Professur für Opto- und Festkörperelektronik






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Dipl.-Ing. Ebrahim Nadimi

 
Contact Address
Technische Universität Chemnitz
A.-F.-Weinhold-Bau, Zimmer 527C
Reichenhainer Straße 70
D-09126 Chemnitz 		Telefon: +49 (0)371-531 35857
Telefax: +49 (0)371-531 24419
E-Mail:  ebn@hrz.tu-chemnitz.de
 
Research Interests
  • quantum mechanical transport in Semiconductor specially in MOS gate oxide structures
  • atomic and electronic structure of semiconductor/insulator
  • atomic level transport models
 
Research Methods
  • Shrödinger Poisson solver
  • Non Equilibrium Green's Function (NEGF)
  • ab initio electronic structure methods
 
Publications
Simulation of the direct tunneling current in Metal- Oxide- Semiconductor capacitor with half- opened boundaries, E. Nadimi, E.P. Nakhmedov , C. Radehaus, J. Appl. Phys. 99, 104501 (2006).

First- Principles calculations of the band gap of Hf(x)Si(1-x)O(2) and Zr(x)Si(1-x)O(2) alloys, E.P. Nakhmedov , E. Nadimi, M. Bouhassoune, and C. Radehaus, submitted

Tunneling effective mass of electrons in lightly N-doped SiO(x)N(y) gate insulators, E.Nadimi, C. Golz, M. Trentzsch, L. Herrman, K. Wieczorek, and C. Radehaus, in prepration