Semiconductor Physics

Head of the Group: Prof. Dr. Dr. h.c. Dietrich R.T. Zahn Deputy Head: apl. Prof. Dr. Georgeta Salvan Secretary Phone: +49 (0)371 531-33015 Fax: +49 (0)371 531-21739   Member of: Cluster of Excellence EXC 1075 "MERGE" - Interacting Research Domain D: Micro- and Nanosystems Integration Cluster of Excellence EXC 1056  "cfAED" - Research Area B: Carbon Path

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New Research Building MAIN (Materials, Architecture, and Infrastructures for Nanomembranes) at Chemnitz University of Technology The goverments of Germany and Saxony fund research in the field of nanomembranes with 43.6 M€ - building will commence in 2013.
In Cooperation with Researchers from the Ukraine Dr. Raul Rodriguez Develops a Characterisation Technique for Nanomaterials and Receives International Award
Women's power from eight countries united

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Inorganic / Organic Interfaces

In recent years enormous progress was made in the investigation of organic semiconconductors both experimentally and theoretically. The research interest in these materials is driven by the manifold applications such as organic light emitting devices (OLEDs), organic field effect transistors (OFETs), and organic photovoltaic cells (OPVCs). Experimental techniques such as photoemission spectroscopy which has been one major surface science technique in the field of inorganic semiconductor research for decades has also been successfully applied to study organic semiconductors and their interfaces for quite some time. Other experimental techniques such as Raman spectroscopy are less widely used for studying organic semiconductor interfaces. However, also this optical spectroscopy technique, which probes the vibrational modes and may thus also be called vibrational spectroscopy, can provide very valuable information about interface properties such as geometric structure, band bending, and interfacial chemistry. It is the intention of this review to illustrate that the combination of techniques, namely vibrational and electron spectroscopies, is extremely powerful in the field of organic interface characterisation and that it provides complementary information and an improved insight in organic interface formation.

 

Low Dimensional Structures

Modern epitaxial methods allow to fabricate semiconductor quantum dots which are of great interest from the point of view of fundamental physics and potential applications. The study of fundamental vibrational and electronic properties of III-V quantum dot ensembles are focused on the elaboration of approaches for probing elementary excitations of a single quantum dot.

Raman and IR spectroscopies are used as the primary methods to study vibrational and electronic properties of quantum dots. Through the analysis of the Raman and IR spectra we learn about the effects of confinement, strain distribution and nanostructuring on the acoustic and optical phonon modes, including confined, interface, and surface modes in the quantum dot structures.

Advanced Interconnects

In high performance ULSI circuits new integration architectures like dual damascene techniques have offered process simplification and low cost fabrication of high performance and reliable interconnects using copper. However, due to the property of Cu to diffuse into Si or ULK materials, fabrication of diffusion barriers like Ta/TaN are important to achieve better interconnects. Moreover, with reduced dimension of the ULSI circuits the whole interconnect dimensions is also going down and hence it becomes very important to monitor the changes in the physical properties of the materials with thickness. Spectroscopic ellipsometry being a non-destructive and non-invasive optical technique can be used efficiently in determining thickness, optical constants, composition and phase of a material. Furthermore, electrical properties of the material like resistivity, plasma energy and mean relaxation time of conduction electrons can also be evaluated as a function of thickness from analyzing the ellipsometry data.