for Dual-Voltage Automotive Power-Nets with Overlapping Voltage Ranges Polenov, Dieter et al. 2007
227 Entwicklungstrends bei Halbleiter-Bauelementen für die Traktionstechnik Lutz, Josef 2007
228 Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes Polenov, Dieter et al. 2007
229 Influence of the base contact on the electrical characteristics of SiC BJTs Lee, Hyung-Seok et al. 2007
230 Leistungshalbleiterbauelement für Sperrspannungen über 2000V Lutz, Josef et al. 2007
231 Objections against the current limits for microwave radiation Lutz, Josef et al. 2007
232 Power Cycling Induced Failure Mechanisms in Solder Layers Herrmann, Tobias et al. 2007
233 Power Cycling of IGBT-Modules with different current waveforms Feller, Marco et al. 2007
234 Ruggedness of high voltage diodes under very hard Commutation Conditons Heinze, Birk et al. 2007
235 Synthese und Erforschung der physikalischen Eigenschaften eines a-C:H Filmes, abgeschieden aus dem Radiofrequenzplasma Sinelnikow, B.M et al. 2007
236 Thyristors and IGBTs with integrated self-protection functions Niedernostheide, Franz-Josef et al. 2007
237 Verfahren zur Passivierung einer schnellen Leistungsdiode durch eine Passivierungsschicht aus amorphem Kohlenstoff Lutz, Josef et al. 2007
238 Zur Zuverlässigkeit von Leistungsbauelementen bei 200°C Sperrschichttemperatur Veit, Björn et al. 2007
239 Desaturated Switching of Trench - Fieldstop IGBTs Bohlländer, Marco et al. 2006
240 Energiespeicher im Niederspannungsnetz zur Integration dezentraler, fluktuierender Energiequellen Bodach, Mirko (Dipl.-Ing.) 2006
241 Halbleiter-Leistungsbauelemente : Physik, Eigenschaften, Zuverlässigkeit Lutz, Josef 2006
242 Lastwechselfestigkeit von modernen Aufbau- und Verbindungstechniken bei hohen Temperaturhüben Amro, Raed (Dipl.-Ing.) 2006
243 Verfahren zur Herstellung einer vergrabenen n-dotierten Halbleiterzone in einem Halbleiterkörper und Halbleiterbauelement Siemieniec, Ralf et al. 2006
Abgefragt in der Universitätsbibliographie der TU-Chemnitz.